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  • BD243C

BD243C

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Manufacturer No:

BD243C

Manufacturer:

ON Semiconductor

HK JDW NO:

598-BD243C

Package:

TO-220-3

Datasheet:

BD243C

Description:

BD243C datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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BD243C BJT Description


The 6 A, 100 V PNP Bipolar Power Transistor BD243C is designed for use in general-purpose amplifier and switching applications. The device is manufactured in Planar technology with a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. BD244B and BD244C (PNP) are complementary to this part and they're all available in the TO-220 package.



BD243C BJT Features


  • Collector-Emitter Voltage: 100 V

  • Collector-Base Voltage: 100 V

  • Emitter-Base Voltage: 5 V

  • 6 A Continuous Collector Current

  • 65 W at 25°C Case Temperature

  • High Current Gain Bandwidth: fT = 3.0 MHz (Min) @ IC = 500 mAdc

  • Compact TO-220 AB Package

  • Pb-Free Packages are Available



BD243C BJT Applications


  • Medium Power Linear and Switching Applications

  • Driving or Switching Loads under 6A

  • High Power Audio Amplifier Circuits

  • BMS Applications

  • Motor Drivers

  • Battery Chargers

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

BD243C

technical specifications, attributes, parameters and parts with similar specifications to BD243C.

  • Type
    Parameter
    Select All
  • DC Current Gain (hFE) (Min) @ Ic, Vce

    15 @ 3A 4V

  • Current - Collector Cutoff (Max)

    700μA

  • Vce Saturation (Max) @ Ib, Ic

    1.5V @ 1A, 6A

  • Collector Emitter Breakdown Voltage

    100V

  • Voltage - Collector Emitter Breakdown (Max)

    100V

  • Current - Collector (Ic) (Max)

    6A

  • Collector Emitter Saturation Voltage

    1.5V

  • Collector Base Voltage (VCBO)

    100V

  • Emitter Base Voltage (VEBO)

    5V

  • hFE Min

    15

  • Height

    15.95mm

  • Length

    10mm

  • Width

    4.5mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    RoHS Compliant

  • Lead Free

    Lead Free

  • Contact Plating

    Tin

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3

  • Number of Pins

    3

  • Supplier Device Package

    TO-220-3

  • Weight

    1.8g

  • Operating Temperature

    150°C TJ

  • Packaging

    Bulk

  • Published

    2007

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Max Operating Temperature

    150°C

  • Min Operating Temperature

    -65°C

  • Voltage - Rated DC

    100V

  • Max Power Dissipation

    65W

  • Current Rating

    6A

  • Base Part Number

    BD243

  • Number of Elements

    1

  • Polarity

    NPN

  • Element Configuration

    Single

  • Power Dissipation

    65W

  • Power - Max

    65W

  • Gain Bandwidth Product

    3MHz

  • Transistor Type

    NPN

  • Collector Emitter Voltage (VCEO)

    100V

  • Max Collector Current

    6A

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