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FCX605TA
FCX605TA
233-FCX605TA
TO-243AA
FCX605TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
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FCX605TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 2000 @ 1A 5V.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 1mA, 1A.Continuous collector voltages of 1A should be maintained to achieve high efficiency.The emitter base voltage can be kept at 10V for high efficiency.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.150MHz is present in the transition frequency.Breakdown input voltage is 120V volts.During maximum operation, collector current can be as low as 1A volts.
FCX605TA Features
the DC current gain for this device is 2000 @ 1A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 1A
a transition frequency of 150MHz
FCX605TA Applications
There are a lot of Diodes Incorporated FCX605TA applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
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FCX605TA
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