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  • FGA50S110P

FGA50S110P

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Manufacturer No:

FGA50S110P

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FGA50S110P

Package:

TO-3P-3, SC-65-3

Datasheet:

FGA50S110P

Description:

FGA50S110P datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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FGA50S110P                              Description

 

Using advanced field stop trench and shorted-anode technol- ogy.Fairchild's shorted-anode trench IGBTs offer superior con- duction and switching performances for switching applications. This device is tailored to induction cooker and microwave oven.

 

FGA50S110P                                            Features 


Intrinsic Anti-parallel Diode for Soft-switching Applications High Switching Frequency Range 10 kHz to 50kHz High Temperature Stable Behavior(Tjmax=175℃)

*Low Saturation VoltageDrop:VCE(sat)=2.06V@lc=50A Robust Pot Detection Noise Immunity RoHS Compliant(Pb-free lead plating)

 

FGA50S110P                                          Applications  


Induction Cooker 

Rice-jar and Microwave Oven

 Soft-switching Applications


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EmailEmail for receiving inquiries: jindawei@hkjdwchip.com

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Payment Method

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The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
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UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
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From $40.00 basic shipping fee depend on zone and country.
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From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FGA50S110P

technical specifications, attributes, parameters and parts with similar specifications to FGA50S110P.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    15 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 4 days ago)

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-3P-3, SC-65-3

  • Number of Pins

    3

  • Weight

    6.401g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tube

  • Published

    2013

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin (Sn)

  • HTS Code

    8541.29.00.95

  • Subcategory

    Insulated Gate BIP Transistors

  • Max Power Dissipation

    300W

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    300W

  • Input Type

    Standard

  • Transistor Application

    POWER CONTROL

  • Polarity/Channel Type

    N-CHANNEL

  • Collector Emitter Voltage (VCEO)

    1.1kV

  • Max Collector Current

    50A

  • Collector Emitter Breakdown Voltage

    1.1kV

  • Voltage - Collector Emitter Breakdown (Max)

    1100V

  • Collector Emitter Saturation Voltage

    2.7V

  • Turn On Time

    370 ns

  • Vce(on) (Max) @ Vge, Ic

    2.6V @ 15V, 50A

  • Turn Off Time-Nom (toff)

    492 ns

  • IGBT Type

    Trench Field Stop

  • Gate Charge

    195nC

  • Current - Collector Pulsed (Icm)

    120A

  • Gate-Emitter Voltage-Max

    25V

  • Gate-Emitter Thr Voltage-Max

    7.5V

  • Height

    20.1mm

  • Length

    15.8mm

  • Width

    5mm

  • Radiation Hardening

    No

  • RoHS Status

    ROHS3 Compliant

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