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FJN3303FTA
FJN3303FTA
598-FJN3303FTA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
FJN3303FTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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FJN3303FTA Overview
DC current gain in this device equals 14 @ 500mA 2V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 500mA, 1.5A.The base voltage of the emitter can be kept at 9V to achieve high efficiency.The part has a transition frequency of 4MHz.An input voltage of 400V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 1.5A volts.
FJN3303FTA Features
the DC current gain for this device is 14 @ 500mA 2V
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
FJN3303FTA Applications
There are a lot of ON Semiconductor FJN3303FTA applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
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FJN3303FTA
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