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FMMT558TA
FMMT558TA
233-FMMT558TA
TO-236-3, SC-59, SOT-23-3
FMMT558TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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FMMT558TA Overview
This device has a DC current gain of 100 @ 50mA 10V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 6mA, 50mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -150mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -150mA for this device.In this part, there is a transition frequency of 50MHz.Single BJT transistor can be broken down at a voltage of 400V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
FMMT558TA Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 50MHz
FMMT558TA Applications
There are a lot of Diodes Incorporated FMMT558TA applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
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FMMT558TA
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