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  • IRF7750

IRF7750

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Manufacturer No:

IRF7750

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRF7750

Package:

8-TSSOP (0.173, 4.40mm Width)

Datasheet:

-

Description:

IRF7750 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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IRF7750          Description


International Rectifier's HEXFET* power MOSFET uses advanced technology to achieve extremely low on-resistance per silicon area, which is combined with the well-known rugged device design of International Rectifier. Provide designers with extremely efficient and reliable battery and load management equipment.

Compared with the standard SO-8, the footing area of the TSSOP-8 package is reduced by 45%, which makes the TSSOP-8 an ideal device for applications where space is scarce on the printed circuit board. Ultra-thin (< 1.1 mm) enables it to easily adapt to extremely thin environments, such as portable electronics and PCMCIA cards.



IRF7750       Features


Ultra Low On-Resistance

Dual P-Channel MOSFET

Very Small SOIC Package

Low Profile ( < 1.1mm)

Available in Tape & Reel

 

IRF7750       Applications


 portable electronics

 PCMCIA cards

 


 


 


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Tell us the model and quantity you need, our sales staff will reply the price in time.
EmailEmail for receiving inquiries: jindawei@hkjdwchip.com

2. Means of Payment

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3. RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

4. Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

Purchasing and Inquiry

Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRF7750

technical specifications, attributes, parameters and parts with similar specifications to IRF7750.

  • Type
    Parameter
    Select All
  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-TSSOP (0.173, 4.40mm Width)

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Published

    2007

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    8

  • ECCN Code

    EAR99

  • Terminal Finish

    MATTE TIN

  • Additional Feature

    HIGH RELIABILITY

  • HTS Code

    8541.29.00.95

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    -20V

  • Max Power Dissipation

    1W

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Current Rating

    -4.7A

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Base Part Number

    IRF7750

  • JESD-30 Code

    R-PDSO-G8

  • Qualification Status

    Not Qualified

  • Number of Elements

    2

  • Configuration

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • Operating Mode

    ENHANCEMENT MODE

  • FET Type

    2 P-Channel (Dual)

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    30m Ω @ 4.7A, 4.5V

  • Vgs(th) (Max) @ Id

    1.2V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1700pF @ 15V

  • Gate Charge (Qg) (Max) @ Vgs

    39nC @ 5V

  • Drain to Source Voltage (Vdss)

    20V

  • Continuous Drain Current (ID)

    4.7A

  • JEDEC-95 Code

    MO-153AA

  • Drain-source On Resistance-Max

    0.03Ohm

  • Drain to Source Breakdown Voltage

    -20V

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • FET Feature

    Logic Level Gate

  • RoHS Status

    Non-RoHS Compliant

  • Lead Free

    Contains Lead

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