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IRF820PBF

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Manufacturer No:

IRF820PBF

Manufacturer:

Vishay Siliconix

HK JDW NO:

880-IRF820PBF

Package:

TO-220-3

Datasheet:

IRF820PBF

Description:

IRF820PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at HK JDW

Quantity:

In Stock : 999

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IRF820PBF Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 360pF @ 25V.This device conducts a continuous drain current (ID) of 2.5A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).Its turn-off delay time is 33 ns, which is the time to charge the device's input capacitance before drain current conduction begins.MOSFETs have 3Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To operate this transistor, you will need a 500V drain to source voltage (Vdss).Using drive voltage (10V) reduces this device's overall power consumption.

IRF820PBF Features


a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 33 ns
single MOSFETs transistor is 3Ohm
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)

IRF820PBF Applications


There are a lot of Vishay Siliconix IRF820PBF applications of single MOSFETs transistors.

  • Solar Inverter
  • PFC stages, hard switching PWM stages and resonant switching
  • LCD/LED TV
  • Telecom 1 Sever Power Supplies
  • Synchronous Rectification
  • Power Management Functions
  • Lighting
  • Motor Drives and Uninterruptible Power Supples
  • AC-DC Power Supply
  • DC-to-DC converters
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRF820PBF

technical specifications, attributes, parameters and parts with similar specifications to IRF820PBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    8 Weeks

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3

  • Number of Pins

    3

  • Supplier Device Package

    TO-220AB

  • Weight

    6.000006g

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Published

    1997

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Resistance

    3Ohm

  • Max Operating Temperature

    150°C

  • Min Operating Temperature

    -55°C

  • Voltage - Rated DC

    500V

  • Technology

    MOSFET (Metal Oxide)

  • Current Rating

    2.5A

  • Number of Elements

    1

  • Number of Channels

    1

  • Power Dissipation-Max

    50W Tc

  • Element Configuration

    Single

  • Power Dissipation

    50W

  • Turn On Delay Time

    8 ns

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    3Ohm @ 1.5A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    360pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    2.5A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    24nC @ 10V

  • Rise Time

    8.6ns

  • Drain to Source Voltage (Vdss)

    500V

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    16 ns

  • Turn-Off Delay Time

    33 ns

  • Continuous Drain Current (ID)

    2.5A

  • Threshold Voltage

    4V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    500V

  • Input Capacitance

    360pF

  • Recovery Time

    520 ns

  • Drain to Source Resistance

    3Ohm

  • Rds On Max

    3 Ω

  • Nominal Vgs

    4 V

  • Height

    9.01mm

  • Length

    10.41mm

  • Width

    4.7mm

  • REACH SVHC

    Unknown

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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