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KSC2335RTU
KSC2335RTU
598-KSC2335RTU
TO-220-3
KSC2335RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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KSC2335RTU Overview
In this device, the DC current gain is 20 @ 1A 5V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.When VCE saturation is 1V @ 600mA, 3A, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 7A.Product comes in TO-220-3 supplier package.Device displays Collector Emitter Breakdown (400V maximal voltage).When collector current reaches its maximum, it can reach 7A volts.
KSC2335RTU Features
the DC current gain for this device is 20 @ 1A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 7A
the supplier device package of TO-220-3
KSC2335RTU Applications
There are a lot of ON Semiconductor KSC2335RTU applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
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KSC2335RTU
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