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KSC3503DSTU
KSC3503DSTU
598-KSC3503DSTU
TO-225AA, TO-126-3
KSC3503DSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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KSC3503DSTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 10mA 10V.A collector emitter saturation voltage of 600mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 2mA, 20mA.An emitter's base voltage can be kept at 5V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 300V volts.When collector current reaches its maximum, it can reach 100mA volts.
KSC3503DSTU Features
the DC current gain for this device is 40 @ 10mA 10V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 150MHz
KSC3503DSTU Applications
There are a lot of ON Semiconductor KSC3503DSTU applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
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KSC3503DSTU
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