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KST3906MTF
KST3906MTF
598-KST3906MTF
TO-236-3, SC-59, SOT-23-3
KST3906MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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KST3906MTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of -400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.250MHz is present in the transition frequency.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 200mA volts is possible.
KST3906MTF Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
KST3906MTF Applications
There are a lot of ON Semiconductor KST3906MTF applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
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KST3906MTF
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