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MJD41CTF

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Manufacturer No:

MJD41CTF

Manufacturer:

ON Semiconductor

HK JDW NO:

598-MJD41CTF

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Datasheet:

MJD41CTF

Description:

MJD41CTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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MJD41CTF Overview


In this device, the DC current gain is 15 @ 3A 4V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.A transition frequency of 3MHz is present in the part.This device can take an input voltage of 100V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.

MJD41CTF Features


the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz

MJD41CTF Applications


There are a lot of ON Semiconductor MJD41CTF applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

MJD41CTF

technical specifications, attributes, parameters and parts with similar specifications to MJD41CTF.

  • Type
    Parameter
    Select All
  • Pbfree Code

    yes

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin (Sn)

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    100V

  • Max Power Dissipation

    1.75W

  • Terminal Form

    GULL WING

  • Current Rating

    6A

  • Frequency

    3MHz

  • Base Part Number

    MJD41

  • JESD-30 Code

    R-PSSO-G2

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    1.75W

  • Transistor Application

    AMPLIFIER

  • Gain Bandwidth Product

    3MHz

  • Polarity/Channel Type

    NPN

  • Transistor Type

    NPN

  • Collector Emitter Voltage (VCEO)

    100V

  • Max Collector Current

    6A

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    15 @ 3A 4V

  • Current - Collector Cutoff (Max)

    10μA

  • Vce Saturation (Max) @ Ib, Ic

    1.5V @ 600mA, 6A

  • Collector Emitter Breakdown Voltage

    100V

  • Transition Frequency

    3MHz

  • Collector Emitter Saturation Voltage

    1.5V

  • Max Breakdown Voltage

    100V

  • Collector Base Voltage (VCBO)

    100V

  • Emitter Base Voltage (VEBO)

    5V

  • hFE Min

    15

  • Height

    2.3mm

  • Length

    6.6mm

  • Width

    6.1mm

  • Radiation Hardening

    No

  • RoHS Status

    RoHS Compliant

  • Lead Free

    Lead Free

  • Factory Lead Time

    15 Weeks

  • Lifecycle Status

    LAST SHIPMENTS (Last Updated: 1 week ago)

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-252-3, DPak (2 Leads + Tab), SC-63

  • Number of Pins

    3

  • Weight

    260.37mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2001

  • JESD-609 Code

    e3

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