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MMBT2484LT3G
MMBT2484LT3G
598-MMBT2484LT3G
TO-236-3, SC-59, SOT-23-3
MMBT2484LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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MMBT2484LT3G Overview
DC current gain in this device equals 250 @ 1mA 5V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 350mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 6V to gain high efficiency.Maximum collector currents can be below 100mA volts.
MMBT2484LT3G Features
the DC current gain for this device is 250 @ 1mA 5V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 100μA, 1mA
the emitter base voltage is kept at 6V
MMBT2484LT3G Applications
There are a lot of ON Semiconductor MMBT2484LT3G applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
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MMBT2484LT3G
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