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MPSA13RLRPG
MPSA13RLRPG
598-MPSA13RLRPG
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
MPSA13RLRPG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
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MPSA13RLRPG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10000 @ 100mA 5V.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 500mA is necessary for high efficiency.Keeping the emitter base voltage at 10V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.There is a transition frequency of 125MHz in the part.There is a breakdown input voltage of 30V volts that it can take.A maximum collector current of 500mA volts is possible.
MPSA13RLRPG Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
MPSA13RLRPG Applications
There are a lot of ON Semiconductor MPSA13RLRPG applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
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MPSA13RLRPG
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