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MPSW63RLRA
MPSW63RLRA
598-MPSW63RLRA
TO-226-3, TO-92-3 Long Body (Formed Leads)
MPSW63RLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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MPSW63RLRA Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).Maintaining the continuous collector voltage at -500mA is essential for high efficiency.The base voltage of the emitter can be kept at 10V to achieve high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.125MHz is present in the transition frequency.In extreme cases, the collector current can be as low as 500mA volts.
MPSW63RLRA Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MPSW63RLRA Applications
There are a lot of ON Semiconductor MPSW63RLRA applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
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MPSW63RLRA
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