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PN3646
PN3646
598-PN3646
TO-226-3, TO-92-3 (TO-226AA)
PN3646 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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PN3646 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 30mA 400mV.A VCE saturation (Max) of 500mV @ 3mA, 300mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 30mA for this device.Product comes in TO-92-3 supplier package.Detection of Collector Emitter Breakdown at 15V maximal voltage is present.A maximum collector current of 300mA volts is possible.
PN3646 Features
the DC current gain for this device is 30 @ 30mA 400mV
the vce saturation(Max) is 500mV @ 3mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 30mA
the supplier device package of TO-92-3
PN3646 Applications
There are a lot of ON Semiconductor PN3646 applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
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PN3646
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