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  • PSMN130-200D,118

PSMN130-200D,118

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Manufacturer No:

PSMN130-200D,118

Manufacturer:

Nexperia USA Inc.

HK JDW NO:

554-PSMN130-200D,118

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Datasheet:

PSMN130-200D,118

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 130m Ω @ 25A, 10V ±20V 2470pF @ 25V 65nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

In Stock : 999

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Product Details

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PSMN130-200D,118 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 252 mJ.An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2470pF @ 25V is its maximum input capacitance.This device has a continuous drain current (ID) of [20A], which is its maximum continuous current.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 50 ns.Pulsed drain current is maximum rated peak drain current 80A.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Powered by 200V, it supports maximum dual supply voltages.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.Using drive voltage (10V) reduces this device's overall power consumption.

PSMN130-200D,118 Features


the avalanche energy rating (Eas) is 252 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 80A.
a threshold voltage of 3V

PSMN130-200D,118 Applications


There are a lot of Nexperia USA Inc. PSMN130-200D,118 applications of single MOSFETs transistors.

  • PFC stages, hard switching PWM stages and resonant switching
  • General Purpose Interfacing Switch
  • Server power supplies
  • Motor drives and Uninterruptible Power Supplies
  • Uninterruptible Power Supply
  • Industrial Power Supplies
  • LCD/LED/ PDP TV Lighting
  • Motor Drives and Uninterruptible Power Supples
  • Micro Solar Inverter
  • Power Management Functions
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

PSMN130-200D,118

technical specifications, attributes, parameters and parts with similar specifications to PSMN130-200D,118.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-252-3, DPak (2 Leads + Tab), SC-63

  • Surface Mount

    YES

  • Number of Pins

    3

  • Weight

    453.59237mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2010

  • Series

    TrenchMOS™

  • JESD-609 Code

    e3

  • Part Status

    Last Time Buy

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Resistance

    130MOhm

  • Terminal Finish

    Tin (Sn)

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Form

    GULL WING

  • Pin Count

    3

  • JESD-30 Code

    R-PSSO-G2

  • Number of Elements

    1

  • Power Dissipation-Max

    150W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    150W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    15 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    130m Ω @ 25A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 1mA

  • Input Capacitance (Ciss) (Max) @ Vds

    2470pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    20A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    65nC @ 10V

  • Rise Time

    46ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    38 ns

  • Turn-Off Delay Time

    50 ns

  • Continuous Drain Current (ID)

    20A

  • Threshold Voltage

    3V

  • Gate to Source Voltage (Vgs)

    20V

  • Max Dual Supply Voltage

    200V

  • Drain to Source Breakdown Voltage

    200V

  • Pulsed Drain Current-Max (IDM)

    80A

  • Avalanche Energy Rating (Eas)

    252 mJ

  • Height

    2.38mm

  • Length

    6.35mm

  • Width

    6.22mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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