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Home Home Discrete Semiconductors Single MOSFETs Transistors SQ3419AEEV-T1_GE3
SQ3419AEEV-T1_GE3
  • SQ3419AEEV-T1_GE3
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SQ3419AEEV-T1_GE3

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Manufacturer No:

SQ3419AEEV-T1_GE3

Manufacturer:

Vishay Siliconix

HK JDW NO:

880-SQ3419AEEV-T1_GE3

Package:

SOT-23-6 Thin, TSOT-23-6

Datasheet:

SQ3419AEEV-T1_GE3

Description:

MOSFET P-Channel Automotive 40V 6.9A 6-Pin TSOP-6 T/R

Quantity:

Add to RFQ list

In Stock : 999

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The following are some common countries' logistic time.

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UPS(www.ups.com)
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FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

SQ3419AEEV-T1_GE3

technical specifications, attributes, parameters and parts with similar specifications to SQ3419AEEV-T1_GE3.

  • Type
    Parameter
    Select All

  • Number of Elements

    1

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • Number of Channels

    1

  • Power Dissipation-Max

    5W Tc

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    5W

  • Turn On Delay Time

    9 ns

  • FET Type

    P-Channel

  • Rds On (Max) @ Id, Vgs

    61m Ω @ 2.5A, 10V

  • Vgs(th) (Max) @ Id

    2.5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    975pF @ 20V

  • Current - Continuous Drain (Id) @ 25°C

    6.9A Tc

  • Factory Lead Time

    12 Weeks

  • Gate Charge (Qg) (Max) @ Vgs

    12.5nC @ 4.5V

  • Mounting Type

    Surface Mount

  • Drain to Source Voltage (Vdss)

    40V

  • Package / Case

    SOT-23-6 Thin, TSOT-23-6

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Surface Mount

    YES

  • Vgs (Max)

    ±12V

  • Transistor Element Material

    SILICON

  • Turn-Off Delay Time

    26 ns

  • Operating Temperature

    -55°C~175°C TJ

  • Continuous Drain Current (ID)

    -6.9A

  • Gate to Source Voltage (Vgs)

    12V

  • Packaging

    Tape & Reel (TR)

  • Drain to Source Breakdown Voltage

    -40V

  • Max Junction Temperature (Tj)

    175°C

  • Series

    Automotive, AEC-Q101, TrenchFET®

  • Part Status

    Active

  • Height

    1.1mm

  • RoHS Status

    Non-RoHS Compliant

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    6

  • ECCN Code

    EAR99

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Reach Compliance Code

    unknown

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • JESD-30 Code

    R-PDSO-G6

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United Kingdom/GBP Summary
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