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Home Home Discrete Semiconductors Single MOSFETs Transistors STB18NM80
STB18NM80
  • STB18NM80
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STB18NM80

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Manufacturer No:

STB18NM80

Manufacturer:

STMicroelectronics

HK JDW NO:

761-STB18NM80

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Datasheet:

STB18NM80

Description:

STB18NM80 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at HK JDW

Quantity:

Add to RFQ list

In Stock : 999

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From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
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From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

STB18NM80

technical specifications, attributes, parameters and parts with similar specifications to STB18NM80.

  • Type
    Parameter
    Select All

  • Factory Lead Time

    26 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    150°C TJ

  • Packaging

    Cut Tape (CT)

  • Series

    MDmesh™

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Resistance

    295mOhm

  • Terminal Finish

    Matte Tin (Sn) - annealed

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    245

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Base Part Number

    STB18N

  • Pin Count

    4

  • JESD-30 Code

    R-PSSO-G2

  • Number of Elements

    1

  • Power Dissipation-Max

    190W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    190W

  • Turn On Delay Time

    18 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    295m Ω @ 8.5A, 10V

  • Vgs(th) (Max) @ Id

    5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    2070pF @ 50V

  • Current - Continuous Drain (Id) @ 25°C

    17A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    70nC @ 10V

  • Rise Time

    28ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±25V

  • Fall Time (Typ)

    50 ns

  • Turn-Off Delay Time

    96 ns

  • Continuous Drain Current (ID)

    17A

  • Threshold Voltage

    4V

  • Gate to Source Voltage (Vgs)

    30V

  • Drain to Source Breakdown Voltage

    800V

  • Pulsed Drain Current-Max (IDM)

    68A

  • Avalanche Energy Rating (Eas)

    600 mJ

  • Height

    4.6mm

  • Length

    10.75mm

  • Width

    10.4mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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