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  • STF13N65M2

STF13N65M2

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Manufacturer No:

STF13N65M2

Manufacturer:

STMicroelectronics

HK JDW NO:

761-STF13N65M2

Package:

TO-220-3 Full Pack

Datasheet:

STF13N65M2

Description:

STF13N65M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at HK JDW

Quantity:

In Stock : 999

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STF13N65M2 Description


The N-channel Power MOSFETs used in these products were created utilizing the MDmeshTM M2 technology. The devices have low on-resistance and optimal switching characteristics because of their strip layout and improved vertical structure, making them suited for the most demanding high efficiency converters.



STF13N65M2 Features


  • Extremely low gate charge

  • Excellent output capacitance (Coss) profile

  • 100% avalanche tested

  • Zener-protected



STF13N65M2 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

STF13N65M2

technical specifications, attributes, parameters and parts with similar specifications to STF13N65M2.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    16 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 8 months ago)

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3 Full Pack

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    150°C TJ

  • Packaging

    Tube

  • Series

    MDmesh™ M2

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • Base Part Number

    STF13

  • Number of Elements

    1

  • Power Dissipation-Max

    25W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    ISOLATED

  • Turn On Delay Time

    11 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    430m Ω @ 5A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    590pF @ 100V

  • Current - Continuous Drain (Id) @ 25°C

    10A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    17nC @ 10V

  • Drain to Source Voltage (Vdss)

    650V

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±25V

  • Turn-Off Delay Time

    38 ns

  • Continuous Drain Current (ID)

    10A

  • JEDEC-95 Code

    TO-220AB

  • Gate to Source Voltage (Vgs)

    25V

  • Pulsed Drain Current-Max (IDM)

    40A

  • DS Breakdown Voltage-Min

    650V

  • Height

    16.4mm

  • Length

    10.4mm

  • Width

    4.6mm

  • RoHS Status

    ROHS3 Compliant

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