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TTA1943(Q)
TTA1943(Q)
4669-TTA1943(Q)
TO-3PL
TTA1943(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at HK JDW
In Stock : 999
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TTA1943(Q) Overview
This device has a DC current gain of 80 @ 1A 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -3V, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 800mA, 8A.With the emitter base voltage set at -5V, an efficient operation can be achieved.Collector current can be as low as 15A volts at its maximum.
TTA1943(Q) Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of -3V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
TTA1943(Q) Applications
There are a lot of Toshiba Semiconductor and Storage TTA1943(Q) applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
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TTA1943(Q)
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