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ZXTN26020DMFTA
ZXTN26020DMFTA
233-ZXTN26020DMFTA
3-XDFN
ZXTN26020DMFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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ZXTN26020DMFTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 290 @ 500mA 2V DC current gain.With a collector emitter saturation voltage of 290mV, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 290mV @ 40mA, 2A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 260MHz in the part.In extreme cases, the collector current can be as low as 1.5A volts.
ZXTN26020DMFTA Features
the DC current gain for this device is 290 @ 500mA 2V
a collector emitter saturation voltage of 290mV
the vce saturation(Max) is 290mV @ 40mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 260MHz
ZXTN26020DMFTA Applications
There are a lot of Diodes Incorporated ZXTN26020DMFTA applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
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ZXTN26020DMFTA
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