Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | Current | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Max Dual Supply Voltage | Clamping Voltage | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Drain to Source Voltage (Vdss) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
APT50GT120B2RDQ2G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 29 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | No | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e3/e1 | PURE MATTE TIN/TIN SILVER COPPER | 3 | R-PSFM-T3 | 625W | 625W | 1 | COLLECTOR | N-CHANNEL | Single | 94A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 77 ns | 3.7V @ 15V, 50A | 303 ns | NPT | 1200V | 800V, 50A, 4.7 Ω, 15V | 340nC | 150A | 24ns/230ns | 2330μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
 |
GPA060A060MN-FD | Global Power | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | 2014 | Active | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AUIRG4PH50S-205 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | Obsolete | 1 (Unlimited) | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 200W | 1.7V @ 15V, 33A | 1200V | 57A | 960V, 33A, 5 Ω, 15V | 251nC | 114A | 32ns/845ns | 1.8mJ (on), 19.6mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
75099 | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
NGTD28T65F2SWK | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | Tape & Reel (TR) | 2016 | yes | Active | ROHS3 Compliant | Die | Surface Mount | -55°C~175°C TJ | Standard | 2V @ 15V, 75A | Trench Field Stop | 650V | 200A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
NGTB40N120FLWG | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 260W | TO-247 | 200ns | 2.2V @ 15V, 40A | Trench Field Stop | 1.2V | 80A | 600V, 40A, 10Ohm, 15V | 415nC | 160A | 130ns/385ns | 2.6mJ (on), 1.6mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
HGT1S10N120BNS | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 44 Weeks | ACTIVE, NOT REC (Last Updated: 1 day ago) | Surface Mount, Through Hole | Tube | yes | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 35A | No | 3 | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | Surface Mount | 1.31247g | -55°C~150°C TJ | 1.2kV | Standard | 35A | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | 260 | 30 | HGT1S10N120 | R-PSSO-G2 | 312W | 1.2kV | 1 | COLLECTOR | N-CHANNEL | Single | 298W | 1.2kV | 35A | 1.2kV | 1.2kV | MOTOR CONTROL | SILICON | 2.7V | 32 ns | 2.7V @ 15V, 10A | 330 ns | NPT | 1200V | 55A | 960V, 10A, 10 Ω, 15V | 100nC | 80A | 23ns/165ns | 320μJ (on), 800μJ (off) | |||||||||||||||||||||||||||||
|
NGTB50N60FL2WG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | LAST SHIPMENTS (Last Updated: 4 days ago) | Through Hole | Tube | 2014 | yes | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | e3 | Tin (Sn) | Insulated Gate BIP Transistors | 417W | 417W | N-CHANNEL | Single | 94 ns | 100A | 600V | 2V | 2V @ 15V, 50A | Trench Field Stop | 20V | 6.5V | 400V, 50A, 10 Ω, 15V | 220nC | 200A | 100ns/237ns | 1.5mJ (on), 460μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RGW80TK65GVC11 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-3PFM, SC-93-3 | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 81W | 1 | SINGLE | ISOLATED | N-CHANNEL | POWER CONTROL | SILICON | 59 ns | 1.9V @ 15V, 40A | 232 ns | Trench Field Stop | 650V | 39A | 400V, 40A, 10 Ω, 15V | 110nC | 160A | 44ns/143ns | 760μJ (on), 720μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SGW10N60AFKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2009 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | LOW CONDUCTION LOSS | TO-247-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | 92W | 92W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Single | 20A | 600V | 600V | MOTOR CONTROL | SILICON | 40 ns | 2.4V @ 15V, 10A | 224 ns | NPT | 400V, 10A, 25 Ω, 15V | 52nC | 40A | 28ns/178ns | 320μJ | |||||||||||||||||||||||||||||||||||||||||||||
|
NGTD14T65F2SWK | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | ACTIVE (Last Updated: 1 week ago) | Tape & Reel (TR) | 2016 | yes | Active | ROHS3 Compliant | Lead Free | Die | Surface Mount | -55°C~175°C TJ | Standard | 2V @ 15V, 35A | Trench Field Stop | 650V | 120A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
NGTB50N65FL2WG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | ACTIVE (Last Updated: 1 day ago) | Through Hole | Tube | 2015 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Insulated Gate BIP Transistors | 417W | 417W | N-CHANNEL | Single | 94 ns | 100A | 650V | 2V | 2V @ 15V, 50A | Trench Field Stop | 20V | 6.5V | 400V, 50A, 10 Ω, 15V | 220nC | 200A | 100ns/237ns | 1.5mJ (on), 460μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
FGB3236-F085 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 9 Weeks | ACTIVE (Last Updated: 1 week ago) | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, EcoSPARK® | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 1.31247g | -40°C~175°C TJ | Logic | e3 | Tin (Sn) | GULL WING | FGB3236 | R-PSSO-G2 | Insulated Gate BIP Transistors | 187W | 187W | 1 | COLLECTOR | N-CHANNEL | Single | 360V | 360V | 44A | 360V | 1.32V | 7000ns | AUTOMOTIVE IGNITION | SILICON | 2350 ns | 1.4V @ 4V, 6A | 7040 ns | 12V | 2.2V | 15000ns | 300V, 1k Ω, 5V | 20nC | -/5.4μs | |||||||||||||||||||||||||||||||||||||||
 |
GN2470K4-G | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | Active | 3 (168 Hours) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.1mm | Surface Mount | -55°C~150°C TJ | Standard | GULL WING | 260 | R-PSSO-G2 | 2.5W | TO-252AA | Single | 2.5W | 1A | 700V | 700V | 5V @ 13V, 3A | 1A | 3.5A | 8ns/20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXYR50N120C3D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2016 | GenX3™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | TO-247-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 290W | 290W | N-CHANNEL | 28 ns | 195ns | 56A | 1.2kV | 4V | 133 ns | 4V @ 15V, 50A | 20V | 1200V | 5V | 600V, 50A, 5 Ω, 15V | 142nC | 210A | 28ns/133ns | 3mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IGW40N65F5FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Through Hole | Tube | 2008 | TrenchStop® | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Unknown | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Insulated Gate BIP Transistors | 255W | N-CHANNEL | Single | 255W | 74A | 650V | 1.6V | 1.6V | 2.1V @ 15V, 40A | 20V | 4.8V | 400V, 20A, 15 Ω, 15V | 95nC | 120A | 19ns/160ns | 360μJ (on), 100μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
|
NGTB30N120FL2WG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | ACTIVE (Last Updated: 6 days ago) | Through Hole | Tube | 2006 | yes | Active | 1 (Unlimited) | EAR99 | 16.25mm | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | No SVHC | 21.4mm | 5.3mm | Through Hole | 6.500007g | -55°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | 452W | 452W | Single | 240 ns | 60A | 1.2kV | 1.2kV | 2V | 2.3V @ 15V, 30A | Trench Field Stop | 1200V | 600V, 30A, 10 Ω, 15V | 220nC | 120A | 98ns/210ns | 2.6mJ (on), 700μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
 |
IKP15N65F5XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2008 | TrenchStop® | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Unknown | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 105W | Halogen Free | Single | 105W | 50 ns | 30A | 650V | 1.6V | 1.6V | 2.1V @ 15V, 15A | 400V, 7.5A, 39 Ω, 15V | 38nC | 45A | 17ns/150ns | 130μJ (on), 40μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
NGTB40N120FL3WG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2013 | yes | Active | Not Applicable | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | No SVHC | Through Hole | -55°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 454W | 454W | Single | 136 ns | 160A | 1.2kV | 2.3V | 1.7V | 2.3V @ 15V, 40A | Trench Field Stop | 1200V | 600V, 40A, 10 Ω, 15V | 212nC | 18ns/145ns | 1.6mJ (on), 1.1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IGZ75N65H5XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2008 | TrenchStop™ 5 | yes | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | 4 | TO-247-4 | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 395W | 395W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | Halogen Free | N-CHANNEL | 119A | 650V | 650V | POWER CONTROL | SILICON | 37 ns | 2.1V @ 15V, 75A | 415 ns | Trench | 400V, 37.5A, 10 Ω, 15V | 166nC | 300A | 26ns/347ns | 680μJ (on), 430μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
|
IGW08T120FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tube | 2008 | TrenchStop® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~150°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 70W | 1 | SINGLE | TO-247AD | COLLECTOR | N-CHANNEL | POWER CONTROL | SILICON | 66 ns | 2.2V @ 15V, 8A | 710 ns | NPT, Trench Field Stop | 1200V | 16A | 600V, 8A, 81 Ω, 15V | 53nC | 24A | 40ns/450ns | 1.37mJ | |||||||||||||||||||||||||||||||||||||||||||||
 |
SIGC158T120R3LEX1SA2 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Bulk | 2014 | yes | Active | 1 (Unlimited) | EAR99 | 150°C | -40°C | ROHS3 Compliant | Die | Surface Mount | Standard | NOT SPECIFIED | NOT SPECIFIED | YES | Insulated Gate BIP Transistors | N-CHANNEL | 1.2kV | 1.2kV | 1.2kV | 2.1V @ 15V, 150A | Trench Field Stop | 20V | 1200V | 6.5V | 450A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRGR2B60KDTRLPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | Standard | IRGR2B60 | Insulated Gate BIP Transistors | 35W | 35W | N-CHANNEL | Single | 68 ns | 6.3A | 600V | 2.25V | 25ns | 2.25V @ 15V, 2A | NPT | 20V | 6V | 75ns | 400V, 2A, 100 Ω, 15V | 12nC | 8A | 11ns/150ns | 74μJ (on), 39μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RJH60D7DPQ-E0#T2 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2012 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | RJH60D | 3 | Insulated Gate BIP Transistors | 300W | 300W | N-CHANNEL | Single | 100 ns | 90A | 600V | 2.2V | 2.2V @ 15V, 50A | Trench | 300V, 50A, 5 Ω, 15V | 130nC | 60ns/190ns | 1.1mJ (on), 600μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RJH60M3DPP-M0#T2 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2012 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-220-3 Full Pack | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | RJH60M | 3 | Insulated Gate BIP Transistors | 39.7W | 39.7W | N-CHANNEL | 90 ns | 35A | 600V | 2.3V | 2.3V @ 15V, 17A | Trench | 300V, 17A, 5 Ω, 15V | 60nC | 38ns/90ns | 290μJ (on), 290μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRGR2B60KDTRRPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Last Time Buy | 1 (Unlimited) | EAR99 | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | Standard | IRGR2B60 | Insulated Gate BIP Transistors | 35W | 35W | N-CHANNEL | Single | 68 ns | 6.3A | 600V | 2.25V | 25ns | 2.25V @ 15V, 2A | NPT | 20V | 6V | 75ns | 400V, 2A, 100 Ω, 15V | 12nC | 8A | 11ns/150ns | 74μJ (on), 39μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GT60N321(Q) | Toshiba Semiconductor and Storage | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | 2007 | Obsolete | 1 (Unlimited) | TO-3PL | Through Hole | 150°C TJ | Standard | GT60 | 170W | 2.5μs | 2.8V @ 15V, 60A | 1000V | 60A | 120A | 330ns/700ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRG4BC30FD1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | 2003 | Obsolete | 1 (Unlimited) | 3 | Non-RoHS Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | Not Qualified | 100W | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | COLLECTOR | N-CHANNEL | 46ns | POWER CONTROL | SILICON | 46 ns | 1.8V @ 15V, 17A | 740 ns | 600V | 31A | 480V, 17A, 23 Ω, 15V | 57nC | 120A | 22ns/250ns | 370μJ (on), 1.42mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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RJH60D1DPP-M0#T2 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2007 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | No SVHC | Through Hole | 150°C TJ | Standard | RJH60D | 3 | Insulated Gate BIP Transistors | 20.8W | 30W | 1 | TO-220AB | ISOLATED | N-CHANNEL | Single | 30 ns | 70 ns | 20A | 600V | 2.5V | POWER CONTROL | 42 ns | SILICON | 2.6V | 43 ns | 2.5V @ 15V, 10A | 117 ns | Trench | 300V, 10A, 5 Ω, 15V | 13nC | 30ns/42ns | 100μJ (on), 130μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
 |
IXGH85N30C3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Through Hole | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 333W | 333W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 75A | 300V | 1.9V | POWER CONTROL | SILICON | 55 ns | 1.9V @ 15V, 85A | 221 ns | PT | 200V, 42.5A, 3.3 Ω, 15V | 136nC | 420A | 25ns/100ns | 200μJ (on), 390μJ (off) |
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AUIRG4PH50S-205 Infineon Technologies
AUIRG4PH50S-205 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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IRGR2B60KDTRRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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