Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Number of Outputs | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Clamping Voltage | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXGX72N60B3H1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | LOW CONDUCTION LOSS | TO-247-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*72N60 | 3 | R-PSIP-T3 | Insulated Gate BIP Transistors | Not Qualified | 540W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 540W | 140 ns | 75A | 600V | 1.8V | POWER CONTROL | SILICON | 1.5V | 63 ns | 1.8V @ 15V, 60A | 370 ns | PT | 20V | 5V | 150ns | 480V, 50A, 3 Ω, 15V | 225nC | 450A | 31ns/152ns | 1.4mJ (on), 1mJ (off) | |||||||||||||||||||||||||||||||
 |
IXGH28N60B3D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Through Hole | Tube | 2007 | PolarHV™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*28N60 | 3 | Not Qualified | 190W | 190W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 25 ns | 66A | 600V | 1.8V | POWER CONTROL | SILICON | 45 ns | 1.8V @ 15V, 24A | 350 ns | PT | 400V, 24A, 10 Ω, 15V | 62nC | 150A | 19ns/125ns | 340μJ (on), 650μJ (off) | ||||||||||||||||||||||||||||||||||||||
 |
IKD04N60RFAATMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | Automotive, AEC-Q101, TrenchStop™ | yes | Not For New Designs | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -40°C~175°C TJ | Standard | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 75W | 75W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | Halogen Free | N-CHANNEL | 34 ns | 8A | 600V | 600V | POWER CONTROL | SILICON | 18 ns | 2.5V @ 15V, 4A | 216 ns | Trench | 400V, 4A, 43 Ω, 15V | 27nC | 12A | 12ns/116ns | 60μJ (on), 50μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
 |
SIGC25T60UNX1SA3 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 3.15V @ 15V, 30A | NPT | 600V | 30A | 400V, 30A, 1.8Ohm, 15V | 90A | 16ns/122ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IKW25T120FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2006 | TrenchStop® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | -40°C~150°C TJ | Standard | e3 | Tin (Sn) | 3 | 190W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Single | 190W | 200 ns | 50A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 82 ns | 2.2V @ 15V, 25A | 790 ns | NPT, Trench Field Stop | 1200V | 600V, 25A, 22 Ω, 15V | 155nC | 75A | 50ns/560ns | 4.2mJ | ||||||||||||||||||||||||||||||||||||||||
 |
IXGP12N100AU1 | IXYS | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Tube | 2000 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | No | 3 | HIGH SPEED, FAST | TO-220-3 | Through Hole | -55°C~150°C TJ | Standard | IXG*12N100 | 3 | Insulated Gate BIP Transistors | 100W | 100W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 60ns | 24A | 1kV | 1kV | POWER CONTROL | SILICON | 100 ns | 4V @ 15V, 12A | 900 ns | 20V | 1000V | 5.5V | 700ns | 800V, 12A, 120 Ω, 15V | 65nC | 48A | 100ns/850ns | 4mJ (off) | ||||||||||||||||||||||||||||||||||||||||
 |
STGW40H120DF2 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 32 Weeks | ACTIVE (Last Updated: 7 months ago) | Through Hole | Tube | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | 38.000013g | -55°C~175°C TJ | Standard | STGW40 | 468W | 468W | Single | 488 ns | 80A | 1.2kV | 1.2kV | 2.1V | 2.6V @ 15V, 40A | Trench Field Stop | 1200V | 600V, 40A, 10 Ω, 15V | 187nC | 160A | 18ns/152ns | 1mJ (on), 1.32mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
STGW25M120DF3 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | ACTIVE (Last Updated: 8 months ago) | Through Hole | Tube | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | No SVHC | Through Hole | 38.000013g | -55°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | STGW25 | Insulated Gate BIP Transistors | 375W | 375W | N-CHANNEL | Single | 265 ns | 50A | 1.2kV | 1.2kV | 1.85V | 2.3V @ 15V, 25A | Trench Field Stop | 20V | 1200V | 7V | 600V, 25A, 15 Ω, 15V | 85nC | 100A | 28ns/150ns | 850μJ (on), 1.3mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
 |
IKW50N65H5AXKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2013 | Automotive, AEC-Q101, TrenchStop™ | yes | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 270W | 270W | 1 | COLLECTOR | Halogen Free | N-CHANNEL | Single | 58 ns | 80A | 650V | 650V | POWER CONTROL | SILICON | 33 ns | 2.1V @ 15V, 50A | 213 ns | Trench | 400V, 25A, 12 Ω, 15V | 116nC | 150A | 21ns/173ns | 450μJ (on), 160μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
|
SIGC25T60NCX1SA2 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 2.5V @ 15V, 30A | NPT | 600V | 30A | 300V, 30A, 8.2Ohm, 15V | 90A | 21ns/110ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SIGC07T60SNCX7SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 2.5V @ 15V, 6A | NPT | 600V | 6A | 400V, 6A, 50Ohm, 15V | 18A | 24ns/248ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FGI3236-F085 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Through Hole | Tube | 2017 | Automotive, AEC-Q101, EcoSPARK® | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | 2.084g | -40°C~175°C TJ | Logic | e3 | MATTE TIN | R-PSIP-T3 | Insulated Gate BIP Transistors | 187W | 187W | 1 | 1 | COLLECTOR | N-CHANNEL | Single | 360V | 44A | 360V | 1.32V | 7000ns | AUTOMOTIVE IGNITION | SILICON | 2350 ns | 1.4V @ 4V, 6A | 7040 ns | 2.2V | 300V, 1k Ω, 5V | 20nC | -/5.4μs | ||||||||||||||||||||||||||||||||||||||||||
 |
AUIRGDC0250 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 25 Weeks | Through Hole | Tube | 2015 | Not For New Designs | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | No | 3 | TO-220-3 | Through Hole | 6.000006g | -55°C~150°C TJ | Standard | 543W | 543W | SUPER-220™ (TO-273AA) | 141A | 1.2kV | 1.57V | 1.57V | 1.57V @ 15V, 33A | 1200V | 141A | 600V, 33A, 5Ohm, 15V | 227nC | 99A | -/485ns | 15mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRG4BC30S-SPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2010 | Obsolete | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | Lead Free | 34A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | 600V | Standard | IRG4BC30S-SPBF | 100W | 100W | Single | 100W | 22 ns | D2PAK | 34A | 600V | 1.6V | 540 ns | 18ns | 1.6V | 1.6V @ 15V, 18A | 600V | 34A | 480V, 18A, 23Ohm, 15V | 50nC | 68A | 22ns/540ns | 260μJ (on), 3.45mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
 |
STGWA40S120DF3 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 32 Weeks | ACTIVE (Last Updated: 7 months ago) | Through Hole | Tube | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | No SVHC | Through Hole | -55°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | STGWA40 | R-PSFM-T3 | 468W | 468W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 355 ns | 80A | 1.2kV | 2.15V | POWER CONTROL | SILICON | 50 ns | 2.15V @ 15V, 40A | 158.46 ns | Trench Field Stop | 1200V | 600V, 40A, 15 Ω, 15V | 129nC | 160A | 35ns/148ns | 1.43mJ (on), 3.83mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
|
IXYH30N120B4 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 28 Weeks | XPT™, GenX4™ | Active | TO-247-3 | compliant | Through Hole | -55°C~175°C TJ | Standard | 500W | 60ns | 2.1V @ 15V, 25A | PT | 1200V | 100A | 960V, 25A, 5 Ω, 15V | 58nC | 174A | 20ns/245ns | 4.4mJ (on), 2.6mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXSK80N60B | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2003 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | LOW SATURATION VOLTAGE | TO-264-3, TO-264AA | Through Hole | 10.000011g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXS*80N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 500W | 500W | 1 | COLLECTOR | N-CHANNEL | Single | 160A | 600V | 600V | POWER CONTROL | SILICON | 2.5V | 120 ns | 2.5V @ 15V, 80A | 450 ns | PT | 20V | 8V | 480V, 80A, 2.7 Ω, 15V | 240nC | 300A | 60ns/140ns | 4.2mJ (off) | ||||||||||||||||||||||||||||||||||||||||
 |
IKP08N65F5XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Through Hole | Tube | 2008 | TrenchStop® | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Unknown | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Insulated Gate BIP Transistors | 70W | Halogen Free | N-CHANNEL | Single | 70W | 41 ns | 18A | 650V | 1.6V | 1.6V | 2.1V @ 15V, 8A | 20V | 4.8V | 400V, 4A, 48 Ω, 15V | 22nC | 24A | 10ns/116ns | 70μJ (on), 20μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
 |
IXGA28N60A3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | 2016 | GenX3™ | Active | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | compliant | Surface Mount | -55°C~150°C TJ | Standard | 190W | 26ns | 1.4V @ 15V, 24A | PT | 600V | 75A | 480V, 24A, 10 Ω, 15V | 66nC | 170A | 18ns/300ns | 700μJ (on), 2.4mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRG4PC50SPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Bulk | 2000 | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | 15.875mm | ROHS3 Compliant | Lead Free | 70A | No | 3 | TO-247-3 | No SVHC | 20.2946mm | 5.3mm | Through Hole | -55°C~150°C TJ | 600V | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 250 | 30 | Insulated Gate BIP Transistors | 200W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Dual | 200W | 33 ns | 70A | 600V | 1.36V | 650 ns | SILICON | 30ns | 1.36V | 62 ns | 1.36V @ 15V, 41A | 1700 ns | 20V | 6V | 600ns | 480V, 41A, 5 Ω, 15V | 180nC | 140A | 33ns/650ns | 720μJ (on), 8.27mJ (off) | ||||||||||||||||||||||||||||||
 |
FGH75T65SHDT-F155 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | ACTIVE (Last Updated: 1 week ago) | Through Hole | Tube | yes | Active | 1 (Unlimited) | ROHS3 Compliant | 3 | TO-247-3 | not_compliant | Through Hole | 6.39g | -55°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 455W | 455W | Single | 76 ns | 150A | 650V | 2.1V | 2.1V @ 15V, 75A | Trench Field Stop | 400V, 75A, 3 Ω, 15V | 123nC | 225A | 28ns/86ns | 3mJ (on), 750μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
APT36GA60BD15 | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 29 Weeks | Through Hole | Tube | 1999 | POWER MOS 8™ | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 290W | 290W | 1 | COLLECTOR | N-CHANNEL | Single | 65A | 600V | 600V | POWER CONTROL | SILICON | 29 ns | 2.5V @ 15V, 20A | 262 ns | PT | 30V | 6V | 400V, 20A, 10 Ω, 15V | 18nC | 109A | 16ns/122ns | 307μJ (on), 254μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
|
IXGH40N60C | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2003 | HiPerFAST™, Lightspeed™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*40N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 250W | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 75A | 600V | 600V | MOTOR CONTROL | SILICON | 60 ns | 2.5V @ 15V, 40A | 155 ns | 20V | 5V | 480V, 40A, 4.7 Ω, 15V | 116nC | 150A | 25ns/100ns | 850μJ (off) | |||||||||||||||||||||||||||||||||||||||||
|
IRG4PC30SPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Bulk | 2003 | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | 15.875mm | ROHS3 Compliant | Lead Free | 34A | No | 3 | TO-247-3 | No SVHC | 20.2946mm | 5.3086mm | Through Hole | 38.000013g | -55°C~150°C TJ | 600V | Standard | SINGLE | Insulated Gate BIP Transistors | 100W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Dual | 100W | 34A | 600V | 1.6V | POWER CONTROL | SILICON | 19ns | 1.6V | 40 ns | 1.6V @ 15V, 18A | 1550 ns | 20V | 6V | 590ns | 480V, 18A, 23 Ω, 15V | 50nC | 68A | 22ns/540ns | 260μJ (on), 3.45mJ (off) | ||||||||||||||||||||||||||||||||||
 |
FGH30S150P | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2016 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | not_compliant | Through Hole | 6.39g | -55°C~175°C TJ | Standard | 8541.29.00.95 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 500W | 500W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AB | COLLECTOR | N-CHANNEL | 60A | 1.5kV | 2.4V | POWER CONTROL | SILICON | 372 ns | 2.4V @ 15V, 30A | 1080 ns | 1500V | 600V, 30A, 10 Ω, 15V | 369nC | 90A | 32ns/492ns | 1.16mJ (on), 900μJ (off) | ||||||||||||||||||||||||||||||||||||||||
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STGW30N90D | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | PowerMESH™ | Obsolete | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | STGW30 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 220W | 220W | 1 | N-CHANNEL | Single | 152 ns | 60A | 900V | 900V | POWER CONTROL | SILICON | 41 ns | 2.75V @ 15V, 20A | 928 ns | 25V | 5.75V | 900V, 20A, 10 Ω, 15V | 110nC | 135A | 29ns/275ns | 1.66mJ (on), 4.44mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
|
IRGPC50FD2 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | 2017 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 200W | TO-247AC | 1.7V @ 15V, 39A | 600V | 70A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRG7PH46UDPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2010 | Obsolete | 1 (Unlimited) | 3 | EAR99 | 15.87mm | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | No SVHC | 20.7mm | 5.3086mm | Through Hole | 38.000013g | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 390W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Single | 390W | 45 ns | 140 ns | 40A | 1.2kV | 2V | 60ns | POWER CONTROL | 410 ns | SILICON | 1.7V | 80 ns | 2V @ 15V, 40A | 680 ns | Trench | 1200V | 6V | 60ns | 600V, 40A, 10 Ω, 15V | 220nC | 160A | 45ns/410ns | 2.61mJ (on), 1.85mJ (off) | |||||||||||||||||||||||||||||||||
 |
IRG4RC10UDPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Surface Mount | Tube | 1999 | Obsolete | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | RoHS Compliant | Contains Lead | 8.5A | No | 3 | LOW CONDUCTION LOSS | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 1.2446mm | 6.22mm | Surface Mount | 350.003213mg | -55°C~150°C TJ | 600V | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | IRG4RC10UDPBF | R-PSSO-G2 | Insulated Gate BIP Transistors | 38W | 1 | TO-252AA | COLLECTOR | N-CHANNEL | Single | 38W | 40 ns | 600V | 28 ns | 8.5A | 600V | 2.6V | POWER CONTROL | 87 ns | SILICON | 16ns | 2.6V | 56 ns | 2.6V @ 15V, 5A | 345 ns | 20V | 210ns | 480V, 5A, 100 Ω, 15V | 15nC | 34A | 40ns/87ns | 140μJ (on), 120μJ (off) | |||||||||||||||||||||||
|
IXGP12N60B | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2002 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | TO-220-3 | Through Hole | 2.299997g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | IXG*12N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 100W | 100W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 24A | 600V | 600V | POWER CONTROL | SILICON | 40 ns | 2.1V @ 15V, 12A | 400 ns | 20V | 5V | 480V, 12A, 18 Ω, 15V | 32nC | 48A | 20ns/150ns | 500μJ (off) |
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IRG4PC30SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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