Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Max Dual Supply Voltage | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Drain to Source Voltage (Vdss) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SGF80N60UFTU | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | ACTIVE, NOT REC (Last Updated: 1 week ago) | Through Hole | Tube | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 40A | No | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | TO-3P-3 Full Pack | Through Hole | 6.962g | -55°C~150°C TJ | 600V | Standard | 8541.29.00.95 | e3 | Tin (Sn) | R-PSFM-T3 | 110W | 110W | 1 | ISOLATED | N-CHANNEL | Single | 80A | 600V | 600V | MOTOR CONTROL | SILICON | 85 ns | 2.6V @ 15V, 40A | 310 ns | 300V, 40A, 5 Ω, 15V | 175nC | 220A | 23ns/90ns | 570μJ (on), 590μJ (off) | ||||||||||||||||||||||||||||||||||||||||
 |
IHW30N90R | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2008 | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | TIN | 3 | NO | Insulated Gate BIP Transistors | 454W | 1 | TO-247AC | COLLECTOR | Not Halogen Free | N-CHANNEL | Single | 454W | 60A | 900V | 900V | SILICON | 1.7V | 1.7V @ 15V, 30A | 640 ns | Trench Field Stop | 20V | 6.4V | 600V, 30A, 15 Ω, 15V | 200nC | 90A | -/511ns | 1.46mJ | ||||||||||||||||||||||||||||||||||||||||
 |
SIGC100T60R3EX7SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | TrenchStop™ | Active | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -40°C~175°C TJ | Standard | Die | 1.9V @ 15V, 200A | Trench Field Stop | 600V | 200A | 600A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SIGC25T60UNX1SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2016 | no | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | Die | Surface Mount | -55°C~150°C TJ | Standard | UPPER | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 3 | YES | R-XUUC-N3 | Not Qualified | 1 | SINGLE | Halogen Free | N-CHANNEL | 600V | 600V | POWER CONTROL | SILICON | 600V | 29 ns | 3.15V @ 15V, 30A | 151 ns | NPT | 30A | 400V, 30A, 1.8 Ω, 15V | 90A | 16ns/122ns | |||||||||||||||||||||||||||||||||||||||||||||
 |
FGH20N6S2D | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | yes | Obsolete | 3 (168 Hours) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-247-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | e3 | MATTE TIN | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 3 | NO | R-PSFM-T3 | COMMERCIAL | 125W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 31ns | POWER CONTROL | SILICON | 11.5 ns | 2.7V @ 15V, 7A | 205 ns | 600V | 28A | 390V, 7A, 25 Ω, 15V | 30nC | 40A | 7.7ns/87ns | 25μJ (on), 58μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
 |
IGP10N60TXKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2015 | TrenchStop® | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 110W | 110W | 1 | TO-220AB | COLLECTOR | Halogen Free | N-CHANNEL | Single | 20A | 600V | 600V | POWER CONTROL | SILICON | 21 ns | 2.05V @ 15V, 10A | 296 ns | NPT, Trench Field Stop | 400V, 10A, 23 Ω, 15V | 62nC | 30A | 12ns/215ns | 430μJ | ||||||||||||||||||||||||||||||||||||||
 |
IRG4BC15UD-L | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | 2001 | Obsolete | 1 (Unlimited) | 3 | Non-RoHS Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~150°C TJ | Standard | e0 | Tin/Lead (Sn/Pb) | SINGLE | 225 | 30 | NO | R-PSIP-T3 | Not Qualified | 49W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 28ns | POWER CONTROL | SILICON | 37 ns | 2.4V @ 15V, 7.8A | 400 ns | 600V | 14A | 480V, 7.8A, 75 Ω, 15V | 23nC | 42A | 17ns/160ns | 240μJ (on), 260μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
|
STGF30M65DF2 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | ACTIVE (Last Updated: 8 months ago) | M | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | STGF30 | 38W | 140ns | 2V @ 15V, 30A | Trench Field Stop | 650V | 60A | 400V, 30A, 10 Ω, 15V | 80nC | 120A | 31.6ns/115ns | 300μJ (on), 960μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGH48N60C3C1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-247-3 | No SVHC | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | IXG*48N60 | 3 | Insulated Gate BIP Transistors | 300W | 300W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 75A | 600V | 600V | POWER CONTROL | SILICON | 2.5V | 47 ns | 2.5V @ 15V, 30A | 187 ns | PT | 20V | 5.5V | 400V, 30A, 3 Ω, 15V | 77nC | 250A | 19ns/60ns | 330μJ (on), 230μJ (off) | |||||||||||||||||||||||||||||||||||
 |
STGW60H65FB | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | Through Hole | Tube | Active | 1 (Unlimited) | EAR99 | 15.75mm | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | 20.15mm | 5.15mm | Through Hole | -55°C~175°C TJ | Standard | STGW60 | 375W | Single | 375W | 80A | 650V | 650V | 1.6V | 2.3V @ 15V, 60A | Trench Field Stop | 400V, 60A, 5 Ω, 15V | 306nC | 240A | 51ns/160ns | 1.09mJ (on), 626μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
RGT16NL65DGTL | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -40°C~175°C TJ | Standard | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 94W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 42ns | POWER CONTROL | SILICON | 27 ns | 2.1V @ 15V, 8A | 170 ns | Trench Field Stop | 650V | 16A | 400V, 8A, 10 Ω, 15V | 21nC | 24A | 13ns/33ns | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
SKB02N60ATMA1 | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | 30W | PG-TO263-3 | 130ns | 2.4V @ 15V, 2A | NPT | 600V | 6A | 400V, 2A, 118Ohm, 15V | 14nC | 12A | 20ns/259ns | 64μJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGH40N60A | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 1997 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | No | 3 | HIGH SPEED | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | IXG*40N60 | 3 | Insulated Gate BIP Transistors | 250W | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 100 ns | 75A | 600V | 600V | POWER CONTROL | 600 ns | SILICON | 300 ns | 3V @ 15V, 40A | 900 ns | 20V | 3 V | 5V | 480V, 40A, 22 Ω, 15V | 200nC | 150A | 100ns/600ns | 3mJ (off) | |||||||||||||||||||||||||||||||||||||
|
IRGS4615DPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Tube | 2012 | Obsolete | 1 (Unlimited) | EAR99 | 10.67mm | RoHS Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | 260.39037mg | -40°C~175°C TJ | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | Insulated Gate BIP Transistors | 99W | 99W | N-CHANNEL | Single | 60 ns | 23A | 600V | 1.85V | 1.55V | 1.85V @ 15V, 8A | 20V | 6.5V | 400V, 8A, 47 Ω, 15V | 19nC | 24A | 30ns/95ns | 70μJ (on), 145μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
|
STGWA40H65DFB | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | HB | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | STGWA40 | 283W | 62ns | 2V @ 15V, 40A | Trench Field Stop | 650V | 80A | 400V, 40A, 5 Ω, 15V | 210nC | 160A | 40ns/142ns | 498μJ (on), 363μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGP12N100 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2000 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | HIGH SPEED | TO-220-3 | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*12N100 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 100W | 100W | 1 | SINGLE | TO-220AB | COLLECTOR | N-CHANNEL | 24A | 1kV | 3.5V | POWER CONTROL | SILICON | 100 ns | 3.5V @ 15V, 12A | 900 ns | 20V | 1000V | 5V | 700ns | 800V, 12A, 120 Ω, 15V | 65nC | 48A | 100ns/850ns | 2.5mJ (off) | |||||||||||||||||||||||||||||||||||||
 |
RJH60D5BDPQ-E0#T2 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2017 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | RJH60D | 3 | Insulated Gate BIP Transistors | 200W | 200W | N-CHANNEL | Single | 25 ns | 75A | 600V | 2.2V | 2.2V @ 15V, 37A | Trench | 6V | 300V, 37A, 5 Ω, 15V | 78nC | 50ns/130ns | 400μJ (on), 810μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGX100N170 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2012 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | Not Qualified | 830W | 1 | COLLECTOR | N-CHANNEL | Single | 830W | 170A | 1.7kV | 3V | POWER CONTROL | SILICON | 2.5V | 285 ns | 3V @ 15V, 100A | 720 ns | NPT | 20V | 1700V | 5V | 425nC | 600A | ||||||||||||||||||||||||||||||||||||||||
|
AUIRGS4062D1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tube | 2013 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IRGS4062DPBF | Insulated Gate BIP Transistors | 246W | 246W | N-CHANNEL | Single | 102 ns | 59A | 600V | 1.77V | 41ns | 1.77V @ 15V, 24A | Trench | 20V | 6.5V | 40ns | 400V, 24A, 10 Ω, 15V | 77nC | 72A | 19ns/90ns | 532μJ (on), 311μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
 |
NGTB50N60L2WG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 21 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | e3 | Tin (Sn) | 500W | 500W | Single | 67 ns | 100A | 600V | 600V | 1.8V @ 15V, 50A | Trench Field Stop | 400V, 50A, 10 Ω, 15V | 310nC | 200A | 110ns/270ns | 800μJ (on), 600μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
SIGC11T60SNCX1SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2016 | no | Last Time Buy | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | Die | Surface Mount | -55°C~150°C TJ | Standard | UPPER | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | YES | S-XUUC-N2 | Not Qualified | 1 | SINGLE | Halogen Free | N-CHANNEL | 600V | 600V | POWER CONTROL | SILICON | 600V | 40 ns | 2.4V @ 15V, 10A | 224 ns | NPT | 10A | 400V, 10A, 25 Ω, 15V | 30A | 28ns/198ns | |||||||||||||||||||||||||||||||||||||||||||||
 |
GPI040A060MN-FD | Global Power | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | 2014 | Active | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IKW15N120BH6XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Tube | TrenchStop™ | Active | Not Applicable | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | 200W | 340ns | 2.3V @ 15V, 15A | Trench Field Stop | 1200V | 30A | 600V, 15A, 22 Ω, 15V | 92nC | 60A | 18ns/240ns | 700μJ (on), 550μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FGB20N60SF | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | No | 3 | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | 1.31247g | -55°C~150°C TJ | Standard | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | FGB20N60 | R-PSSO-G2 | Insulated Gate BIP Transistors | 208W | 208W | 1 | COLLECTOR | N-CHANNEL | Single | 600V | 40A | 600V | 600V | POWER CONTROL | SILICON | 2.2V | 28 ns | 2.8V @ 15V, 20A | 123 ns | Field Stop | 20V | 6.5V | 48ns | 400V, 20A, 10 Ω, 15V | 65nC | 60A | 13ns/90ns | 370μJ (on), 160μJ (off) | ||||||||||||||||||||||||||||
|
IXGH24N60AU1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 1997 | HiPerFAST™ | yes | Obsolete | Not Applicable | 3 | RoHS Compliant | Lead Free | 48A | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*24N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 150W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 150W | 50 ns | 48A | 600V | 600V | MOTOR CONTROL | SILICON | 2.7V | 40 ns | 2.7V @ 15V, 24A | 650 ns | 20V | 5.5V | 175ns | 480V, 24A, 10 Ω, 15V | 90nC | 96A | 25ns/150ns | 600μJ (on), 1.5mJ (off) | ||||||||||||||||||||||||||||||||||
|
NGTB25N120FL3WG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2016 | yes | Active | Not Applicable | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | No SVHC | Through Hole | -55°C~175°C TJ | Standard | 349W | 349W | 114 ns | 100A | 1.2kV | 2.4V | 1.7V | 2.4V @ 15V, 25A | Trench Field Stop | 1200V | 600V, 25A, 10 Ω, 15V | 136nC | 15ns/109ns | 1mJ (on), 700μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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IKW60N60H3FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Through Hole | Tube | 2005 | TrenchStop™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 416W | 416W | 1 | COLLECTOR | Not Halogen Free | N-CHANNEL | Single | 143 ns | 80A | 600V | 600V | POWER CONTROL | SILICON | 64 ns | 2.3V @ 15V, 60A | 314 ns | Trench Field Stop | 400V, 60A, 6 Ω, 15V | 375nC | 180A | 27ns/252ns | 2.1mJ (on), 1.13mJ (off) | |||||||||||||||||||||||||||||||||||||||
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APT65GP60B2G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Not For New Designs | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 100A | No | 3 | LOW CONDUCTION LOSS | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | 3 | 833W | 1 | COLLECTOR | N-CHANNEL | Single | 100A | 600V | 600V | POWER CONTROL | SILICON | 84 ns | 2.7V @ 15V, 65A | 219 ns | PT | 400V, 65A, 5 Ω, 15V | 210nC | 250A | 30ns/91ns | 605μJ (on), 896μJ (off) | |||||||||||||||||||||||||||||||||||||||||
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IXGH15N120C | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2000 | Lightspeed™ | no | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | LOW SWITCHING LOSSES | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e0 | Tin/Lead (Sn/Pb) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*15N120 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 150W | 150W | 1 | SINGLE | TO-247AD | COLLECTOR | N-CHANNEL | 30A | 1.2kV | 3.8V | POWER CONTROL | SILICON | 43 ns | 3.8V @ 15V, 15A | 470 ns | 20V | 1200V | 5V | 190ns | 960V, 15A, 10 Ω, 15V | 69nC | 60A | 25ns/150ns | 1.05mJ (off) | ||||||||||||||||||||||||||||||||||
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IXBF32N300 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2009 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | i4-Pac™-5 (3 Leads) | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | Not Qualified | 160W | 160W | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 1.5 μs | 40A | 3kV | 3.2V | POWER CONTROL | SILICON | 573 ns | 3.2V @ 15V, 32A | 795 ns | 3000V | 142nC | 250A |
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SGF80N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW
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SIGC100T60R3EX7SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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IRGS4615DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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NGTB50N60L2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW
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SIGC11T60SNCX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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IKW15N120BH6XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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FGB20N60SF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW
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NGTB25N120FL3WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW
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IKW60N60H3FKSA1 Infineon Technologies
IKW60N60H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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