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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Diameter Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Current HTS Code Power Rating JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Voltage Number of Elements Configuration JEDEC-95 Code Composition Tolerance Case Connection Halogen Free Polarity/Channel Type Temperature Coefficient Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IRFR2407TRLPBF IRFR2407TRLPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Tape & Reel (TR) 2000 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.026Ohm 75V SILICON N-Channel 26m Ω @ 25A, 10V 4V @ 250μA 2400pF @ 25V 110nC @ 10V 30A 42A Tc 75V 170A 130 mJ 10V ±20V
AO3160E AO3160E Alpha & Omega Semiconductor Inc. 0.0000
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0.00000000 18 Weeks Tape & Reel (TR) Active 1 (Unlimited) ROHS3 Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1.39W Ta N-Channel 500 Ω @ 16mA, 10V 3.2V @ 8μA 9.5pF @ 25V 900pC @ 10V 40mA Ta 600V 4.5V 10V ±20V
SKI07171 SKI07171 Sanken 0.0000
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0.00000000 download 12 Weeks Surface Mount Cut Tape (CT) 2014 Discontinued 1 (Unlimited) RoHS Compliant Lead Free TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 90W Tc 46A N-Channel 13.6m Ω @ 22.8A, 10V 2.5V @ 650μA 2520pF @ 25V 36.2nC @ 10V 46A Tc 75V 4.5V 10V ±20V
STW24NM65N STW24NM65N STMicroelectronics 0.0000
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0.00000000 Through Hole Tube MDmesh™ II yes Obsolete 1 (Unlimited) 3 ROHS3 Compliant Lead Free No TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) STW24N 3 R-PSFM-T3 FET General Purpose Power 1 Single 160W 25 ns 160W Tc 19A SWITCHING 0.19Ohm 80 ns SILICON N-Channel 190m Ω @ 9.5A, 10V 4V @ 250μA 2500pF @ 50V 70nC @ 10V 10ns 20 ns 25V 650V 19A Tc 76A 500 mJ 10V ±25V
RQ5E040TNTL RQ5E040TNTL ROHM Semiconductor 0.5042
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0.00000000 16 Weeks Cut Tape (CT) Active 1 (Unlimited) ROHS3 Compliant SC-96 Surface Mount 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 700mW Ta N-Channel 48m Ω @ 4A, 4.5V 1.5V @ 1mA 475pF @ 10V 8.3nC @ 4.5V 4A Ta 30V 2.5V 4.5V ±12V
IPP120N20NFDAKSA1 IPP120N20NFDAKSA1 Infineon Technologies 0.0000
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0.00000000 download 13 Weeks Through Hole Tube 2012 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-220-3 not_compliant Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) 1 TO-220AB DRAIN Halogen Free Single 300W 13 ns 200V 300W Tc 84A 24 ns SILICON N-Channel 12m Ω @ 84A, 10V 4V @ 270μA 6650pF @ 100V 87nC @ 10V 10ns 8 ns 20V 84A Tc 10V ±20V
IRFIZ48NPBF IRFIZ48NPBF Infineon Technologies 0.0000
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0.00000000 download 14 Weeks Through Hole Tube 1996 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Lead Free 36A No 3 AVALANCHE RATED TO-220-3 Full Pack No SVHC 9.8mm 4.826mm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 1 TO-220AB ISOLATED Single 42W 11 ns 54W Tc 140 ns 36A SWITCHING 32 ns SILICON N-Channel 16m Ω @ 22A, 10V 4V @ 250μA 1900pF @ 25V 89nC @ 10V 78ns 48 ns 20V 55V 4 V 40A 40A Tc 270 mJ 10V ±20V
FQB9N08TM FQB9N08TM ON Semiconductor 0.0000
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0.00000000 download Tape & Reel (TR) 2000 QFET® Obsolete 1 (Unlimited) TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) D2PAK (TO-263AB) 3.75W Ta 40W Tc N-Channel 210mOhm @ 4.65A, 10V 4V @ 250μA 250pF @ 25V 7.7nC @ 10V 9.3A Tc 80V 10V ±25V
SQD35N05-26L-GE3 SQD35N05-26L-GE3 Vishay Siliconix 0.3087
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0.00000000 download Surface Mount, Through Hole Tape & Reel (TR) 2015 TrenchFET® Obsolete 1 (Unlimited) 175°C -65°C 4.75mm 6.73mm ROHS3 Compliant Tin No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.39mm 6.22mm 2.26Ohm Surface Mount 1.437803g -55°C~175°C TJ MOSFET (Metal Oxide) 3W 1 1 Wirewound 1% 50 ppm/°C Single 50W 5 ns 20mOhm TO-252, (D-Pak) 50W Tc 30A 20 ns N-Channel 20mOhm @ 20A, 10V 2.5V @ 250μA 1175pF @ 25V 18nC @ 5V 18ns 100 ns 20V 55V 30A Tc 55V 1.175nF 4.5V 10V ±20V 20 mΩ
IPL60R060CFD7AUMA1 IPL60R060CFD7AUMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Tape & Reel (TR) Active 2A (4 Weeks) ROHS3 Compliant
SISH407DN-T1-GE3 SISH407DN-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Tape & Reel (TR) TrenchFET® Active 1 (Unlimited) ROHS3 Compliant PowerPAK® 1212-8SH Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) PowerPAK® 1212-8SH 3.6W Ta 33W Tc P-Channel 9.5mOhm @ 15.3A, 4.5V 1V @ 250μA 2760pF @ 10V 93.8nC @ 8V 15.4A Ta 25A Tc 20V 1.8V 4.5V ±8V
BSS84LT7G BSS84LT7G ON Semiconductor 0.0000
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0.00000000 40 Weeks Tape & Reel (TR) Active 1 (Unlimited) 3 ROHS3 Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING 260 10 YES R-PDSO-G3 1 SINGLE WITH BUILT-IN DIODE 225mW Ta 50V SILICON P-Channel 10 Ω @ 100mA, 5V 2V @ 250μA 36pF @ 5V 2.2nC @ 10V 0.13A 130mA Ta 50V 5V ±20V
AO4466L AO4466L Alpha & Omega Semiconductor Inc. 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) 8-SOIC (0.154, 3.90mm Width) compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 3.1W Ta N-Channel 23m Ω @ 9.4A, 10V 3V @ 250μA 820pF @ 15V 17nC @ 10V 9.4A Ta 30V 4.5V 10V ±20V
NTMFS4C06NBT3G NTMFS4C06NBT3G ON Semiconductor 0.0000
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0.00000000 16 Weeks Tape & Reel (TR) Active 1 (Unlimited) ROHS3 Compliant 8-PowerTDFN, 5 Leads Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 2.55W Ta 30.5W Tc N-Channel 4m Ω @ 30A, 10V 2.1V @ 250μA 1683pF @ 15V 26nC @ 10V 20A Ta 69A Tc 30V 4.5V 10V ±20V
2SK066400L 2SK066400L Panasonic Electronic Components 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 Obsolete 1 (Unlimited) RoHS Compliant Lead Free 100mA SC-70, SOT-323 Surface Mount 150°C TJ 50V MOSFET (Metal Oxide) SMini3-G1 150mW Ta 100mA N-Channel 50Ohm @ 20mA, 5V 3.5V @ 100μA 15pF @ 5V 100mA Ta 50V 15pF 5V 8V 50 Ω
BSZ034N04LSATMA1 BSZ034N04LSATMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2012 Automotive, AEC-Q101, OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED S-PDSO-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 40V 2.1W Ta 52W Tc 40A SWITCHING 0.0046Ohm SILICON N-Channel 3.4m Ω @ 20A, 10V 2V @ 250μA 1800pF @ 20V 25nC @ 10V 4ns 20V 19A 19A Ta 40A Tc 160A 70 mJ 4.5V 10V ±20V
BUK9213-60EJ BUK9213-60EJ Nexperia USA Inc. 0.0000
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0.00000000 download 12 Weeks Tape & Reel (TR) 2016 Obsolete 1 (Unlimited) Non-RoHS Compliant DPAK
AOT10N60L AOT10N60L Alpha & Omega Semiconductor Inc. 6.1490
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0.00000000 18 Weeks Tube Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NO FET General Purpose Power Single 250W Tc N-Channel 750m Ω @ 5A, 10V 4.5V @ 250μA 1600pF @ 25V 40nC @ 10V 10A 10A Tc 600V 10V ±30V
FDZ7296 FDZ7296 ON Semiconductor 0.0000
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0.00000000 download Tape & Reel (TR) 2007 PowerTrench® Obsolete 1 (Unlimited) 18-WFBGA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 18-BGA (2.5x4) 2.1W Ta N-Channel 8.5mOhm @ 11A, 10V 3V @ 250μA 1520pF @ 15V 31nC @ 10V 11A Ta 30V 4.5V 10V ±20V
SSM3J09FU,LF SSM3J09FU,LF Toshiba Semiconductor and Storage 0.3220
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant SC-70, SOT-323 Surface Mount 150°C MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 150mW Ta P-Channel 2.7 Ω @ 100mA, 10V 1.8V @ 100μA 22pF @ 5V 200mA Ta 30V 3.3V 10V ±20V
IXFC16N50P IXFC16N50P IXYS 0.0000
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0.00000000 download Through Hole Tube 2006 HiPerFET™, PolarHT™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant Lead Free 16A 3 AVALANCHE RATED, UL RECOGNIZED ISOPLUS220™ Through Hole -55°C~150°C TJ 500V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 ISOLATED Single 125W 125W Tc 10A SWITCHING 0.45Ohm 70 ns SILICON N-Channel 450m Ω @ 8A, 10V 5.5V @ 2.5mA 2250pF @ 25V 43nC @ 10V 25ns 22 ns 30V 500V 10A Tc 750 mJ 10V ±30V
CPC3960ZTR CPC3960ZTR IXYS Integrated Circuits Division 0.0000
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0.00000000 download 8 Weeks Surface Mount Tape & Reel (TR) 2015 Active 1 (Unlimited) 125°C -55°C ROHS3 Compliant TO-261-4, TO-261AA Surface Mount -55°C~125°C TJ MOSFET (Metal Oxide) SOT-223 1.8W Ta N-Channel 44Ohm @ 100mA, 0V 100pF @ 25V Depletion Mode 600V 100pF 0V ±15V 44 Ω
FDP20N50 FDP20N50 ON Semiconductor 0.0000
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0.00000000 download 9 Weeks ACTIVE (Last Updated: 2 days ago) Through Hole Tube 2004 UniFET™ yes Active 1 (Unlimited) 3 EAR99 10.1mm ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED TO-220-3 No SVHC 9.4mm 4.7mm 230MOhm Through Hole 1.8g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 FET General Purpose Power 1 TO-220AB Single 250W 95 ns 5V 250W Tc 20A SWITCHING 100 ns SILICON N-Channel 230m Ω @ 10A, 10V 5V @ 250μA 3120pF @ 25V 59.5nC @ 10V 375ns 105 ns 30V 500V 20A Tc 80A 10V ±30V
FJ3303010L FJ3303010L Panasonic Electronic Components 0.0431
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0.00000000 download 10 Weeks Surface Mount Tape & Reel (TR) 2017 Active 1 (Unlimited) 3 EAR99 1.2mm RoHS Compliant Lead Free 3 SOT-723 No SVHC unknown 470μm 800μm 7Ohm Surface Mount 150°C TJ MOSFET (Metal Oxide) DEPLETION MODE 8541.21.00.95 DUAL FLAT NOT SPECIFIED NOT SPECIFIED 1 N-CHANNEL Single 100 ns -1V 100mW Ta 100mA SWITCHING 100 ns SILICON P-Channel 7 Ω @ 10mA, 4V 1.5V @ 1μA 12pF @ 3V 12V 30V -1 V 0.1A 100mA Ta 2.5V 4V ±12V
TPH5900CNH,L1Q TPH5900CNH,L1Q Toshiba Semiconductor and Storage 0.0014
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2014 U-MOSVIII-H yes Active 1 (Unlimited) 5 RoHS Compliant 8 8-PowerVDFN Surface Mount 850.995985mg 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED S-PDSO-F5 1 1 SINGLE WITH BUILT-IN DIODE DRAIN 14 ns 1.6W Ta 42W Tc 9A SWITCHING 0.059Ohm 19 ns SILICON N-Channel 59m Ω @ 4.5A, 10V 4V @ 200μA 600pF @ 75V 7nC @ 10V 5.2ns 4.5 ns 20V 150V 9A 9A Ta 35A 36 mJ 10V ±20V
EPC2024 EPC2024 EPC 7.3165
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 eGaN® Active 1 (Unlimited) 150°C -40°C ROHS3 Compliant Die Surface Mount -40°C~150°C TJ GaNFET (Gallium Nitride) Die 60A N-Channel 1.5mOhm @ 37A, 5V 2.5V @ 19mA 2100pF @ 20V 60A Ta 40V 2.1nF 5V +6V, -4V 1.5 mΩ
DMG4468LFG-7 DMG4468LFG-7 Diodes Incorporated 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2009 yes Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant No 8 8-PowerUDFN No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e4 Nickel/Palladium/Gold (Ni/Pd/Au) DUAL 260 40 8 R-PDSO-N5 1 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 5.46 ns 990mW Ta 7.62A SWITCHING 30V 18.84 ns SILICON N-Channel 15m Ω @ 11.6A, 10V 2V @ 250μA 867pF @ 10V 18.85nC @ 10V 14.53ns 6.01 ns 20V 7.62A Ta 30V 4.5V 10V ±20V
SIRA60DP-T1-RE3 SIRA60DP-T1-RE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Tape & Reel (TR) TrenchFET® Gen IV Active 1 (Unlimited) PowerPAK® SO-8 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) PowerPAK® SO-8 57W Tc N-Channel 0.94mOhm @ 20A, 10V 2.2V @ 250μA 7650pF @ 15V 125nC @ 10V 100A Tc 30V 4.5V 10V +20V, -16V
BSS123ATA BSS123ATA Diodes Incorporated 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2012 Obsolete 1 (Unlimited) 3 SMD/SMT EAR99 2.9mm RoHS Compliant Contains Lead 170mA 3 TO-236-3, SC-59, SOT-23-3 No SVHC unknown 1mm 1.3mm Surface Mount 7.994566mg -55°C~150°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE 15A e3 Matte Tin (Sn) DUAL GULL WING 260 40 1 Not Qualified 100V 1 Single 360mW 10 ns 360mW Ta 170mA SWITCHING 15 ns SILICON N-Channel 6 Ω @ 170mA, 10V 2V @ 1mA 25pF @ 25V 10ns 10 ns 20V 100V 100V 2 V 170mA Ta 4.5V 10V ±20V
IXFP130N10T2 IXFP130N10T2 IXYS 0.0000
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0.00000000 download 26 Weeks Through Hole Tube 2009 GigaMOS™, HiPerFET™, TrenchT2™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 360W Tc 130A SWITCHING 0.0091Ohm 100V SILICON N-Channel 9.1m Ω @ 65A, 10V 4.5V @ 1mA 6600pF @ 25V 130nC @ 10V 130A Tc 100V 300A 800 mJ 10V ±20V
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