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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier JESD-609 Code Terminal Finish Terminal Position Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
IXFX200N10P IXFX200N10P IXYS 0.0000
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0.00000000 download 30 Weeks Through Hole Tube 2006 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-247-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 830W 830W Tc 200A SWITCHING 0.0075Ohm 150 ns SILICON N-Channel 7.5m Ω @ 100A, 10V 5V @ 8mA 7600pF @ 25V 235nC @ 10V 35ns 90 ns 20V 100V 200A Tc 400A 4000 mJ 10V ±20V
STP60NF06 STP60NF06 STMicroelectronics 0.0000
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0.00000000 download 12 Weeks ACTIVE (Last Updated: 8 months ago) Through Hole Tube STripFET™ II Active 1 (Unlimited) 3 EAR99 10.4mm ROHS3 Compliant Lead Free 60A No 3 TO-220-3 No SVHC 19.68mm 4.6mm 16mOhm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE TO-220-POA e3 Matte Tin (Sn) STP60N 3 1 FET General Purpose Power 1 TO-220AB Single 110W 15 ns 4V 110W Tc 60A 175°C SWITCHING 45 ns SILICON N-Channel 16m Ω @ 30A, 10V 4V @ 250μA 1660pF @ 25V 73nC @ 10V 108ns 20 ns 20V 60V 60V 60A Tc 240A 10V ±20V
NDF02N60ZG NDF02N60ZG Rochester Electronics, LLC 0.0000
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0.00000000 download Tube Obsolete 1 (Unlimited) ROHS3 Compliant TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) TO-220FP 24W Tc N-Channel 4.8Ohm @ 1A, 10V 4.5V @ 50μA 274pF @ 25V 10.1nC @ 10V 2.4A Tc 600V 10V ±30V
STP6NC60 STP6NC60 STMicroelectronics 0.0000
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0.00000000 download Through Hole Tube PowerMESH™ II Obsolete 3 (168 Hours) 3 EAR99 ROHS3 Compliant No 3 AVALANCHE RATED TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE STP6N 3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-220AB 16 ns 125W Tc 6A SWITCHING 600V SILICON N-Channel 1.2 Ω @ 3A, 10V 4V @ 250μA 1020pF @ 25V 45.5nC @ 10V 14ns 16 ns 30V 6A 6A Tc 600V 24A 10V ±30V
IXTH160N15T IXTH160N15T IXYS 17.0812
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0.00000000 download Through Hole Tube 2007 TrenchHV™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED TO-247-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-247AD DRAIN 830W Tc 160A SWITCHING 0.0096Ohm 150V SILICON N-Channel 9.6m Ω @ 500mA, 10V 5V @ 1mA 8800pF @ 25V 160nC @ 10V 160A Tc 150V 430A 1000 mJ 10V ±30V
2SK2225-E 2SK2225-E Renesas Electronics America 0.0000
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0.00000000 download 16 Weeks Tube 2005 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-3PFM, SC-93-3 25.5mm Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e2 Tin/Copper (Sn/Cu) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 1 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 50W 17 ns 50W Tc 2A SWITCHING 150 ns SILICON N-Channel 12 Ω @ 1A, 15V 984.7pF @ 30V 20V 1.5kV 2A 2A Ta 1500V 7A 15V ±20V
BUZ111SLE3045A BUZ111SLE3045A Rochester Electronics, LLC 0.0000
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0.00000000 Obsolete ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount 175°C MOSFET (Metal Oxide) TO-263 300W N-Channel 80A 50V
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