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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Height Width Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Surface Mount JESD-30 Code Number of Channels Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Element Configuration Turn On Delay Time Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Capacitance - Input
MCH6336-P-TL-E MCH6336-P-TL-E Rochester Electronics, LLC 0.0000
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0.00000000 download Tape & Reel (TR) Obsolete 1 (Unlimited) Non-RoHS Compliant 6-SMD, Flat Leads Surface Mount 6-MCPH
STFW38N65M5 STFW38N65M5 STMicroelectronics 0.0000
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0.00000000 download 12 Weeks Through Hole Tube MDmesh™ V Active 1 (Unlimited) 3 EAR99 15.7mm ROHS3 Compliant 3 ULTRA LOW RESISTANCE ISOWATT218FX 26.7mm 5.7mm Through Hole 6.961991g 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED STFW 1 1 ISOLATED Single 57W Tc 30A SWITCHING 0.095Ohm SILICON N-Channel 95m Ω @ 15A, 10V 5V @ 250μA 3000pF @ 100V 71nC @ 10V 9ns 9 ns 25V 650V 30A Tc 660 mJ 10V ±25V
EPC2024 EPC2024 EPC 7.3165
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 eGaN® Active 1 (Unlimited) 150°C -40°C ROHS3 Compliant Die Surface Mount -40°C~150°C TJ GaNFET (Gallium Nitride) Die 60A N-Channel 1.5mOhm @ 37A, 5V 2.5V @ 19mA 2100pF @ 20V 60A Ta 40V 2.1nF 5V +6V, -4V 1.5 mΩ
APT8014L2LLG APT8014L2LLG Microsemi Corporation 0.0000
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0.00000000 download IN PRODUCTION (Last Updated: 1 month ago) Through Hole Tube 1997 POWER MOS 7® Active 1 (Unlimited) 150°C -55°C RoHS Compliant Lead Free 52A No 3 TO-264-3, TO-264AA Through Hole 800V MOSFET (Metal Oxide) 730W 1 20 ns 264 MAX™ [L2] 52A 69 ns N-Channel 140mOhm @ 26A, 10V 5V @ 5mA 7238pF @ 25V 285nC @ 10V 19ns 15 ns 30V 52A Tc 800V 9nF 90 mΩ
GA03JT12-247 GA03JT12-247 GeneSiC Semiconductor 0.0000
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0.00000000 download 18 Weeks Through Hole Tube 2013 Obsolete 1 (Unlimited) EAR99 RoHS Compliant 3 TO-247-3 Through Hole 6.390011g 175°C TJ SiC (Silicon Carbide Junction Transistor) NOT SPECIFIED NOT SPECIFIED Single 15W Tc 3A 460m Ω @ 3A 3A Tc 95°C 1200V
EPC2029ENGRT EPC2029ENGRT EPC 0.0000
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0.00000000 download Surface Mount 2012 150°C -40°C RoHS Compliant 31A 80V 3.2 mΩ 1.4nF
HUF75623P3 HUF75623P3 Rochester Electronics, LLC 0.0000
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0.00000000 download Tube UltraFET™ yes Obsolete 1 (Unlimited) 3 ROHS3 Compliant TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE NOT APPLICABLE NOT APPLICABLE NO R-PSFM-T3 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 85W Tc SWITCHING 0.064Ohm 100V SILICON N-Channel 64m Ω @ 22A, 10V 4V @ 250μA 790pF @ 25V 52nC @ 20V 22A 22A Tc 100V 10V ±20V
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