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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Height Width Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Avalanche Energy Rating (Eas) Turn On Time-Max (ton) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Turn Off Time-Max (toff)
NTLUS3A40PZCTAG NTLUS3A40PZCTAG Rochester Electronics, LLC 0.0000
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0.00000000 download Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant 6-UDFN Exposed Pad Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 6-UDFN (2x2) 700mW Ta P-Channel 29mOhm @ 6.4A, 4.5V 1V @ 250μA 2.6pF @ 15V 29nC @ 4.5V 4A Ta 20V 1.5V 4.5V ±8V
ZVN4206ASTOA ZVN4206ASTOA Diodes Incorporated 0.0000
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0.00000000 download Through Hole Tape & Reel (TR) 2006 Obsolete 1 (Unlimited) 3 EAR99 4.77mm RoHS Compliant Lead Free 600mA E-Line-3 unknown 4.01mm 2.41mm Through Hole 453.59237mg -55°C~150°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) WIRE 260 40 3 R-PSIP-W3 1 Not Qualified 1 Single 700mW 8 ns 700mW Ta 600mA SWITCHING 12 ns SILICON N-Channel 1 Ω @ 1.5A, 10V 3V @ 1mA 100pF @ 25V 12ns 12 ns 20V 60V 0.6A 600mA Ta 5V 10V ±20V
FK3306010L FK3306010L Panasonic Electronic Components 0.1828
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0.00000000 download 10 Weeks Surface Mount Cut Tape (CT) 2010 Active 1 (Unlimited) 3 EAR99 1.2mm RoHS Compliant No 3 SOT-723 No SVHC 470μm 800μm Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.21.00.95 e6 Tin/Bismuth (Sn/Bi) DUAL FLAT 1 Single 100 ns 1.2V 100mW Ta 100mA SWITCHING 15Ohm 100 ns SILICON N-Channel 12 Ω @ 10mA, 4V 1.5V @ 1μA 12pF @ 3V 12V 60V 1.2 V 0.1A 100mA Ta 2.5V 4V ±12V
TSM190N08CZ C0G TSM190N08CZ C0G Taiwan Semiconductor Corporation 0.0000
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0.00000000 download Tube Not For New Designs 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) TO-220 250W Tc N-Channel 4.2mOhm @ 90A, 10V 4V @ 250μA 8600pF @ 30V 160nC @ 10V 190A Tc 75V 10V ±20V
GA16JT17-247 GA16JT17-247 GeneSiC Semiconductor 0.0000
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0.00000000 download 18 Weeks Through Hole Tube 2013 Obsolete 1 (Unlimited) EAR99 RoHS Compliant 3 TO-247-3 No SVHC Through Hole 175°C TJ SiC (Silicon Carbide Junction Transistor) Other Transistors N-CHANNEL Single 282W Tc 16A 110m Ω @ 16A 1.7kV 16A Tc 90°C 1700V
APT1204R7KFLLG APT1204R7KFLLG Microsemi Corporation 0.0000
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0.00000000 download Through Hole Tube 2006 POWER MOS 7® yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 3.5A No 3 TO-220-3 Through Hole -55°C~150°C TJ 1.2kV MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER SINGLE 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 135W 7 ns 135W Tc 3.5A SWITCHING 20 ns SILICON N-Channel 4.7 Ω @ 1.75A, 10V 5V @ 1mA 715pF @ 25V 31nC @ 10V 2ns 24 ns 30V 3.5A Tc 1200V 425 mJ 10V ±30V
JAN2N6796 JAN2N6796 Microsemi Corporation 0.0000
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0.00000000 Through Hole Bulk 1997 Military, MIL-PRF-19500/557 Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant 3 TO-205AF Metal Can unknown Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.21.00.95 BOTTOM WIRE NOT SPECIFIED NOT SPECIFIED 2 FET General Purpose Power Qualified MIL-19500 1 SINGLE WITH BUILT-IN DIODE DRAIN 800mW Ta 25W Tc 8A SWITCHING 0.18Ohm 100V SILICON N-Channel 195m Ω @ 8A, 10V 4V @ 250μA 28.51nC @ 10V 20V 8A 8A Tc 100V 105ns 10V ±20V 85ns
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