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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Number of Terminals Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IRF3205ZLPBF IRF3205ZLPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 170W 18 ns 4V 170W Tc 75A SWITCHING 0.0065Ohm 45 ns SILICON N-Channel 6.5m Ω @ 66A, 10V 4V @ 250μA 3450pF @ 25V 110nC @ 10V 95ns 67 ns 20V 55V 75A Tc 440A 250 mJ 10V ±20V
AOL1422 AOL1422 Alpha & Omega Semiconductor Inc. 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) Obsolete 1 (Unlimited) RoHS Compliant 3-PowerSMD, Flat Leads unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 2.08W Ta 100W Tc 85A N-Channel 3.7m Ω @ 20A, 10V 3V @ 250μA 6800pF @ 15V 112nC @ 10V 19A Ta 85A Tc 30V 4.5V 10V ±20V
FDC5612 FDC5612 ON Semiconductor 0.0000
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0.00000000 download 5 Weeks ACTIVE (Last Updated: 1 day ago) Surface Mount Tape & Reel (TR) 1999 PowerTrench® yes Active 1 (Unlimited) 6 EAR99 3mm ROHS3 Compliant Lead Free Tin 4.3A No 6 SOT-23-6 Thin, TSOT-23-6 No SVHC 1.1mm 1.7mm 55mOhm Surface Mount 36mg -55°C~150°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 1 FET General Purpose Power 1 Single 1.6W 11 ns 2.2V 1.6W Ta 4.3A 150°C SWITCHING 19 ns SILICON N-Channel 55m Ω @ 4.3A, 10V 4V @ 250μA 650pF @ 25V 18nC @ 10V 8ns 8 ns 20V 60V 60V 4.3A Ta 6V 10V ±20V
IRF9540 IRF9540 Vishay Siliconix 0.0000
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0.00000000 download Through Hole Tube 2011 Obsolete 1 (Unlimited) 175°C -55°C 10.41mm Non-RoHS Compliant Contains Lead -19A No 3 TO-220-3 Unknown 9.01mm 4.7mm Through Hole 6.000006g -55°C~175°C TJ -100V MOSFET (Metal Oxide) 1 1 Single 150W 17 ns 200mOhm TO-220AB 150W Tc -19A 34 ns P-Channel 200mOhm @ 11A, 10V 4V @ 250μA 1400pF @ 25V 61nC @ 10V 73ns 57 ns 20V -100V -4 V 19A Tc 100V 1.4nF 10V ±20V 200 mΩ
FDB8444_F085 FDB8444_F085 Fairchild Semiconductor Corporation 0.0000
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0.00000000 icon-pbfree yes 1 (Unlimited) EAR99 RoHS Compliant not_compliant ENHANCEMENT MODE 8541.29.00.95 e3 Matte Tin (Sn) SINGLE GULL WING 260 NOT SPECIFIED 2 YES R-PSSO-G2 175°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-263AB DRAIN N-CHANNEL 167W 2 SWITCHING 0.0055Ohm 40V METAL-OXIDE SEMICONDUCTOR SILICON 70A 307 mJ
STW40N65M2 STW40N65M2 STMicroelectronics 0.0000
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0.00000000 download 16 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Tube MDmesh™ M2 Active 1 (Unlimited) EAR99 15.75mm ROHS3 Compliant Lead Free 3 TO-247-3 20.15mm 5.15mm Through Hole 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED STW40N FET General Purpose Power Single 15 ns 250W Tc 32A 96.5 ns N-Channel 99m Ω @ 16A, 10V 4V @ 250μA 2355pF @ 100V 56.5nC @ 10V 25V 32A Tc 650V 10V ±25V
3LN01C-TB-H 3LN01C-TB-H ON Semiconductor 0.0000
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0.00000000 download LAST SHIPMENTS (Last Updated: 1 week ago) Tape & Reel (TR) 1994 yes Obsolete 1 (Unlimited) EAR99 2.9mm RoHS Compliant Lead Free No 3 TO-236-3, SC-59, SOT-23-3 1.1mm 1.5mm Surface Mount 150°C TJ MOSFET (Metal Oxide) e6 Tin/Bismuth (Sn/Bi) 3 YES FET General Purpose Power Halogen Free Single 19 ns 250mW Ta 150mA 155 ns N-Channel 3.7 Ω @ 80mA, 4V 7pF @ 10V 1.58nC @ 10V 65ns 120 ns 10V 0.15A 150mA Ta 30V 1.5V 4V ±10V
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