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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Thickness Mounting Type Operating Temperature Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Surface Mount JESD-30 Code Number of Channels Subcategory Number of Elements Configuration Case Connection Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
CSD19533Q5A CSD19533Q5A Texas Instruments 0.0000
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0.00000000 12 Weeks ACTIVE (Last Updated: 6 days ago) Surface Mount Tape & Reel (TR) NexFET™ yes Active 1 (Unlimited) 5 EAR99 4.9mm ROHS3 Compliant Contains Lead Tin 8 AVALANCHE RATED 8-PowerTDFN No SVHC not_compliant 1.1mm 6mm 1mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL NO LEAD 260 NOT SPECIFIED CSD19533 1 FET General Purpose Power 1 DRAIN Single 3.2W 6 ns 2.8V 3.2W Ta 96W Tc 13A 150°C SWITCHING 16 ns SILICON N-Channel 9.4m Ω @ 13A, 10V 3.4V @ 250μA 2670pF @ 50V 35nC @ 10V 6ns 5 ns 20V 100A Ta 100V 6V 10V ±20V
CSD18543Q3A CSD18543Q3A Texas Instruments 0.0000
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Min: 1

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0.00000000 12 Weeks ACTIVE (Last Updated: 4 days ago) Tape & Reel (TR) yes Active 1 (Unlimited) 5 EAR99 150°C -55°C 3.3mm ROHS3 Compliant 8 AVALANCHE RATED 8-PowerVDFN 900μm 3.3mm 800μm Surface Mount ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL FLAT CSD18543 YES 1 1 DRAIN N-CHANNEL Single 66W 9 ns 8.1mOhm 35A 150°C SWITCHING METAL-OXIDE SEMICONDUCTOR 8 ns 20V 60V 55 mJ 6.2 pF 4.5V 10V ±20V
CSD18533Q5A CSD18533Q5A Texas Instruments 0.0000
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Min: 1

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0.00000000 6 Weeks ACTIVE (Last Updated: 3 days ago) Surface Mount Tape & Reel (TR) NexFET™ yes Active 1 (Unlimited) 5 EAR99 4.9mm ROHS3 Compliant Contains Lead No 8 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-PowerTDFN No SVHC 1.1mm 6mm 1mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL 260 CSD18533 FET General Purpose Powers 1 DRAIN Single 3.2W 5.2 ns 1.9V 3.2W Ta 116W Tc 100A SWITCHING 60V 15 ns SILICON N-Channel 5.9m Ω @ 18A, 10V 2.3V @ 250μA 2750pF @ 30V 36nC @ 10V 5.5ns 2 ns 20V 1.9 V 17A Ta 100A Tc 60V 9 pF 4.5V 10V ±20V
CSD19532KTTT CSD19532KTTT Texas Instruments 0.0000
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0.00000000 download 12 Weeks ACTIVE (Last Updated: 3 days ago) Surface Mount Tape & Reel (TR) NexFET™ yes Active 2 (1 Year) 2 10.18mm ROHS3 Compliant Contains Lead 3 AVALANCHE RATED TO-263-4, D2Pak (3 Leads + Tab), TO-263AA not_compliant 4.83mm 8.41mm 4.44mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING 260 NOT SPECIFIED CSD19532 1 DRAIN Single 250W Tc 200A SWITCHING 0.0066Ohm 100V SILICON N-Channel 5.6m Ω @ 90A, 10V 3.2V @ 250μA 5060pF @ 50V 57nC @ 10V 200A Ta 100V 400A 259 mJ 18 pF 6V 10V ±20V
CSD19536KTT CSD19536KTT Texas Instruments 0.0000
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0.00000000 6 Weeks ACTIVE (Last Updated: 1 day ago) Surface Mount Tape & Reel (TR) NexFET™ yes Active 2 (1 Year) 2 EAR99 10.18mm ROHS3 Compliant Contains Lead Tin 3 AVALANCHE RATED TO-263-4, D2Pak (3 Leads + Tab), TO-263AA not_compliant 4.83mm 8.41mm 4.44mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 NOT SPECIFIED CSD19536 1 1 DRAIN Single 375W 13 ns 375W Tc 200A 175°C SWITCHING 0.0028Ohm 32 ns SILICON N-Channel 2.4m Ω @ 100A, 10V 3.2V @ 250μA 12000pF @ 50V 153nC @ 10V 8ns 6 ns 20V 100V 200A Ta 400A 806 mJ 6V 10V ±20V
EPC8002 EPC8002 EPC 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 eGaN® Active 1 (Unlimited) 150°C -40°C ROHS3 Compliant Die Surface Mount -40°C~150°C TJ GaNFET (Gallium Nitride) Die 2A N-Channel 530mOhm @ 500mA, 5V 2.5V @ 250μA 21pF @ 32.5V 2A Ta 65V 21pF 5V +6V, -4V 530 mΩ
IPD650P06NMATMA1 IPD650P06NMATMA1 Infineon Technologies 0.0000
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0.00000000 18 Weeks Tape & Reel (TR) OptiMOS™ Active 1 (Unlimited) 2 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 83W Tc 0.065Ohm 60V SILICON P-Channel 65m Ω @ 22A, 10V 4V @ 1.04mA 1600pF @ 30V 39nC @ 10V 22A 22A Tc 60V 88A 329 mJ 10V ±20V
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