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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Number of Terminals Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IXFR38N80Q2 IXFR38N80Q2 IXYS 0.0000
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0.00000000 download Through Hole Tube 2004 HiPerFET™ yes Active 1 (Unlimited) 3 ROHS3 Compliant 3 UL RECOGNIZED ISOPLUS247™ Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 ISOLATED Single 416W 416W Tc 28A 0.24Ohm 60 ns SILICON N-Channel 240m Ω @ 19A, 10V 4.5V @ 8mA 8340pF @ 25V 190nC @ 10V 16ns 12 ns 30V 800V 28A Tc 150A 4000 mJ 10V ±30V
TPH3208LD TPH3208LD Transphorm 0.0000
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0.00000000 download 14 Weeks Tube 2016 yes Obsolete 3 (168 Hours) Non-RoHS Compliant 4-PowerDFN unknown Surface Mount -55°C~150°C TJ GaNFET (Gallium Nitride) 96W Tc N-Channel 130m Ω @ 13A, 8V 2.6V @ 300μA 760pF @ 400V 14nC @ 8V 20A Tc 650V 10V ±18V
GP2M023A050N GP2M023A050N Global Power 0.0000
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0.00000000 download 12 Weeks 2014 Discontinued Non-RoHS Compliant
IXRFSM12N100 IXRFSM12N100 IXYS-RF 0.0000
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0.00000000 Tube SMPD Obsolete 1 (Unlimited) 16-BESOP (0.790, 20.11mm Width), 15 Leads, Exposed Pad Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 940W N-Channel 1.05 Ω @ 6A, 15V 5.5V @ 250μA 2875pF @ 800V 77nC @ 10V 12A Tc 1000V 15V ±20V
CMPDM7003 TR CMPDM7003 TR Central Semiconductor 0.0000
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0.00000000 1 (Unlimited) EAR99 RoHS Compliant compliant ENHANCEMENT MODE 8541.21.00.95 e3 Matte Tin (Sn) DUAL GULL WING 260 10 3 YES R-PDSO-G3 150°C FET General Purpose Power Not Qualified 1 SINGLE N-CHANNEL 0.35W 3 SWITCHING 3Ohm 50V METAL-OXIDE SEMICONDUCTOR SILICON 0.28A 5 pF
R6050JNZC8 R6050JNZC8 ROHM Semiconductor 0.0000
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0.00000000 download Last Time Buy 1 (Unlimited) ROHS3 Compliant TO-3P-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 120W Tc N-Channel 83m Ω @ 25A, 15V 7V @ 5mA 4.5nF @ 100V 120nC @ 15V 50A Tc 600V 15V ±30V
IRLL024NTRPBF IRLL024NTRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 1999 HEXFET® Active 1 (Unlimited) 4 EAR99 6.6802mm ROHS3 Compliant Contains Lead, Lead Free Tin 3.1A No 3 AVALANCHE RATED, ULTRA LOW RESISTANCE TO-261-4, TO-261AA No SVHC 1.8mm 3.7mm 65mOhm Surface Mount -55°C~150°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE IRLL024NTRPBF DUAL GULL WING R-PDSO-G4 1 1 DRAIN Single 2.1W 7.4 ns 2V 1W Ta 58 ns 3.1A 150°C SWITCHING 18 ns SILICON N-Channel 65m Ω @ 3.1A, 10V 2V @ 250μA 510pF @ 25V 15.6nC @ 5V 21ns 25 ns 16V 55V 55V 2 V 3.1A Ta 4V 10V ±16V
GP2M005A060FG GP2M005A060FG SemiQ 0.0000
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0.00000000 download Tube Obsolete 1 (Unlimited) TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) TO-220F 32.8W Tc N-Channel 2.1Ohm @ 2.1A, 10V 5V @ 250μA 658pF @ 25V 14nC @ 10V 4.2A Tc 600V 10V ±30V
IXFR55N50 IXFR55N50 IXYS 0.0000
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0.00000000 download Through Hole Tube 2002 HiPerFET™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant Lead Free No 3 AVALANCHE RATED ISOPLUS247™ 90MOhm Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) 3 FET General Purpose Power 1 ISOLATED Single 400W 400W Tc 48A SWITCHING 120 ns SILICON N-Channel 90m Ω @ 27.5A, 10V 4.5V @ 8mA 9400pF @ 25V 330nC @ 10V 60ns 45 ns 20V 500V 48A Tc 220A 10V ±20V
IXFK520N075T2 IXFK520N075T2 IXYS / Littelfuse 0.0000
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0.00000000 download 30 Weeks Through Hole Tube 2009 GigaMOS™, TrenchT2™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED TO-264-3, TO-264AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1250W Tc 520A SWITCHING 0.0022Ohm 75V SILICON N-Channel 2.2m Ω @ 100A, 10V 5V @ 8mA 41000pF @ 25V 545nC @ 10V 520A Tc 75V 1350A 3000 mJ 10V ±20V
GP2M007A080F GP2M007A080F Global Power 0.0000
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0.00000000 download 12 Weeks 2014 Discontinued Non-RoHS Compliant
IRFR3504ZTRL IRFR3504ZTRL Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2005 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 90W Tc SWITCHING 0.009Ohm 40V SILICON N-Channel 9m Ω @ 42A, 10V 4V @ 50μA 1510pF @ 25V 45nC @ 10V 42A 42A Tc 40V 310A 77 mJ 10V ±20V
DMN1045UFR4-7 DMN1045UFR4-7 Diodes Incorporated 0.0000
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0.00000000 download 22 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 3-XFDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e4 Nickel/Palladium/Gold (Ni/Pd/Au) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE DRAIN 500mW Ta 3.2A SWITCHING 0.064Ohm 12V SILICON N-Channel 45m Ω @ 3.2A, 4.5V 1V @ 250μA 375pF @ 10V 4.8nC @ 4.5V 3.2A Ta 12V 1.5V 4.5V ±8V
IXTP1R6N50P IXTP1R6N50P IXYS 0.0000
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0.00000000 download Through Hole Tube 2006 PolarHV™ yes Discontinued 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 1A 3 AVALANCHE RATED TO-220-3 No SVHC Through Hole -55°C~150°C TJ 500V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 TO-220AB DRAIN Single 43W 5.5V 43W Tc 1.6A SWITCHING 45 ns SILICON N-Channel 6.5 Ω @ 500mA, 10V 5.5V @ 25μA 140pF @ 25V 3.9nC @ 10V 26ns 23 ns 30V 500V 1.6A Tc 2.5A 75 mJ 10V ±30V
CPC3909CTR CPC3909CTR IXYS Integrated Circuits Division 0.4479
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0.00000000 download 8 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) ROHS3 Compliant TO-243AA Surface Mount -40°C~110°C TA MOSFET (Metal Oxide) 1.1W Ta 300mA N-Channel 9 Ω @ 300mA, 0V Depletion Mode 300mA Ta 400V 0V 15V
BSS138L BSS138L ON Semiconductor 0.0000
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0.00000000 download 8 Weeks ACTIVE (Last Updated: 2 days ago) Surface Mount Tape & Reel (TR) 2012 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.11mm Surface Mount 30mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING 260 40 3 1 FET General Purpose Powers Not Qualified 1 Single 225mW 20 ns 1.25V 350mW Ta 200mA 150°C SWITCHING 20 ns SILICON N-Channel 3.5 Ω @ 200mA, 5V 1.5V @ 1mA 50pF @ 25V 2.4nC @ 10V 1.8ns 5.1 ns 20V 50V 0.2A 200mA Ta 5 pF 2.75V 5V ±20V
2SK3403(Q) 2SK3403(Q) Toshiba Semiconductor and Storage 0.5566
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0.00000000 download Through Hole Bulk 2007 Obsolete 1 (Unlimited) RoHS Compliant Lead Free No 3 TO-220-3, Short Tab Through Hole 150°C TJ MOSFET (Metal Oxide) 1 Single 100W 100W Tc 13A N-Channel 400m Ω @ 6A, 10V 5V @ 1mA 1600pF @ 25V 34nC @ 10V 28ns 10 ns 30V 450V 13A Ta 10V ±30V
FQPF5N15 FQPF5N15 Rochester Electronics, LLC 0.0000
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0.00000000 download Tube QFET® yes Obsolete 1 (Unlimited) 3 ROHS3 Compliant TO-220-3 Full Pack Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE ISOLATED 32W Tc SWITCHING 0.8Ohm 150V SILICON N-Channel 800m Ω @ 2.1A, 10V 4V @ 250μA 230pF @ 25V 7nC @ 10V 4.2A 4.2A Tc 150V 16.8A 55 mJ 10V ±25V
FQPF2N30 FQPF2N30 ON Semiconductor 0.0000
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0.00000000 download Tube 2000 QFET® Obsolete 1 (Unlimited) TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) TO-220F 16W Tc N-Channel 3.7Ohm @ 670mA, 10V 5V @ 250μA 130pF @ 25V 5nC @ 10V 1.34A Tc 300V 10V ±30V
DMP10H400SEQ-13 DMP10H400SEQ-13 Diodes Incorporated 0.0000
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0.00000000 download 17 Weeks Surface Mount Tape & Reel (TR) 2015 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 2W Ta 13.7W Tc 6A P-Channel 250m Ω @ 5A, 10V 3V @ 250μA 1239pF @ 25V 17.5nC @ 10V 2.3A Ta 6A Tc 100V 4.5V 10V ±20V
IXRFSM18N50 IXRFSM18N50 IXYS-RF 0.0000
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0.00000000 Tube SMPD Obsolete 1 (Unlimited) 16-BESOP (0.790, 20.11mm Width), 15 Leads, Exposed Pad Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 835W N-Channel 340m Ω @ 9.5A, 20V 6.5V @ 250μA 2250pF @ 400V 42nC @ 10V 19A Tc 500V 20V ±20V
IRFR9014TRLPBF IRFR9014TRLPBF Vishay Siliconix 0.7457
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0.00000000 download 8 Weeks Surface Mount Tape & Reel (TR) 2017 Active 1 (Unlimited) 150°C -55°C 6.73mm ROHS3 Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.39mm 6.22mm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) 1 1 Single 2.5W 11 ns 500mOhm D-Pak 2.5W Ta 25W Tc 5.1A 9.6 ns P-Channel 500mOhm @ 3.1A, 10V 4V @ 250μA 270pF @ 25V 12nC @ 10V 63ns 31 ns 20V -60V 5.1A Tc 60V 270pF 10V ±20V 500 mΩ
IXTY1R6N50D2 IXTY1R6N50D2 IXYS 42.0823
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0.00000000 download 24 Weeks Surface Mount Tube 2009 yes Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free 3 UL RECOGNIZED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 100W 100W Tc 1.6A AMPLIFIER SILICON N-Channel 2.3 Ω @ 800mA, 0V 645pF @ 25V 23.7nC @ 5V 20V Depletion Mode 1.6A Tc 500V ±20V
FQB25N33TM_F085 FQB25N33TM_F085 Fairchild Semiconductor Corporation 0.0000
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0.00000000 icon-pbfree yes 1 (Unlimited) EAR99 RoHS Compliant not_compliant ENHANCEMENT MODE 8541.29.00.95 e3 Matte Tin (Sn) SINGLE GULL WING 245 30 2 YES R-PSSO-G2 150°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN N-CHANNEL 250W 2 SWITCHING 0.23Ohm 330V METAL-OXIDE SEMICONDUCTOR SILICON 25A 100A 370 mJ
AUIRFS8408 AUIRFS8408 Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tube 2011 HEXFET® Obsolete 1 (Unlimited) EAR99 10.67mm RoHS Compliant Lead Free Tin No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) IRFS8408 1 FET General Purpose Power Single 294W 29 ns 3V 294W Tc 195A 108 ns N-Channel 1.6m Ω @ 100A, 10V 3.9V @ 250μA 10820pF @ 25V 324nC @ 10V 202ns 119 ns 20V 40V 3 V 195A Tc 10V ±20V
TP65H070LSG TP65H070LSG Transphorm 0.0000
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0.00000000 download 12 Weeks TP65H070L Active 3 (168 Hours) 3-PowerDFN Surface Mount -55°C~150°C TJ GaNFET (Cascode Gallium Nitride FET) 96W Tc N-Channel 85m Ω @ 16A, 10V 4.8V @ 700μA 600pF @ 400V 9.3nC @ 10V 25A Tc 650V 10V ±20V
IRFP460PBF IRFP460PBF Vishay Siliconix 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2002 Active 1 (Unlimited) 150°C -55°C 15.87mm ROHS3 Compliant Lead Free 20A No 3 TO-247-3 Unknown 20.7mm 5.31mm 270MOhm Through Hole 38.000013g -55°C~150°C TJ 500V MOSFET (Metal Oxide) 1 1 Single 280W 18 ns 4V 270mOhm TO-247-3 280W Tc 860 ns 20A 110 ns N-Channel 270mOhm @ 12A, 10V 4V @ 250μA 4200pF @ 25V 210nC @ 10V 59ns 58 ns 20V 500V 4 V 20A Tc 500V 4.2nF 10V ±20V 270 mΩ
CPC3701C CPC3701C IXYS Integrated Circuits Division 0.0000
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0.00000000 download Surface Mount Tube 2015 Obsolete 1 (Unlimited) 125°C -55°C RoHS Compliant 4 TO-243AA Surface Mount 130.492855mg -55°C~125°C TJ MOSFET (Metal Oxide) 1 1 1.1W 70 ns 1Ohm SOT-89 1.1W Ta 2.2A 50 ns N-Channel 1Ohm @ 300mA, 0V 40ns 150 ns 15V 60V Depletion Mode 60V 0V ±15V 1 Ω
BSS123W-7-F BSS123W-7-F Diodes Incorporated 0.0000
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0.00000000 download 13 Weeks Surface Mount Tape & Reel (TR) 2011 yes Active 1 (Unlimited) 3 EAR99 2.2mm ROHS3 Compliant Lead Free Tin 170mA No 3 HIGH RELIABILITY, LOW THRESHOLD SC-70, SOT-323 No SVHC 1mm 1.35mm 6Ohm Surface Mount 6.010099mg -55°C~150°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 40 3 1 FET General Purpose Powers 1 Single 200mW 8 ns 200mW Ta 170mA SWITCHING 13 ns SILICON N-Channel 6 Ω @ 170mA, 10V 2V @ 1mA 60pF @ 25V 8ns 8 ns 20V 100V 170mA Ta 6 pF 4.5V 10V ±20V
SIR106DP-T1-RE3 SIR106DP-T1-RE3 Vishay Siliconix 1.3625
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0.00000000 download 14 Weeks Tape & Reel (TR) TrenchFET® Gen IV Active 1 (Unlimited) ROHS3 Compliant PowerPAK® SO-8 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 6.6mOhm PowerPAK® SO-8 3.2W Ta 83.3W Tc N-Channel 8mOhm @ 15A, 10V 3.4V @ 250μA 3610pF @ 50V 64nC @ 10V 16.1A Ta 65.8A Tc 100V 7.5V 10V ±20V
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