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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Source Url Status Check Date Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
IXTA30N25L2 IXTA30N25L2 IXYS 9.6430
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0.00000000 28 Weeks Active TO-263-3, D2Pak (2 Leads + Tab), TO-263AB compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 355W Tc N-Channel 140m Ω @ 15A, 10V 4.5V @ 250μA 3200pF @ 25V 130nC @ 10V 30A Tc 250V 10V ±20V
PMPB19XP,115 PMPB19XP,115 Nexperia USA Inc. 0.0000
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0.00000000 download 8 Weeks Tape & Reel (TR) 2012 Active 1 (Unlimited) 6 ROHS3 Compliant 6 6-UDFN Exposed Pad Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 6 YES 1 1 DRAIN Single 16 ns -20V 1.7W Ta 12.5W Tc 7.2A SWITCHING 0.0225Ohm 43 ns SILICON P-Channel 22.5m Ω @ 7.2A, 4.5V 900mV @ 250μA 2890pF @ 10V 43.2nC @ 4.5V 54ns 36 ns -680mV -20V 7.2A Ta 20V 30A 1.8V 4.5V ±12V
AO7414 AO7414 Alpha & Omega Semiconductor Inc. 0.0000
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2007 Active 1 (Unlimited) ROHS3 Compliant SC-70, SOT-323 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power Single 350mW Ta 2A N-Channel 62m Ω @ 2A, 4.5V 1V @ 250μA 320pF @ 10V 3.8nC @ 4.5V 2A 2A Ta 20V 1.8V 4.5V ±8V
IPC65R037C6X1SA2 IPC65R037C6X1SA2 Infineon Technologies 0.0000
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0.00000000 Last Time Buy 1 (Unlimited) ROHS3 Compliant
SIRA52ADP-T1-RE3 SIRA52ADP-T1-RE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Tape & Reel (TR) TrenchFET® Gen IV Active 1 (Unlimited) ROHS3 Compliant PowerPAK® SO-8 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) PowerPAK® SO-8 4.8W Ta 48W Tc N-Channel 1.63mOhm @ 15A, 10V 2.4V @ 250μA 5500pF @ 20V 100nC @ 10V 41.6A Ta 131A Tc 40V 4.5V 10V +20V, -16V
TJ60S04M3L(T6L1,NQ TJ60S04M3L(T6L1,NQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI Active 1 (Unlimited) 2 RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-XSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 90W Tc 60A SWITCHING 0.0094Ohm 40V SILICON P-Channel 6.3m Ω @ 30A, 10V 3V @ 1mA 6510pF @ 10V 125nC @ 10V 96ns 240 ns 10V 60A Ta 40V 120A 146 mJ 6V 10V +10V, -20V
FQB13N06LTM FQB13N06LTM Rochester Electronics, LLC 0.0000
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0.00000000 download Tape & Reel (TR) QFET® yes Obsolete 1 (Unlimited) 2 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 260 NOT SPECIFIED 3 YES R-PSSO-G2 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.75W Ta 45W Tc SWITCHING 0.14Ohm 60V SILICON N-Channel 110m Ω @ 6.8A, 10V 2.5V @ 250μA 350pF @ 25V 6.4nC @ 5V 13.6A 13.6A Tc 60V 54.4A 90 mJ 5V 10V ±20V
TPN7R006PL,L1Q TPN7R006PL,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSIX-H Active 1 (Unlimited) 8-PowerVDFN Surface Mount 175°C MOSFET (Metal Oxide) 630mW Ta 75W Tc N-Channel 7m Ω @ 27A, 10V 2.5V @ 200μA 1875pF @ 30V 20nC @ 10V 54A Tc 60V 4.5V 10V ±20V
SI1410EDH-T1-E3 SI1410EDH-T1-E3 Vishay Siliconix 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2010 TrenchFET® yes Obsolete 1 (Unlimited) 6 EAR99 2.05mm ROHS3 Compliant Lead Free No 6 6-TSSOP, SC-88, SOT-363 Unknown 900μm 1.25mm 70mOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 PURE MATTE TIN DUAL GULL WING 260 30 6 FET General Purpose Powers 1 Single 1W 150 ns 1W Ta 3.7A SWITCHING 1.9 μs SILICON N-Channel 70m Ω @ 3.7A, 4.5V 450mV @ 250μA (Min) 8nC @ 4.5V 400ns 400 ns 12V 20V 450 mV 2.9A 2.9A Ta 1.8V 4.5V ±12V
NVMFS6B03NWFT3G NVMFS6B03NWFT3G ON Semiconductor 0.0000
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0.00000000 download 36 Weeks ACTIVE, NOT REC (Last Updated: 1 week ago) Surface Mount Tape & Reel (TR) 2015 yes Active 1 (Unlimited) ROHS3 Compliant Lead Free 8 8-PowerTDFN not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3.9W Ta 198W Tc N-Channel 4.8m Ω @ 20A, 10V 4V @ 250μA 4200pF @ 50V 58nC @ 10V 100V 10V ±16V
RJK0395DPA-00#J53 RJK0395DPA-00#J53 Rochester Electronics, LLC 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) Non-RoHS Compliant 8-PowerWDFN Surface Mount MOSFET (Metal Oxide) 8-WPAK 30W Tc N-Channel 7.7mOhm @ 15A, 10V 1.67pF @ 10V 11nC @ 4.5V 30A Ta 30V
SI7115DN-T1-E3 SI7115DN-T1-E3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2016 TrenchFET® yes Active 1 (Unlimited) 5 EAR99 3.05mm ROHS3 Compliant Lead Free No 8 PowerPAK® 1212-8 1.04mm 3.05mm Surface Mount -50°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL C BEND 260 40 8 S-XDSO-C5 1 Other Transistors 1 DRAIN Single 3.7W 11 ns 52W Tc 2.3A SWITCHING 0.295Ohm 52 ns SILICON P-Channel 295m Ω @ 4A, 10V 4V @ 250μA 1190pF @ 50V 42nC @ 10V 28ns 35 ns 20V -150V 8.9A Tc 150V 6V 10V ±20V
FQPF6N80C FQPF6N80C ON Semiconductor 0.0000
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0.00000000 download 9 Weeks ACTIVE (Last Updated: 10 hours ago) Through Hole Tube 2003 QFET® yes Active 1 (Unlimited) 3 EAR99 10.16mm ROHS3 Compliant Lead Free 5.5A No 3 TO-220-3 Full Pack No SVHC 9.19mm 4.7mm 2.5Ohm Through Hole 2.27g -55°C~150°C TJ 800V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) FET General Purpose Power 1 TO-220AB ISOLATED Single 51W 26 ns 5V 51W Tc 5.5A SWITCHING 47 ns SILICON N-Channel 2.5 Ω @ 2.75A, 10V 5V @ 250μA 1310pF @ 25V 30nC @ 10V 65ns 44 ns 30V 800V 5.5A Tc 22A 680 mJ 10V ±30V
STB20N65M5 STB20N65M5 STMicroelectronics 0.0000
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0.00000000 download 17 Weeks ACTIVE (Last Updated: 7 months ago) Surface Mount Tape & Reel (TR) MDmesh™ V Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 190MOhm Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING STB20N R-PSSO-G2 1 DRAIN Single 130W Tc 18A SWITCHING SILICON N-Channel 190m Ω @ 9A, 10V 5V @ 250μA 1434pF @ 100V 36nC @ 10V 7.5ns 7.5 ns 25V 710V 18A Tc 650V 72A 270 mJ 10V ±25V
RQ3G150GNTB RQ3G150GNTB ROHM Semiconductor 1.0500
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0.00000000 20 Weeks Cut Tape (CT) 2017 Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant 8-PowerVDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED YES R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN 20W Tc SWITCHING 0.0089Ohm 40V SILICON N-Channel 7.2m Ω @ 15A, 10V 2.5V @ 1mA 1450pF @ 20V 11.6nC @ 4.5V 15A 39A Tc 40V 60A 17 mJ 10V ±20V
BSC0402NSATMA1 BSC0402NSATMA1 Infineon Technologies 0.0000
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0.00000000 26 Weeks Active 1 (Unlimited) ROHS3 Compliant
MCH3477-TL-E MCH3477-TL-E ON Semiconductor 0.0000
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0.00000000 Tape & Reel (TR) yes Obsolete 1 (Unlimited) RoHS Compliant Lead Free No 3 3-SMD, Flat Lead Surface Mount 150°C TJ MOSFET (Metal Oxide) e6 Tin/Bismuth (Sn/Bi) 3 YES FET General Purpose Power Single 1W Ta 4.5A N-Channel 38m Ω @ 2A, 4.5V 410pF @ 10V 5.1nC @ 4.5V 4.5A Ta 20V 1.8V 4.5V ±12V
DMN2075U-7 DMN2075U-7 Diodes Incorporated 0.0000
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0.00000000 download 40 Weeks Surface Mount Tape & Reel (TR) 2012 yes Obsolete 1 (Unlimited) 3 EAR99 3mm ROHS3 Compliant Lead Free Tin 3 HIGH RELIABILITY TO-236-3, SC-59, SOT-23-3 No SVHC 1.1mm 1.4mm 45mOhm Surface Mount 7.994566mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 40 3 1 FET General Purpose Powers Not Qualified 1 Single 800mW 7.4 ns 1V 800mW Ta 4.2A SWITCHING 20V 28.1 ns SILICON N-Channel 38m Ω @ 3.6A, 4.5V 1V @ 250μA 594.3pF @ 10V 7nC @ 4.5V 9.8ns 6.7 ns 8V 4.2A Ta 20V 2.5V 4.5V ±8V
JAN2N6802 JAN2N6802 Microsemi Corporation 0.0000
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0.00000000 Through Hole Bulk Military, MIL-PRF-19500/557 Obsolete 1 (Unlimited) Non-RoHS Compliant 3 TO-205AF Metal Can Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) FET General Purpose Power Qualified Single 800mW Ta 25W Tc 2.5A N-Channel 1.6 Ω @ 2.5A, 10V 4V @ 250μA 33nC @ 10V 20V 2.5A Tc 500V 10V ±20V
IRF5801TRPBF IRF5801TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2002 HEXFET® Active 1 (Unlimited) 6 SMD/SMT EAR99 2.9972mm ROHS3 Compliant Contains Lead 600mA No 6 SOT-23-6 Thin, TSOT-23-6 No SVHC 990.6μm 1.7mm 2.2Ohm Surface Mount -55°C~150°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING FET General Purpose Power 1 Single 2W 6.5 ns 5.5V 2W Ta 600mA SWITCHING 8.8 ns SILICON N-Channel 2.2 Ω @ 360mA, 10V 5.5V @ 250μA 88pF @ 25V 3.9nC @ 10V 8ns 19 ns 30V 200V 200V 5.5 V 600mA Ta 4.8A 9.9 mJ 10V ±30V
SPD14N06S2-80 SPD14N06S2-80 Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2003 OptiMOS™ Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant Contains Lead 17A 3 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 unknown Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 7 ns 30W Tc 17A 0.08Ohm 22 ns SILICON N-Channel 80m Ω @ 7A, 10V 4V @ 14μA 400pF @ 25V 10nC @ 10V 28ns 27 ns 20V 14A 17A Tc 68A 10V ±20V
RJK0703DPN-E0#T2 RJK0703DPN-E0#T2 Renesas Electronics America 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2012 Last Time Buy 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 4 125W Tc 70A N-Channel 6.7m Ω @ 35A, 10V 4150pF @ 10V 56nC @ 10V 70A Ta 75V 10V ±20V
2SJ673-AZ 2SJ673-AZ Renesas Electronics America 0.1425
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0.00000000 download Through Hole Bulk 2004 Obsolete 1 (Unlimited) EAR99 ROHS3 Compliant TO-220-3 Isolated Tab Through Hole 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 3 Other Transistors Single 2W Ta 32W Tc 36A P-Channel 20m Ω @ 18A, 10V 4600pF @ 10V 87nC @ 10V 36A Tc 60V 4V 10V ±20V
FQP9N25C FQP9N25C Rochester Electronics, LLC 0.0000
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0.00000000 download Tube QFET® Obsolete 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) TO-220-3 74W Tc N-Channel 430mOhm @ 4.4A, 10V 4V @ 250μA 710pF @ 25V 35nC @ 10V 8.8A Tc 250V 10V ±30V
DMG2302U-7 DMG2302U-7 Diodes Incorporated 0.0000
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0.00000000 download 5 Weeks Surface Mount Digi-Reel® 2012 yes Obsolete 1 (Unlimited) 3 EAR99 3mm ROHS3 Compliant Lead Free No 3 HIGH RELIABILITY TO-236-3, SC-59, SOT-23-3 No SVHC 1mm 1.4mm 90MOhm Surface Mount 7.994566mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 40 3 1 FET General Purpose Powers 1 Single 800mW 7.4 ns 1V 800mW Ta 4.2A SWITCHING 28.1 ns SILICON N-Channel 90m Ω @ 3.6A, 4.5V 1V @ 50μA 594.3pF @ 10V 7nC @ 4.5V 9.8ns 6.7 ns 8V 20V 4.2A Ta 2.5V 4.5V ±8V
AOB12N50L AOB12N50L Alpha & Omega Semiconductor Inc. 5.6792
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0.00000000 18 Weeks Surface Mount Tape & Reel (TR) 2011 Active 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power Single 250W Tc 12A N-Channel 520m Ω @ 6A, 10V 4.5V @ 250μA 1633pF @ 25V 37nC @ 10V 12A Tc 500V 10V ±30V
MCH3484-TL-H MCH3484-TL-H ON Semiconductor 0.0000
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0.00000000 download ACTIVE, NOT REC (Last Updated: 1 week ago) Tape & Reel (TR) 2013 yes Not For New Designs 1 (Unlimited) EAR99 2mm ROHS3 Compliant Lead Free No 3 3-SMD, Flat Lead 850μm 1.6mm Surface Mount 150°C TJ MOSFET (Metal Oxide) e6 Tin/Bismuth (Sn/Bi) 3 YES FET General Purpose Powers Halogen Free Single 1W 8.9 ns 1W Ta 4.5A 63 ns N-Channel 40m Ω @ 2A, 2.5V 800mV @ 1mA 630pF @ 10V 11nC @ 2.5V 49ns 57 ns 5V 20V 4.5A Ta 0.9V 2.5V ±5V
IXFX44N55Q IXFX44N55Q IXYS 0.0000
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0.00000000 download Through Hole Bulk 2002 HiPerFET™ yes Active 1 (Unlimited) 3 ROHS3 Compliant 3 AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 DRAIN Single 500W 500W Tc 44A SWITCHING 0.12Ohm 75 ns SILICON N-Channel 120m Ω @ 22A, 10V 4.5V @ 4mA 6400pF @ 25V 190nC @ 10V 20ns 10 ns 20V 550V 44A Tc 176A 2500 mJ 10V ±20V
PSMN5R6-100XS,127 PSMN5R6-100XS,127 NXP Semiconductors 0.0000
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0.00000000 Tube 2012 Obsolete 1 (Unlimited) ROHS3 Compliant TO-220-3 Full Pack, Isolated Tab not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 3 60W Tc 2013-06-14 00:00:00 N-Channel 5.6m Ω @ 15A, 10V 4V @ 1mA 8061pF @ 50V 145nC @ 10V 61.8A Tc 100V 10V ±20V
FDMC8462 FDMC8462 ON Semiconductor 0.0000
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0.00000000 download 43 Weeks ACTIVE (Last Updated: 11 hours ago) Surface Mount Tape & Reel (TR) PowerTrench® yes Active 1 (Unlimited) 5 EAR99 3.3mm ROHS3 Compliant Lead Free Gold No 8 8-PowerTDFN No SVHC 1.05mm 3.3mm 5.8MOhm Surface Mount 32.13mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e4 Nickel/Palladium (Ni/Pd) DUAL S-PDSO-N5 FET General Purpose Power 1 DRAIN Single 2W 12 ns 2V 2W Ta 41W Tc 14A SWITCHING 27 ns SILICON N-Channel 5.8m Ω @ 13.5A, 10V 3V @ 250μA 2660pF @ 20V 43nC @ 10V 4ns 3 ns 20V 40V 64A 14A Ta 20A Tc 50A 4.5V 10V ±20V
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