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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
FQA11N90 FQA11N90 ON Semiconductor 0.0000
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0.00000000 download Tube 2007 QFET® yes Obsolete 1 (Unlimited) 3 TO-3P-3, SC-65-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 300W Tc SWITCHING 0.96Ohm 900V SILICON N-Channel 960m Ω @ 5.7A, 10V 5V @ 250μA 3500pF @ 25V 94nC @ 10V 11.4A 11.4A Tc 900V 45.6A 1000 mJ 10V ±30V
IRLR3103PBF IRLR3103PBF Rochester Electronics, LLC 0.0000
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0.00000000 download Tube HEXFET® Obsolete 1 (Unlimited) ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) D-Pak 107W Tc N-Channel 19mOhm @ 33A, 10V 1V @ 250μA 1.6pF @ 25V 50nC @ 4.5V 55A Tc 30V 4.5V 10V ±16V
FDL100N50F FDL100N50F ON Semiconductor 0.0000
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0.00000000 download 8 Weeks ACTIVE (Last Updated: 3 days ago) Through Hole Tube 2013 UniFET™ yes Active 1 (Unlimited) 3 EAR99 20mm ROHS3 Compliant 3 TO-264-3, TO-264AA No SVHC 29mm 5mm Through Hole 6.756g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) 260 30 1 FET General Purpose Power Not Qualified 1 Single 2.5kW 63 ns 3V 2500W Tc 100A 150°C SWITCHING 0.055Ohm 202 ns SILICON N-Channel 55m Ω @ 50A, 10V 5V @ 250μA 12000pF @ 25V 238nC @ 10V 186ns 105 ns 30V 500V 100A Tc 400A 5000 mJ 10V ±30V
IRF3205STRLPBF IRF3205STRLPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2001 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 110A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 5.084mm 10.54mm 8MOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 TO-252 DRAIN Single 200W 14 ns 4V 200W Tc 104 ns 110A 175°C SWITCHING 50 ns SILICON N-Channel 8m Ω @ 62A, 10V 4V @ 250μA 3247pF @ 25V 146nC @ 10V 101ns 65 ns 20V 55V 55V 4 V 75A 110A Tc 264 mJ 10V ±20V
IRFR3410TRRPBF IRFR3410TRRPBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C 6.7056mm RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) Single 110W 12 ns 39mOhm D-Pak 3W Ta 110W Tc 31A 40 ns N-Channel 39mOhm @ 18A, 10V 4V @ 250μA 1690pF @ 25V 56nC @ 10V 27ns 13 ns 20V 100V 31A Tc 100V 1.69nF 10V ±20V 39 mΩ
RFD14N05L RFD14N05L ON Semiconductor 0.0000
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0.00000000 download 8 Weeks ACTIVE (Last Updated: 1 day ago) Through Hole Tube 2004 yes Active 1 (Unlimited) 3 EAR99 6.8mm ROHS3 Compliant Lead Free Tin 14A No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.3mm 2.5mm 100mOhm Through Hole 343.08mg -55°C~175°C TJ 50V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 FET General Purpose Power 1 DRAIN Single 48W 13 ns 2V 48W Tc 125 ns 14A SWITCHING 42 ns SILICON N-Channel 100m Ω @ 14A, 5V 2V @ 250μA 670pF @ 25V 40nC @ 10V 24ns 16 ns 10V 50V 14A Tc 5V ±10V
IRF7495PBF IRF7495PBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Tube 2003 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.022Ohm 100V SILICON N-Channel 22m Ω @ 4.4A, 10V 4V @ 250μA 1530pF @ 25V 51nC @ 10V 7.3A 7.3A Ta 100V 58A 180 mJ 10V ±20V
IRF7425PBF IRF7425PBF Infineon Technologies 0.0000
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0.00000000 download Tube 2005 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G8 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.0082Ohm 20V SILICON P-Channel 8.2m Ω @ 15A, 4.5V 1.2V @ 250μA 7980pF @ 15V 130nC @ 4.5V 15A 15A Ta 20V 60A 2.5V 4.5V ±12V
APT56M60L APT56M60L Microsemi Corporation 0.0000
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0.00000000 download 21 Weeks IN PRODUCTION (Last Updated: 1 month ago) Through Hole Tube yes Active 1 (Unlimited) 3 RoHS Compliant Lead Free 56A No FAST SWITCHING, AVALANCHE RATED TO-264-3, TO-264AA Through Hole -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 PURE MATTE TIN SINGLE 3 R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE 1.04kW 65 ns 1040W Tc 60A SWITCHING 190 ns SILICON N-Channel 130m Ω @ 28A, 10V 5V @ 2.5mA 11300pF @ 25V 280nC @ 10V 75ns 60 ns 30V 60A Tc 10V ±30V
BUK9Y104-100B,115 BUK9Y104-100B,115 Nexperia USA Inc. 0.0000
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0.00000000 download 12 Weeks Tape & Reel (TR) 2010 Automotive, AEC-Q101, TrenchMOS™ Active 1 (Unlimited) 4 ROHS3 Compliant Tin No 4 SC-100, SOT-669 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 SINGLE THROUGH-HOLE 4 NO 1 SINGLE WITH BUILT-IN DIODE MO-235 DRAIN 59W 15 ns 100V 59W Tc 14.8A SWITCHING 36 ns SILICON N-Channel 99m Ω @ 5A, 10V 2.15V @ 1mA 1139pF @ 25V 11nC @ 5V 8ns 6 ns 15V 14.8A Tc 59A 35 mJ 5V 10V ±15V
HUFA76445P3 HUFA76445P3 ON Semiconductor 0.0000
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0.00000000 download Tube 2002 UltraFET™ Obsolete 1 (Unlimited) TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) TO-220-3 310W Tc N-Channel 6.5mOhm @ 75A, 10V 3V @ 250μA 4965pF @ 25V 150nC @ 10V 75A Tc 60V 4.5V 10V ±16V
RT1A060APTR RT1A060APTR ROHM Semiconductor 1.4785
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0.00000000 download 10 Weeks Surface Mount Cut Tape (CT) 2012 Not For New Designs 1 (Unlimited) 8 EAR99 ROHS3 Compliant Lead Free 8-SMD, Flat Lead not_compliant Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F8 1 SINGLE WITH BUILT-IN DIODE 600mW Ta 6A SWITCHING 0.019Ohm 12V SILICON P-Channel 19m Ω @ 6A, 4.5V 1V @ 1mA 7800pF @ 6V 80nC @ 4.5V 6A 6A Ta 12V 18A 1.5V 4.5V -8V
NTB35N15T4 NTB35N15T4 ON Semiconductor 0.0000
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0.00000000 download Tape & Reel (TR) 2005 Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant Contains Lead 37A 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn80Pb20) GULL WING 240 30 3 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 178W 2W Ta 178W Tj 37A SWITCHING 0.05Ohm 90 ns SILICON N-Channel 50m Ω @ 18.5A, 10V 4V @ 250μA 3200pF @ 25V 100nC @ 10V 125ns 120 ns 20V 150V 37A Ta 111A 700 mJ 10V ±20V
FQD30N06TF FQD30N06TF Rochester Electronics, LLC 0.0000
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0.00000000 download Tape & Reel (TR) QFET® yes Obsolete 1 (Unlimited) 2 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PSSO-G2 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.5W Ta 44W Tc SWITCHING 0.045Ohm 60V SILICON N-Channel 45m Ω @ 11.4A, 10V 4V @ 250μA 945pF @ 25V 25nC @ 10V 22.7A 22.7A Tc 60V 90.8A 280 mJ 10V ±25V
NTB5605T4G NTB5605T4G ON Semiconductor 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2010 Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G2 Other Transistors Not Qualified 1 DRAIN Single 88W 88W Tc 18.5A SWITCHING 29 ns SILICON P-Channel 140m Ω @ 8.5A, 5V 2V @ 250μA 1190pF @ 25V 22nC @ 5V 122ns 75 ns 20V -60V 18.5A Ta 60V 55A 5V ±20V
FQI5N60CTU FQI5N60CTU ON Semiconductor 0.0000
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0.00000000 download 4 Weeks ACTIVE (Last Updated: 2 weeks ago) Through Hole Tube 2013 QFET® yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 5A No FAST SWITCHING TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole 2.084g -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) R-PSIP-T3 FET General Purpose Power 1 Single 3.13W 10 ns 3.13W Ta 100W Tc 4.5A SWITCHING 38 ns SILICON N-Channel 2.5 Ω @ 2.25A, 10V 4V @ 250μA 670pF @ 25V 19nC @ 10V 42ns 46 ns 30V 600V 4.5A Tc 10V ±30V
TK22A65X5,S5X TK22A65X5,S5X Toshiba Semiconductor and Storage 5.5368
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0.00000000 12 Weeks Active 1 (Unlimited)
AUIRLR3410 AUIRLR3410 Infineon Technologies 0.0000
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0.00000000 download 39 Weeks Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 79W 7.2 ns 79W Tc 17A SWITCHING 30 ns SILICON N-Channel 105m Ω @ 10A, 10V 2V @ 250μA 800pF @ 25V 34nC @ 5V 53ns 26 ns 16V 100V 17A Tc 60A 4V 10V ±16V
AOTF14N50 AOTF14N50 Alpha & Omega Semiconductor Inc. 14.8672
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0.00000000 18 Weeks Through Hole Tube 2009 Active 1 (Unlimited) ROHS3 Compliant 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 Single 50W 50W Tc 14A N-Channel 380m Ω @ 7A, 10V 4.5V @ 250μA 2297pF @ 25V 51nC @ 10V 30V 14A Tc 500V 10V ±30V
IRF3205LPBF IRF3205LPBF Infineon Technologies 0.0000
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0.00000000 download 14 Weeks Through Hole Tube 2002 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 110A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 200W 14 ns 4V 200W Tc 110A SWITCHING 0.008Ohm 50 ns SILICON N-Channel 8m Ω @ 62A, 10V 4V @ 250μA 3247pF @ 25V 146nC @ 10V 101ns 65 ns 20V 55V 75A 110A Tc 264 mJ 10V ±20V
IRF7749L1TRPBF IRF7749L1TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 175°C -55°C ROHS3 Compliant Lead Free No 15 DirectFET™ Isometric L8 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 1 3.3W 17 ns 1.1mOhm DIRECTFET L8 3.3W Ta 125W Tc 200A 78 ns N-Channel 1.5mOhm @ 120A, 10V 4V @ 250μA 12320pF @ 25V 300nC @ 10V 43ns 39 ns 20V 60V 33A Ta 200A Tc 60V 12.32nF 10V ±20V 1.5 mΩ
IRFU210PBF IRFU210PBF Vishay Siliconix 0.0000
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0.00000000 download 8 Weeks Through Hole Tube 2016 yes Active 1 (Unlimited) 3 EAR99 6.73mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA Unknown 6.22mm 2.38mm 1.5Ohm Through Hole 329.988449mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 260 40 3 1 1 DRAIN Single 2.5W 8.2 ns 4V 2.5W Ta 25W Tc 2.6A SWITCHING 14 ns SILICON N-Channel 1.5 Ω @ 1.6A, 10V 4V @ 250μA 140pF @ 25V 8.2nC @ 10V 17ns 8.9 ns 20V 200V 2.6A Tc 95 mJ 10V ±20V
FQPF6N40C FQPF6N40C ON Semiconductor 0.0000
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0.00000000 download Tube 2003 QFET® Obsolete 1 (Unlimited) TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) TO-220F 38W Tc N-Channel 1Ohm @ 3A, 10V 4V @ 250μA 625pF @ 25V 20nC @ 10V 6A Tc 400V 10V ±30V
GP1M005A050FH GP1M005A050FH Global Power 0.0000
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0.00000000 download 12 Weeks 2014 Discontinued Non-RoHS Compliant
FDB7030L FDB7030L ON Semiconductor 0.0000
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0.00000000 download Tape & Reel (TR) 2003 PowerTrench® Obsolete 1 (Unlimited) TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -65°C~175°C TJ MOSFET (Metal Oxide) TO-263AB 68W Tc N-Channel 7mOhm @ 40A, 10V 3V @ 250μA 2440pF @ 15V 33nC @ 5V 80A Ta 30V 4.5V 10V ±20V
DN3145N8-G DN3145N8-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2008 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free No 3 TO-243AA No SVHC 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) FLAT 260 40 1 FET General Purpose Power 1 DRAIN Single 1.3W 10 ns 1.3W Ta 100mA SWITCHING 20 ns SILICON N-Channel 60 Ω @ 100mA, 0V 120pF @ 25V 15ns 15 ns 20V 450V Depletion Mode 100mA Tj 0V ±20V
IPP60R280E6XKSA1 IPP60R280E6XKSA1 Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 104W Tc SWITCHING 0.28Ohm 600V SILICON N-Channel 280m Ω @ 6.5A, 10V 3.5V @ 430μA 950pF @ 100V 43nC @ 10V 13.8A Tc 600V 40A 284 mJ 10V ±20V
PMPB95ENEA/FX PMPB95ENEA/FX Nexperia USA Inc. 0.0000
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0.00000000 download 8 Weeks Tape & Reel (TR) Automotive, AEC-Q101 Active 6 ROHS3 Compliant 6-UDFN Exposed Pad Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NO LEAD 6 YES S-PDSO-N6 AEC-Q101; IEC-60134 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.6W Ta SWITCHING 0.105Ohm 80V SILICON N-Channel 105m Ω @ 2.8A, 10V 2.7V @ 250μA 504pF @ 40V 14.9nC @ 10V 2.8A 4.1A Ta 80V 11.2A 4.5V 10V ±20V
SPD04N60C3 SPD04N60C3 Infineon Technologies 0.0000
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0.00000000 download Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 2 RoHS Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 50W Tc SWITCHING 0.95Ohm 600V SILICON N-Channel 950m Ω @ 2.8A, 10V 3.9V @ 200μA 490pF @ 25V 25nC @ 10V 4.5A 4.5A Tc 600V 13.5A 130 mJ 10V ±20V
STD5N95K3 STD5N95K3 STMicroelectronics 0.0000
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0.00000000 download 12 Weeks ACTIVE (Last Updated: 8 months ago) Surface Mount Tape & Reel (TR) SuperMESH3™ Active 1 (Unlimited) 2 EAR99 6.6mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.4mm 6.2mm 3.5Ohm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed GULL WING 260 STD5N 3 R-PSSO-G2 FET General Purpose Power 1 Single 90W 17 ns 4V 90W Tc 4A SWITCHING 32 ns SILICON N-Channel 3.5 Ω @ 2A, 10V 5V @ 100μA 460pF @ 25V 19nC @ 10V 7ns 18 ns 30V 950V 4A 4A Tc 10V ±30V
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