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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Thickness Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IRFI624G IRFI624G Vishay Siliconix 4.6876
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0.00000000 download Through Hole Tube 2009 Obsolete 1 (Unlimited) 150°C -55°C 10.63mm Non-RoHS Compliant Contains Lead 3.4A TO-220-3 Full Pack, Isolated Tab 9.8mm 4.83mm Through Hole 6.000006g -55°C~150°C TJ 200V MOSFET (Metal Oxide) 1 Single 7 ns 1.1Ohm TO-220-3 30W Tc 3.4A 20 ns N-Channel 1.1Ohm @ 2A, 10V 4V @ 250μA 260pF @ 25V 14nC @ 10V 13ns 12 ns 20V 250V 3.4A Tc 250V 260pF 10V ±20V 1.1 Ω
PMFPB8032XP,115 PMFPB8032XP,115 Nexperia USA Inc. 0.0000
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0.00000000 download 8 Weeks Tape & Reel (TR) 2012 Active 1 (Unlimited) ROHS3 Compliant Lead Free 6 6-UDFN Exposed Pad Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 6 1 Single 6 ns -20V 485mW Ta 6.25W Tc 2.7A 120 ns P-Channel 102m Ω @ 2.7A, 4.5V 1V @ 250μA 550pF @ 10V 8.6nC @ 4.5V 14ns 50 ns -600mV -20V Schottky Diode (Isolated) 2.7A Ta 20V 4.5V ±12V
RFD3055 RFD3055 ON Semiconductor 0.0000
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0.00000000 download Through Hole Tube 2002 yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Lead Free 12A TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 FET General Purpose Power Not Qualified 1 TO-252AA DRAIN Single 53W 53W Tc 12A SWITCHING 0.107Ohm 16 ns SILICON N-Channel 150m Ω @ 12A, 10V 4V @ 250μA 300pF @ 25V 23nC @ 20V 21ns 10 ns 20V 60V 11A 12A Tc 10V ±20V
IRLU7833-701PBF IRLU7833-701PBF Infineon Technologies 0.0000
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0.00000000 download Tube 2010 HEXFET® Obsolete 1 (Unlimited) TO-252-4, DPak (3 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) I-PAK (LF701) 140W Tc N-Channel 4.5mOhm @ 15A, 10V 2.3V @ 250μA 4010pF @ 15V 50nC @ 4.5V 140A Tc 30V 4.5V 10V ±20V
APTM20UM03FAG APTM20UM03FAG Microsemi 0.0000
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0.00000000 download 36 Weeks Chassis Mount, Screw Bulk 2012 POWER MOS 7® yes Active 1 (Unlimited) 2 EAR99 RoHS Compliant No 6 AVALANCHE RATED SP6 Chassis Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER UPPER UNSPECIFIED 2 R-PUFM-X2 1 SINGLE WITH BUILT-IN DIODE 2.27kW 32 ns 2270W Tc 580A 200V 88 ns SILICON N-Channel 3.6m Ω @ 290A, 10V 5V @ 15mA 43300pF @ 25V 840nC @ 10V 64ns 116 ns 30V 580A Tc 200V 2320A 3000 mJ 10V ±30V
FQP16N25 FQP16N25 ON Semiconductor 0.0000
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0.00000000 download 5 Weeks ACTIVE (Last Updated: 2 days ago) Through Hole Tube 2013 QFET® yes Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free 16A 3 TO-220-3 16.3mm 4.7mm Through Hole 1.8g -55°C~150°C TJ 250V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 TO-220AB Single 50W 17 ns 142W Tc 16A SWITCHING 45 ns SILICON N-Channel 230m Ω @ 8A, 10V 5V @ 250μA 1200pF @ 25V 35nC @ 10V 140ns 75 ns 30V 250V 16A Tc 64A 560 mJ 10V ±30V
MTP2P50E MTP2P50E ON Semiconductor 0.0000
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0.00000000 download LAST SHIPMENTS (Last Updated: 5 days ago) Through Hole Tube 2000 no Obsolete 1 (Unlimited) 3 EAR99 10.28mm Non-RoHS Compliant Contains Lead -2A 3 HIGH VOLTAGE TO-220-3 not_compliant 9.28mm 4.82mm Through Hole -55°C~150°C TJ -500V MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) 240 30 3 Other Transistors Not Qualified 1 TO-220AB DRAIN Single 75W 12 ns 75W Tc 2A SWITCHING 6Ohm 21 ns SILICON P-Channel 6 Ω @ 1A, 10V 4V @ 250μA 1183pF @ 25V 27nC @ 10V 14ns 19 ns 20V -500V 2A 2A Tc 500V 6A 80 mJ 10V ±20V
STF8N65M5 STF8N65M5 STMicroelectronics 0.0000
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0.00000000 download 17 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Tube MDmesh™ V Active 1 (Unlimited) 150°C -55°C 10.4mm ROHS3 Compliant Lead Free Tin No 3 TO-220-3 Full Pack No SVHC 16.4mm 4.6mm 600MOhm Through Hole 150°C TJ MOSFET (Metal Oxide) STF8N 1 Single 25W 50 ns 4V 560mOhm TO-220FP 25W Tc 7A 20 ns N-Channel 600mOhm @ 3.5A, 10V 5V @ 250μA 690pF @ 100V 15nC @ 10V 14ns 11 ns 25V 650V 7A Tc 650V 690pF 10V ±25V 600 mΩ
SIRA20DP-T1-RE3 SIRA20DP-T1-RE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Tape & Reel (TR) 2017 TrenchFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant PowerPAK® SO-8 unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 6.25W Ta 104W Tc N-Channel 0.58m Ω @ 20A, 10V 2.1V @ 250μA 10850pF @ 10V 200nC @ 10V 81.7A Ta 100A Tc 25V 4.5V 10V +16V, -12V
IRLR8103 IRLR8103 Infineon Technologies 0.0000
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0.00000000 download Tube HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 89W Ta SWITCHING 0.0085Ohm 30V SILICON N-Channel 7m Ω @ 15A, 10V 2V @ 250μA (Min) 50nC @ 5V 89A 89A Ta 30V 350A 4.5V 10V ±20V
IRF9Z14SPBF IRF9Z14SPBF Vishay Siliconix 0.0000
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0.00000000 download 8 Weeks Surface Mount, Through Hole Tube 2014 Active 1 (Unlimited) 175°C -55°C 10.67mm ROHS3 Compliant Lead Free -6.7A 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.83mm 9.65mm 500mOhm Surface Mount 1.437803g -55°C~175°C TJ -60V MOSFET (Metal Oxide) 1 1 Single 3.7W 11 ns 500mOhm D2PAK 3.7W Ta 43W Tc -6.7A 10 ns P-Channel 500mOhm @ 4A, 10V 4V @ 250μA 270pF @ 25V 12nC @ 10V 63ns 31 ns 20V -60V 60V -4 V 6.7A Tc 60V 270pF 10V ±20V 500 mΩ
IRL3103D1S IRL3103D1S Infineon Technologies 0.0000
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0.00000000 Tube 1998 FETKY™ Obsolete 1 (Unlimited) Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 3.1W Ta 89W Tc N-Channel 14m Ω @ 34A, 10V 1V @ 250μA 1900pF @ 25V 43nC @ 4.5V 64A Tc 30V 4.5V 10V ±16V
R6008FNX R6008FNX ROHM Semiconductor 3.5030
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0.00000000 10 Weeks Through Hole Bulk 2012 yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 260 10 3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-220AB 20 ns 50W Tc 8A SWITCHING 0.95Ohm 600V 60 ns SILICON N-Channel 950m Ω @ 4A, 10V 4V @ 1mA 580pF @ 25V 20nC @ 10V 25ns 30 ns 30V 8A 8A Tc 600V 10V ±30V
IRF3315L IRF3315L Infineon Technologies 0.0000
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0.00000000 Tube 1997 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) TO-262 3.8W Ta 94W Tc N-Channel 82mOhm @ 12A, 10V 4V @ 250μA 1300pF @ 25V 95nC @ 10V 21A Tc 150V 10V ±20V
IRLR2703PBF IRLR2703PBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Lead Free 23A No 3 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm 45mOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 38W 8.5 ns 1V 45W Tc 97 ns 23A SWITCHING 12 ns SILICON N-Channel 45m Ω @ 14A, 10V 1V @ 250μA 450pF @ 25V 15nC @ 4.5V 140ns 20 ns 16V 30V 30V 1 V 23A Tc 96A 77 mJ 4V 10V ±16V
IRLML6246TRPBF IRLML6246TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 3 EAR99 3.0226mm ROHS3 Compliant Lead Free No 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.016mm 1.397mm 46MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING FET General Purpose Power 1 Single 1.3W 3.6 ns 12V 1.3W Ta 13 ns 4.1A SWITCHING 11 ns SILICON N-Channel 46m Ω @ 4.1A, 4.5V 1.1V @ 5μA 290pF @ 16V 3.5nC @ 4.5V 4.9ns 6 ns 12V 20V 4.1A Ta 2.5V 4.5V ±12V
NTB52N10 NTB52N10 Rochester Electronics, LLC 0.0000
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0.00000000 download no Obsolete 1 (Unlimited) 2 Non-RoHS Compliant ENHANCEMENT MODE e0 TIN LEAD SINGLE GULL WING 235 NOT SPECIFIED 3 YES R-PSSO-G2 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE DRAIN N-CHANNEL SWITCHING 0.03Ohm 100V METAL-OXIDE SEMICONDUCTOR SILICON 52A 156A 800 mJ
STP23NM60N STP23NM60N STMicroelectronics 0.0000
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0.00000000 download Through Hole Tube MDmesh™ II yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-220-3 not_compliant Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED STP23N 3 FET General Purpose Power Not Qualified 1 TO-220AB Single 35W 150W Tc 9.5A SWITCHING 0.18Ohm 90 ns SILICON N-Channel 180m Ω @ 9.5A, 10V 4V @ 250μA 2050pF @ 50V 60nC @ 10V 15ns 36 ns 25V 600V 19A 19A Tc 76A 700 mJ 10V ±25V
CSD19505KCS CSD19505KCS 0.0000
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0.00000000 12 Weeks ACTIVE (Last Updated: 1 day ago) Through Hole Tube NexFET™ yes Active 1 (Unlimited) 3 EAR99 10.16mm ROHS3 Compliant Lead Free Tin 3 AVALANCHE RATED TO-220-3 No SVHC not_compliant 4.7mm 8.7mm 4.58mm Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 NOT SPECIFIED NOT SPECIFIED CSD19505 1 1 DRAIN Single 300W 31 ns 2.6V 300W Tc 150A SWITCHING 62 ns SILICON N-Channel 3.8m Ω @ 100A, 6V 3.2V @ 250μA 7820pF @ 40V 76nC @ 10V 16ns 6 ns 20V 80V 150A Ta 400A 6V 10V ±20V
2SK2713 2SK2713 ROHM Semiconductor 0.0000
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0.00000000 download Through Hole Bulk 1998 Obsolete 1 (Unlimited) 3 ROHS3 Compliant Lead Free 5A TO-220-3 Full Pack Through Hole 150°C TJ 450V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER SINGLE 260 10 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE TO-220AB ISOLATED 30W Tc 5A SWITCHING SILICON N-Channel 1.4 Ω @ 2.5A, 10V 4V @ 1mA 600pF @ 10V 17ns 5A 5A Ta 20A 10V ±30V
NTMS4P01R2 NTMS4P01R2 ON Semiconductor 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant Contains Lead -4.5A 8-SOIC (0.154, 3.90mm Width) not_compliant Surface Mount -55°C~150°C TJ -12V MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) DUAL GULL WING 240 30 8 R-PDSO-G8 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE 790mW Ta 3.4A SWITCHING 0.045Ohm SILICON P-Channel 45m Ω @ 4.5A, 4.5V 1.15V @ 250μA 1850pF @ 9.6V 35nC @ 4.5V 2.32A 3.4A Ta 12V 400 pF 2.5V 4.5V ±10V
SI3469DV-T1-GE3 SI3469DV-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2016 TrenchFET® yes Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant No 6 SOT-23-6 Thin, TSOT-23-6 Unknown Surface Mount 19.986414mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 6 1 Other Transistors 1 Single 1.14W 10 ns -1V 1.14W Ta -6.7A SWITCHING 0.03Ohm 50 ns SILICON P-Channel 30m Ω @ 6.7A, 10V 3V @ 250μA 30nC @ 10V 12ns 35 ns 20V -20V -1 V 5A 5A Ta 4.5V 10V ±20V
DMN2005K-7 DMN2005K-7 Diodes Incorporated 0.3144
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2014 yes Active 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant No 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1mm 1.3mm Surface Mount 7.994566mg -65°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 40 3 1 FET General Purpose Powers 1 Single 350mW 350mW Ta 300mA SWITCHING SILICON N-Channel 1.7 Ω @ 200mA, 2.7V 900mV @ 100μA 10V 20V 300mA Ta 1.8V 2.7V ±10V
2N6660-E3 2N6660-E3 Vishay Siliconix 0.0000
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0.00000000 download 9 Weeks Through Hole Bulk 2007 yes Obsolete 1 (Unlimited) 3 EAR99 9.4mm ROHS3 Compliant Tin No 3 LOW THRESHOLD TO-205AD, TO-39-3 Metal Can Unknown 6.6mm 8.15mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 BOTTOM WIRE 260 40 2 1 FET General Purpose Powers 1 Single 725mW 1.7V 725mW Ta 6.25W Tc 1.1A AMPLIFIER 3Ohm SILICON N-Channel 3 Ω @ 1A, 10V 2V @ 1mA 50pF @ 25V 20V 60V 1.7 V 0.99A 990mA Tc 5V 10V ±20V
SUM50N06-16L-E3 SUM50N06-16L-E3 Vishay Siliconix 5.3423
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0.00000000 download Surface Mount Cut Tape (CT) 2007 TrenchFET® Obsolete 1 (Unlimited) 175°C -55°C ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 16mOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) Single 10 ns 2V 16mOhm TO-263 (D2Pak) 3.7W Ta 93W Tc 50A 25 ns N-Channel 16mOhm @ 20A, 10V 3V @ 250μA 1325pF @ 25V 40nC @ 10V 9ns 7 ns 20V 50A Tc 60V 1.325nF 16 mΩ
FDAF59N30 FDAF59N30 ON Semiconductor 0.0000
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0.00000000 download Tube 2006 UniFET™ Obsolete 1 (Unlimited) TO-3P-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) TO-3PF 161W Tc N-Channel 56mOhm @ 17A, 10V 5V @ 250μA 4670pF @ 25V 100nC @ 10V 34A Tc 300V 10V ±30V
NTB65N02R NTB65N02R ON Semiconductor 0.0000
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0.00000000 download Surface Mount Tube 2009 Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant Contains Lead 65A TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ 25V MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e0 Tin/Lead (Sn/Pb) GULL WING 235 NOT SPECIFIED 3 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 62.5W 1.04W Ta 62.5W Tc 65A SWITCHING 0.0105Ohm 14 ns SILICON N-Channel 8.2m Ω @ 30A, 10V 2V @ 250μA 1330pF @ 20V 9.5nC @ 4.5V 20V 24V 7.6A 65A Tc 160A 60 mJ 4.5V 10V ±20V
IXFX210N17T IXFX210N17T IXYS 0.0000
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0.00000000 download Through Hole Tube 2009 GigaMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED TO-247-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1150W Tc 210A SWITCHING 0.0075Ohm 170V SILICON N-Channel 7.5m Ω @ 60A, 10V 5V @ 4mA 18800pF @ 25V 285nC @ 10V 210A Tc 170V 580A 2000 mJ 10V ±20V
IRF3706S IRF3706S Infineon Technologies 0.0000
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0.00000000 Tube 2004 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 88W Tc N-Channel 8.5m Ω @ 15A, 10V 2V @ 250μA 2410pF @ 10V 35nC @ 4.5V 77A Tc 20V 2.8V 10V ±12V
IRF1010EPBF IRF1010EPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free Tin 84A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-220-3 No SVHC 2.54mm 16.51mm 4.826mm 12mOhm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 170W 12 ns 4V 200W Tc 84A SWITCHING 48 ns SILICON N-Channel 12m Ω @ 50A, 10V 4V @ 250μA 3210pF @ 25V 130nC @ 10V 78ns 53 ns 20V 60V 60V 4 V 75A 84A Tc 10V ±20V
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