Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Ambient Temperature Range High | Halogen Free | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
.png "IS43R32800D-5B") |
IS43R32800D-5B | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | 144 | EAR99 | 1 | 12mm | ROHS3 Compliant | AUTO/SELF REFRESH | 144-LFBGA | 12mm | Surface Mount | 0°C~70°C TA | SDRAM - DDR | SYNCHRONOUS | 1.4mm | 8542.32.00.24 | 1 | BOTTOM | 2.5V | 144 | YES | 0.8mm | S-PBGA-B144 | 2.3V | Not Qualified | 2.5V | 2.7V | 3-STATE | 700ps | 256Mb 8M x 32 | Volatile | 0.48mA | 2.3V~2.7V | 8MX32 | 32 | 268435456 bit | 200MHz | 0.005A | COMMON | 4096 | DRAM | Parallel | 15ns | 248 | 248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL128S90TFI013 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tape & Reel (TR) | 2003 | GL-S | Active | 3 (168 Hours) | 56 | 3A991.B.1.A | 18.4mm | ROHS3 Compliant | 56-TFSOP (0.724, 18.40mm Width) | 14mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | DUAL | 260 | 3V | NOT SPECIFIED | YES | 0.5mm | R-PDSO-G56 | 2.7V | Not Qualified | 3/3.3V | 3.6V | 90ns | 128Mb 8M x 16 | Non-Volatile | 0.08mA | 2.7V~3.6V | 16MX8 | 8 | 134217728 bit | 0.0001A | 3V | YES | YES | YES | 128 | 16words | YES | YES | FLASH | Parallel | 60ns | 64K | BOTTOM/TOP | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V67703S75BGGI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 119-BGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | IDT71V67703 | 119-PBGA (14x22) | 7.5ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 117MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC04BH-E/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2008 | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 4.9mm | ROHS3 Compliant | Tin | 8 | 8-SOIC (0.154, 3.90mm Width) | I2C, Serial | 4 kb | 3.9mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.75mm | 1 | 3mA | e3 | DUAL | 260 | 40 | 24LC04BH | 8 | 1.27mm | Not Qualified | 900ns | 4Kb 256 x 8 x 2 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010XXMR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F64G08CBCABH1-12Z:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tube | 2011 | yes | Active | 3 (168 Hours) | 100 | 3A991.B.1.A | 3.3V | 18mm | ROHS3 Compliant | 100 | 100-VBGA | 12mm | Surface Mount | 0°C~70°C TA | FLASH - NAND | SYNCHRONOUS | 1mm | 8542.32.00.51 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3.3V | 30 | 100 | YES | 1mm | 2.7V | 3.6V | 64Gb 8G x 8 | Non-Volatile | 2.7V~3.6V | 8GX8 | 8 | 68719476736 bit | 83MHz | 2.7V | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28C010-12FM/883 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 23 Weeks | Surface Mount | Tube | 2003 | yes | Active | 3 (168 Hours) | 32 | 5V | 20.85mm | ROHS3 Compliant | Contains Lead | Lead, Tin | 32 | AUTOMATIC WRITE; DATA RETENTION: 10 YEARS | 32-CFlatpack | 1 Mb | 120GHz | 12.2mm | Surface Mount | -55°C~125°C TC | CMOS | ASYNCHRONOUS | 3.05mm | 1 | 80mA | e0 | Tin/Lead (Sn/Pb) | DUAL | 240 | 5V | 30 | AT28C010 | 1.27mm | Not Qualified | 5V | 3-STATE | 120ns | MIL-STD-883 | 1Mb 128K x 8 | Non-Volatile | 4.5V~5.5V | 128KX8 | 8 | 0.0003A | 10000 Write/Erase Cycles | 10ms | 5V | YES | YES | NO | 128words | EEPROM | Parallel | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FS256SAGMFM000 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tray | Automotive, AEC-Q100, FS-S | Active | 3 (168 Hours) | ROHS3 Compliant | 16-SOIC (0.295, 7.50mm Width) | Surface Mount | -40°C~125°C TA | FLASH - NOR | 8542.32.00.51 | 256Mb 32M x 8 | Non-Volatile | 1.7V~2V | 133MHz | FLASH | SPI - Quad I/O, QPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3559S80BQG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V3559 | 165-CABGA (13x15) | 8ns | 4.5Mb 256K x 18 | Volatile | 3.135V~3.465V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V07L35PFGI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 80-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT70V07 | 80-TQFP | 35ns | 256Kb 32K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3556S166BGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | 3 (168 Hours) | 119 | 3A991.B.2.A | 85°C | -40°C | 22mm | Non-RoHS Compliant | BGA | Parallel | not_compliant | 166MHz | 14mm | CMOS | SYNCHRONOUS | 2.36mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 119 | INDUSTRIAL | YES | 1.27mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.36mA | 128KX36 | 36 | 4718592 bit | 0.045A | 3.5 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CAT24C03LI-G | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Through Hole | Tube | 2008 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5V | 9.27mm | RoHS Compliant | Lead Free | Gold | No | 8 | 8-DIP (0.300, 7.62mm) | 2-Wire, I2C, Serial | 2 kb | 7.62mm | Through Hole | -40°C~85°C TA | CMOS | 5.33mm | 1 | 1mA | e4 | DUAL | 3.3V | CAT24C03 | 8 | 2.54mm | Halogen Free | 900ns | 2Kb 256 x 8 | Non-Volatile | 1.8V~5.5V | 8 | 400kHz | 0.000001A | 100 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V016SA15PH | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2007 | no | 3 (168 Hours) | 44 | 3A991.B.2.B | 70°C | 0°C | 1 | 18.41mm | RoHS Compliant | ALSO OPERATES WITH 3V TO 3.6 V SUPPLY | TSOP | Parallel | 10.16mm | CMOS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | GULL WING | 225 | 3.3V | 20 | 44 | COMMERCIAL | YES | 0.8mm | R-PDSO-G44 | 3.15V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.13mA | 64KX16 | 16 | 1048576 bit | 0.01A | 15 ns | YES | COMMON | 3.15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V9369L7PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 3.6V | 3V | 288 kb | 45.45MHz | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 290mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | 0.65mm | SRAMs | 3-STATE | 18 ns | RAM, SRAM | 14b | 16KX18 | Synchronous | 0.005A | 18b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71342LA55PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | TQFP | Parallel | 5.5V | 4.5V | 32 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 200mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 64 | COMMERCIAL | 0.8mm | SRAMs | 5V | 3-STATE | 55 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
X28HC256JIZ-12T1 | Intersil (Renesas Electronics America) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 21 Weeks | 2005 | Active | 85°C | -40°C | 5V | RoHS Compliant | No | 32 | PLCC | Parallel | 256 kb | 120 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V321L35PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | BATTERY BACKUP;AUTOMATIC POWER DOWN | TQFP | Parallel | 3.6V | 3V | 16 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 95mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 64 | COMMERCIAL | 0.8mm | SRAMs | 3-STATE | 35 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS62WV5128BLL-55HLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | yes | Active | 2 (1 Year) | 32 | 3.3V | 1 | ROHS3 Compliant | Lead Free | No | 32 | 32-TFSOP (0.465, 11.80mm Width) | 4 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | 45mA | e3 | Matte Tin (Sn) | DUAL | 260 | 2.8V | 40 | 32 | 0.5mm | 2.5V | 3.6V | 4Mb 512K x 8 | Volatile | 19b | 2.5V~3.6V | 8 | Asynchronous | 55 ns | 8b | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7027S25PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 5.5V | 4.5V | 512 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 305mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 25 ns | 64kB | RAM, SDR, SRAM | 30b | Asynchronous | 0.005A | 16b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
71V016SA20BF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2011 | Active | 70°C | 0°C | 3.3V | 1 | 7mm | RoHS Compliant | Contains Lead | No | 48 | Parallel | 3.6V | 3V | 1 Mb | 7mm | 1.4mm | 120mA | 20 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 16b | Asynchronous | 16b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V016SA12PHI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2007 | 3 (168 Hours) | 44 | 3A991.B.2.B | 85°C | -40°C | 18.41mm | Non-RoHS Compliant | TSOP | Parallel | not_compliant | 10.16mm | CMOS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | GULL WING | 225 | 3.3V | 20 | 44 | INDUSTRIAL | YES | 0.8mm | R-PDSO-G44 | 3V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.16mA | 64KX16 | 16 | 1048576 bit | 0.01A | 12 ns | COMMON | 3.15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3559S80BG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 119 | 70°C | 0°C | 3.3V | 1 | 14mm | RoHS Compliant | Contains Lead | No | 119 | BGA | Parallel | 3.465V | 3.135V | 4.5 Mb | 95MHz | 22mm | 2.15mm | CMOS | 250mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 119 | COMMERCIAL | SRAMs | 3-STATE | 8 ns | 100MHz | 512kB | RAM, SDR, SRAM | 18b | Synchronous | 0.04A | 18b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W25Q64JVSSIQ | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Tube | 2016 | SpiFlash® | Active | 3 (168 Hours) | 8 | 3A991.B.1.A | 3V | 5.23mm | ROHS3 Compliant | 8 | 8-SOIC (0.209, 5.30mm Width) | SPI | 512 Mb | 2.16mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3V | 30 | 1.27mm | 2.7V | 3.6V | 85°C | 6 ns | 64Mb 8M x 8 | Non-Volatile | 24b | 2.7V~3.6V | 64MX1 | 1 | SERIAL | 133MHz | 2.7V | 256B | FLASH | SPI - Quad I/O | 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61WV204816ALL-10BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | 48 | 8mm | ROHS3 Compliant | 48-TFBGA | 6mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.75mm | R-PBGA-B48 | 1.65V | 2.2V | 32Mb 2M x 16 | Volatile | 1.65V~2.2V | 2MX16 | 16 | 33554432 bit | 10 ns | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71T75702S80PFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71T75 | 8ns | 18Mb 512K x 36 | Volatile | 2.375V~2.625V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S34ML04G100TFI003 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 99 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | ML-1 | Discontinued | 3 (168 Hours) | 48 | 3.3V | 18.4mm | ROHS3 Compliant | No | 48 | 48-TFSOP (0.724, 18.40mm Width) | 4 Gb | Surface Mount | -40°C~85°C TA | FLASH - NAND | 1.2mm | 8542.32.00.51 | 1 | 30mA | e3 | Matte Tin (Sn) | DUAL | 3.3V | 0.5mm | 2.7V | 3.6V | 20 ns | 4Gb 512M x 8 | Non-Volatile | 30b | 2.7V~3.6V | 512MX8 | 8 | Asynchronous | 8b | 0.00005A | 8b | 3V | NO | NO | YES | 4K | 2kB | YES | FLASH | Parallel | 25ns | 128K | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BQ4010YMA-70 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 28-DIP Module (0.61, 15.49mm) | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 28-DIP Module (18.42x37.72) | 70ns | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | NVSRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28BV256-20JU | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tube | 1997 | yes | Active | 2 (1 Year) | 32 | 3.3V | 13.97mm | ROHS3 Compliant | Lead Free | No | 32 | 32-LCC (J-Lead) | Parallel, SPI | No SVHC | 256 kb | 200GHz | 11.43mm | Surface Mount | -40°C~85°C TC | CMOS | 3.556mm | 1 | 15mA | e3 | Matte Tin (Sn) - annealed | QUAD | 245 | 3V | 40 | AT28BV256 | 1.27mm | 2.7V | 3.6V | 200ns | 256Kb 32K x 8 | Non-Volatile | 2.7V~3.6V | 8 | 0.00002A | 10 | 10000 Write/Erase Cycles | HARDWARE/SOFTWARE | 10ms | 3V | YES | YES | 64words | EEPROM | Parallel | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7005S25J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2005 | no | Active | 1 (Unlimited) | 68 | EAR99 | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | PLCC | Parallel | 5.5V | 4.5V | 64 kb | 24mm | 3.63mm | CMOS | 1 | 265mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 68 | COMMERCIAL | SRAMs | 5V | 3-STATE | 25 ns | 8kB | RAM, SDR, SRAM | 26b | 8KX8 | Asynchronous | 0.015A | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS63LV1024-8KL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | yes | Active | 2 (1 Year) | 32 | 3.3V | 1 | 20.95mm | Non-RoHS Compliant | No | 32 | 32-BSOJ (0.400, 10.16mm Width) | 1 Mb | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 3.75mm | 1 | 160mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3.3V | 40 | 32 | 3V | 3.6V | 3-STATE | 1Mb 128K x 8 | Volatile | 17b | 3V~3.6V | 8 | Asynchronous | 8 ns | 8b | COMMON | 2V | SRAM | Parallel | 8ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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24AA024T-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 3 (168 Hours) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | I2C, Serial | 2 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 3mA | e3 | DUAL | 260 | 2.5V | 40 | 24AA024 | 8 | 1.27mm | 1.7V | 2/5V | 5.5V | 900ns | 2Kb 256 x 8 | Non-Volatile | 1.7V~5.5V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms |
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