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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Operating Temperature (Min) Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IRFSL3206PBF IRFSL3206PBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 210A No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.65mm 4.826mm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W 19 ns 300W Tc 120A SWITCHING 55 ns SILICON N-Channel 3m Ω @ 75A, 10V 4V @ 150μA 6540pF @ 50V 170nC @ 10V 82ns 83 ns 20V 60V 120A Tc 840A 10V ±20V
NVMFS6D1N08HT1G NVMFS6D1N08HT1G ON Semiconductor 0.0000
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0.00000000 download 4 Weeks Tape & Reel (TR) yes Active 1 (Unlimited) Non-RoHS Compliant 8-PowerTDFN, 5 Leads not_compliant Surface Mount e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED
IXFN39N90 IXFN39N90 IXYS 0.0000
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0.00000000 download 8 Weeks Chassis Mount Tube 2001 HiPerFET™ yes Obsolete 1 (Unlimited) 4 RoHS Compliant 4 AVALANCHE RATED SOT-227-4, miniBLOC Chassis Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Nickel (Ni) UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 700W 694W Tc 39A SWITCHING 0.2Ohm 125 ns SILICON N-Channel 220m Ω @ 500mA, 10V 5V @ 8mA 9200pF @ 25V 390nC @ 10V 68ns 30 ns 20V 900V 39A Tc 10V ±20V
2SJ162-E 2SJ162-E Renesas Electronics America 0.0000
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0.00000000 download Through Hole Tube 1999 yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free -7A No 3 TO-3P-3, SC-65-3 Through Hole 150°C TJ -160V MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 4 Other Transistors 1 SINGLE WITH BUILT-IN DIODE SOURCE 100W Tc 7A SWITCHING SILICON P-Channel 900pF @ 10V 15V 7A 7A Ta 160V 10V ±15V
DMP31D7LW-13 DMP31D7LW-13 Diodes Incorporated 0.0000
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0.00000000 23 Weeks Tape & Reel (TR) Active 1 (Unlimited) ROHS3 Compliant
FQP16N15 FQP16N15 Rochester Electronics 0.0000
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0.00000000 download Tube QFET® yes Obsolete 1 (Unlimited) 3 ROHS3 Compliant TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE NOT APPLICABLE NOT APPLICABLE 3 NO R-PSFM-T3 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE TO-220AB 108W Tc SWITCHING 0.16Ohm 150V SILICON N-Channel 160m Ω @ 8.2A, 10V 4V @ 250μA 910pF @ 25V 30nC @ 10V 16.4A 16.4A Tc 150V 65.6A 230 mJ 10V ±25V
FQA24N50_F109 FQA24N50_F109 ON Semiconductor 0.0000
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0.00000000 download Tube 2000 FRFET® Obsolete 1 (Unlimited) TO-3P-3, SC-65-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) TO-3P 290W Tc N-Channel 200mOhm @ 12A, 10V 5V @ 250μA 4500pF @ 25V 120nC @ 10V 24A Tc 500V 10V ±30V
IRL530L IRL530L Vishay Siliconix 0.0000
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0.00000000 download Through Hole Tube 1997 Active 1 (Unlimited) Non-RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 88W TO-262-3 15A N-Channel 160mOhm @ 9A, 5V 2V @ 250μA 930pF @ 25V 28nC @ 5V 15A Tc 100V 930pF 4V 5V ±10V 160 mΩ
GWS4618L GWS4618L Renesas Electronics America Inc. 0.0000
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0.00000000 Obsolete 3 (168 Hours) ROHS3 Compliant
ZXMN2A01E6TC ZXMN2A01E6TC Diodes Incorporated 0.0000
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0.00000000 download Tape & Reel (TR) 2012 Obsolete 1 (Unlimited) 6 EAR99 RoHS Compliant LOW THRESHOLD SOT-23-6 compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL GULL WING 260 40 6 YES R-PDSO-G6 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 1.1W Ta SWITCHING 0.12Ohm 20V SILICON N-Channel 120m Ω @ 4A, 4.5V 700mV @ 250μA 303pF @ 15V 3nC @ 4.5V 2.5A 2.5A Ta 20V 2.5V 4.5V ±12V
FQPF4N80 FQPF4N80 ON Semiconductor 0.0000
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0.00000000 download Through Hole Tube 2000 QFET® Obsolete 1 (Unlimited) RoHS Compliant Lead Free 2.2A 3 TO-220-3 Full Pack No SVHC Through Hole -55°C~150°C TJ 800V MOSFET (Metal Oxide) Single 43W 5V 43W Tc 2.2A 35 ns N-Channel 3.6 Ω @ 1.1A, 10V 5V @ 250μA 880pF @ 25V 25nC @ 10V 45ns 35 ns 30V 800V 2.2A Tc 10V ±30V
IRF6794MTR1PBF IRF6794MTR1PBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2010 HEXFET® Obsolete 3 (168 Hours) 150°C -40°C 6.35mm RoHS Compliant No 5 DirectFET™ Isometric MX No SVHC 506μm 5.05mm 1.3mOhm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) 100W 15 ns 3mOhm DIRECTFET™ MX 2.8W Ta 100W Tc 32A 9.7 ns N-Channel 1.7mOhm @ 32A, 10V 2.35V @ 100μA 4420pF @ 13V 47nC @ 4.5V 25ns 9.6 ns 20V 25V Schottky Diode (Body) 1.8 V 32A Ta 200A Tc 25V 4.42nF 4.5V 10V ±20V 1.7 mΩ
SSM3K127TU,LF SSM3K127TU,LF Toshiba Semiconductor and Storage 0.3170
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) Non-RoHS Compliant 3-SMD, Flat Lead Surface Mount 150°C MOSFET (Metal Oxide) 500mW Ta N-Channel 123m Ω @ 1A, 4V 1V @ 1mA 123pF @ 15V 1.5nC @ 4V 2A Ta 30V 1.8V 4V ±12V
RXH070N03TB1 RXH070N03TB1 ROHM Semiconductor 1.2248
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0.00000000 16 Weeks Cut Tape (CT) Active 1 (Unlimited) ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1.4W Ta N-Channel 28m Ω @ 7A, 10V 2.5V @ 1mA 390pF @ 10V 5.8nC @ 5V 7A Ta 30V 4V 10V ±20V
STB47N60DM6AG STB47N60DM6AG STMicroelectronics 0.0000
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0.00000000 16 Weeks Tape & Reel (TR) Active 1 (Unlimited) 2 RoHS Compliant AVALANCE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB compliant Surface Mount ENHANCEMENT MODE SINGLE GULL WING STB47N NO R-PSSO-G2 150°C -55°C AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN N-CHANNEL 250W SWITCHING 0.08Ohm 600V METAL-OXIDE SEMICONDUCTOR SILICON 36A 137A 700 mJ
FQD8P10TF FQD8P10TF ON Semiconductor 0.0000
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0.00000000 Tape & Reel (TR) 2016 QFET® Obsolete 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) D-Pak 2.5W Ta 44W Tc P-Channel 530mOhm @ 3.3A, 10V 4V @ 250μA 470pF @ 25V 15nC @ 10V 6.6A Tc 100V 10V ±30V
IRL3715ZCLPBF IRL3715ZCLPBF Infineon Technologies 0.0000
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0.00000000 Tube 2004 HEXFET® Obsolete 1 (Unlimited) TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) TO-262 45W Tc N-Channel 11mOhm @ 15A, 10V 2.55V @ 250μA 870pF @ 10V 11nC @ 4.5V 50A Tc 20V 4.5V 10V ±20V
FQP12N60C FQP12N60C ON Semiconductor 0.0000
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0.00000000 download 6 Weeks ACTIVE, NOT REC (Last Updated: 2 days ago) Through Hole Tube QFET® yes Not For New Designs 1 (Unlimited) 3 Through Hole EAR99 10.1mm ROHS3 Compliant Lead Free 12A 3 TO-220-3 No SVHC 9.4mm 4.7mm 650mOhm Through Hole 1.8g -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED Not Qualified 1 TO-220AB Single 225W 30 ns 4V 225W Tc 12A SWITCHING 155 ns SILICON N-Channel 650m Ω @ 6A, 10V 4V @ 250μA 2290pF @ 25V 63nC @ 10V 85ns 90 ns 30V 600V 600V 4 V 12A Tc 48A 870 mJ 10V ±30V
APT6029BLLG APT6029BLLG Microsemi Corporation 0.0000
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0.00000000 download 5 Weeks IN PRODUCTION (Last Updated: 4 weeks ago) Through Hole Tube 1997 POWER MOS 7® Active 1 (Unlimited) 150°C -55°C RoHS Compliant Lead Free 21A No TO-247-3 Through Hole -55°C~150°C TJ 600V MOSFET (Metal Oxide) 1 300W 9 ns TO-247 [B] 300W Tc 21A 23 ns N-Channel 290mOhm @ 10.5A, 10V 5V @ 1mA 2615pF @ 25V 65nC @ 10V 5ns 4 ns 30V 21A Tc 600V 2.615nF 290 mΩ
FMD15-06KC5 FMD15-06KC5 IXYS / Littelfuse 0.0000
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0.00000000 download 32 Weeks Through Hole Tube 2009 CoolMOS™ yes Active 1 (Unlimited) 5 ROHS3 Compliant HIGH RELIABILITY, UL RECOGNIZED ISOPLUSi5-Pak™ Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE NOT SPECIFIED NOT SPECIFIED 5 R-PSIP-T5 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 15A SWITCHING 0.165Ohm 600V SILICON N-Channel 165m Ω @ 12A, 10V 3.5V @ 790μA 2000pF @ 100V 52nC @ 10V 15A Tc 600V 522 mJ 10V ±20V
HTNFET-DC HTNFET-DC Honeywell Aerospace 0.0000
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0.00000000 download 8 Weeks Through Hole Bulk 2004 HTMOS™ Active 1 (Unlimited) RoHS Compliant 8-CDIP Exposed Pad Through Hole MOSFET (Metal Oxide) 50W Tj N-Channel 400m Ω @ 100mA, 5V 2.4V @ 100μA 290pF @ 28V 4.3nC @ 5V 55V 5V 10V
IRFS3607TRLPBF IRFS3607TRLPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 140W 16 ns 140W Tc 80A SWITCHING 0.009Ohm 43 ns SILICON N-Channel 9m Ω @ 46A, 10V 4V @ 100μA 3070pF @ 50V 84nC @ 10V 110ns 96 ns 20V 75V 80A Tc 10V ±20V
R6012FNX R6012FNX ROHM Semiconductor 18.9362
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0.00000000 10 Weeks Through Hole Bulk 2013 Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 30 ns 50W Tc 12A SWITCHING 0.51Ohm 600V 77 ns SILICON N-Channel 510m Ω @ 6A, 10V 5V @ 1mA 1300pF @ 25V 35nC @ 10V 37ns 20 ns 30V 12A Tc 600V 48A 9.6 mJ 10V ±30V
TK13E25D,S1X(S TK13E25D,S1X(S Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2009 Active 1 (Unlimited) RoHS Compliant No 3 TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power Single 102W Tc 13A N-Channel 250m Ω @ 6.5A, 10V 3.5V @ 1mA 1100pF @ 100V 25nC @ 10V 40ns 20 ns 20V 13A Ta 250V 10V ±20V
NTD4855NT4G NTD4855NT4G Rochester Electronics 0.0000
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0.00000000 download Tape & Reel (TR) yes Obsolete 1 (Unlimited) 2 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PSSO-G2 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.35W Ta 66.7W Tc SWITCHING 0.006Ohm 25V SILICON N-Channel 4.3m Ω @ 30A, 10V 2.5V @ 250μA 2.95pF @ 12V 32.7nC @ 4.5V 14A 14A Ta 98A Tc 25V 197A 220 mJ 4.5V 10V ±20V
IRF3314STRL IRF3314STRL Vishay Siliconix 0.0000
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0.00000000 Surface Mount Tape & Reel (TR) Discontinued 1 (Unlimited) Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount MOSFET (Metal Oxide) N-Channel 150V 10V ±20V
SQD50P03-07_GE3 SQD50P03-07_GE3 Vishay Siliconix 12.1575
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2017 Active 1 (Unlimited) 175°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 136W 11 ns TO-252AA 136W Tc 50A 63 ns P-Channel 7mOhm @ 20A, 10V 2.5V @ 250μA 5490pF @ 25V 146nC @ 10V 12ns 28 ns 20V 50A Tc 30V 4.5V 10V ±20V
FDD13AN06A0-F085 FDD13AN06A0-F085 ON Semiconductor 0.0000
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0.00000000 download 4 Weeks Tape & Reel (TR) Automotive, AEC-Q101, PowerTrench® yes Active 1 (Unlimited) 2 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED FDD13AN06 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 115W Tc SWITCHING 0.0135Ohm 60V SILICON N-Channel 13.5m Ω @ 50A, 10V 4V @ 250μA 1350pF @ 25V 29nC @ 10V 9.9A 9.9A Ta 50A Tc 60V 56 mJ 6V 10V ±20V
DMP2067LVT-7 DMP2067LVT-7 Diodes Incorporated 0.0000
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0.00000000 download 21 Weeks Tape & Reel (TR) Active 1 (Unlimited) ROHS3 Compliant SOT-23-6 Thin, TSOT-23-6 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) 1.2W Ta P-Channel 45m Ω @ 4.5A, 4.5V 1.5V @ 250μA 1575pF @ 10V 28nC @ 8V 4.2A Ta 20V 2.5V 4.5V ±8V
PSMN004-36B,118 PSMN004-36B,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2001 TrenchMOS™ Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 230W Tc SWITCHING 0.0054Ohm 36V SILICON N-Channel 4m Ω @ 25A, 10V 2V @ 1mA 6000pF @ 20V 97nC @ 5V 75A 75A Tc 36V 240A 120 mJ 4.5V 10V ±15V
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