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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IRF8721TRPBF IRF8721TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 8.5MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE 2.5W 8.2 ns 2.5W Ta 14A SWITCHING 8.1 ns SILICON N-Channel 8.5m Ω @ 14A, 10V 2.35V @ 25μA 1040pF @ 15V 12nC @ 4.5V 11ns 7 ns 20V 30V 2.35 V 14A Ta 4.5V 10V ±20V
RQ5E015RPTL RQ5E015RPTL ROHM Semiconductor 0.0000
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0.00000000 16 Weeks Cut Tape (CT) Active 1 (Unlimited) ROHS3 Compliant SC-96 Surface Mount 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 700mW Ta P-Channel 160m Ω @ 1.5A, 10V 2.5V @ 1mA 230pF @ 10V 3.2nC @ 5V 1.5A Ta 30V 4V 10V ±20V
BSP372L6327HTSA1 BSP372L6327HTSA1 Rochester Electronics, LLC 0.0000
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0.00000000 download Tape & Reel (TR) SIPMOS® Obsolete 1 (Unlimited) ROHS3 Compliant TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) PG-SOT223-4 1.8W Ta N-Channel 310mOhm @ 1.7A, 5V 2V @ 1mA 520pF @ 25V 1.7A Ta 100V 5V ±14V
APTM10DAM05TG APTM10DAM05TG Microsemi Corporation 0.0000
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0.00000000 download 36 Weeks Chassis Mount, Screw Bulk 2012 yes Active 1 (Unlimited) 12 EAR99 RoHS Compliant No 4 AVALANCHE RATED SP4 Chassis Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER UPPER UNSPECIFIED 12 1 SINGLE WITH BUILT-IN DIODE AND THERMISTOR ISOLATED 780W 80 ns 780W Tc 278A SWITCHING 0.005Ohm 280 ns SILICON N-Channel 5m Ω @ 125A, 10V 4V @ 5mA 20000pF @ 25V 700nC @ 10V 165ns 135 ns 30V 278A Tc 100V 3000 mJ 10V ±30V
PHM25NQ10T,518 PHM25NQ10T,518 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1997 TrenchMOS™ Obsolete 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8-VDFN Exposed Pad unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NO LEAD 8 YES R-PDSO-N8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 62.5W Tc SWITCHING 0.03Ohm 100V SILICON N-Channel 30m Ω @ 10A, 10V 4V @ 1mA 1800pF @ 20V 26.6nC @ 10V 30.7A 30.7A Tc 100V 60A 170 mJ 10V ±20V
SCT3120ALGC11 SCT3120ALGC11 ROHM Semiconductor 0.0000
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0.00000000 download 30 Weeks Through Hole Tube yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free TO-247-3 not_compliant 25.5mm Through Hole 175°C TJ SiCFET (Silicon Carbide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 1 SINGLE WITH BUILT-IN DIODE 103W 14 ns 103W Tc 21A 175°C SWITCHING 23 ns N-Channel 156m Ω @ 6.7A, 18V 5.6V @ 3.33mA 460pF @ 500V 38nC @ 18V 650V 21A Tc 52A 18V +22V, -4V
FCD4N60TM FCD4N60TM ON Semiconductor 0.0000
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0.00000000 download 13 Weeks ACTIVE (Last Updated: 4 days ago) Surface Mount Tape & Reel (TR) 2013 SuperFET™ yes Active 1 (Unlimited) 2 SMD/SMT EAR99 6.73mm ROHS3 Compliant Lead Free Tin 3.9A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.517mm 6.22mm 1.2Ohm Surface Mount 260.37mg -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING FCD4N60 R-PSSO-G2 1 FET General Purpose Power 1 DRAIN Single 50W 16 ns 5V 50W Tc 3.9A 150°C SWITCHING 36 ns SILICON N-Channel 1.2 Ω @ 2A, 10V 5V @ 250μA 540pF @ 25V 16.6nC @ 10V 45ns 30 ns 30V 600V 600V 5 V 3.9A Tc 10V ±30V
TK14A65W,S5X TK14A65W,S5X Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2004 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 6.000006g 150°C TJ MOSFET (Metal Oxide) 1 Single 60 ns 220mOhm TO-220SIS 40W Tc 13.7A 110 ns N-Channel 250mOhm @ 6.9A, 10V 3.5V @ 690μA 1300pF @ 300V 35nC @ 10V 20ns 7 ns 30V 650V 13.7A Ta 650V 1.3nF 10V ±30V 250 mΩ
NTS4172NT1G NTS4172NT1G ON Semiconductor 0.0000
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0.00000000 download LAST SHIPMENTS (Last Updated: 4 days ago) Surface Mount Tape & Reel (TR) 2008 yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 3 SC-70, SOT-323 85mOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 Single 350mW 294mW Ta 1.6A SWITCHING 16.1 ns SILICON N-Channel 93m Ω @ 1.7A, 10V 1.4V @ 250μA 381pF @ 15V 4.38nC @ 4.5V 4.4ns 2.2 ns 12V 30V 1.6A Ta 2.5V 10V ±12V
NTMFS4833NST3G NTMFS4833NST3G ON Semiconductor 0.0000
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0.00000000 download CONSULT SALES OFFICE (Last Updated: 1 week ago) Tape & Reel (TR) 2012 SENSEFET® yes Obsolete 1 (Unlimited) 8 EAR99 RoHS Compliant Lead Free No 8 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT 8 YES FET General Purpose Power 1 Single 2.31W 21 ns 900mW Ta 86.2W Tc 26A SWITCHING 37 ns SILICON N-Channel 2.2m Ω @ 30A, 10V 2.5V @ 250μA 5250pF @ 12V 86nC @ 11.5V 60ns 44 ns 20V 30V 16A 16A Ta 156A Tc 4.5V 10V ±20V
FDU8870 FDU8870 ON Semiconductor 0.0000
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0.00000000 download Tube PowerTrench® Obsolete 1 (Unlimited) TO-251-3 Short Leads, IPak, TO-251AA compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 160W Tc N-Channel 3.9m Ω @ 35A, 10V 2.5V @ 250μA 5160pF @ 15V 118nC @ 10V 21A Ta 160A Tc 30V 4.5V 10V ±20V
IRF520NSTRL IRF520NSTRL Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 1998 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 48W Tc SWITCHING 0.2Ohm 100V SILICON N-Channel 200m Ω @ 5.7A, 10V 4V @ 250μA 330pF @ 25V 25nC @ 10V 9.7A 9.7A Tc 100V 38A 91 mJ 10V ±20V
IXFH26N50 IXFH26N50 IXYS 0.0000
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0.00000000 download 8 Weeks Through Hole Tube 2002 HiPerFET™ yes Not For New Designs Not Applicable 3 EAR99 ROHS3 Compliant Lead Free 26A No 3 AVALANCHE RATED TO-247-3 Unknown 200mOhm Through Hole -55°C~150°C TJ 500V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) 3 FET General Purpose Power 1 DRAIN Single 300W 4V 300W Tc 250 ns 26A SWITCHING 65 ns SILICON N-Channel 200m Ω @ 13A, 10V 4V @ 4mA 4200pF @ 25V 160nC @ 10V 33ns 30 ns 20V 500V 500V 4 V 26A Tc 10V ±20V
IPB65R110CFDAATMA1 IPB65R110CFDAATMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 Automotive, AEC-Q101, CoolMOS™ no Active 1 (Unlimited) 2 ROHS3 Compliant Contains Lead No HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING 4 R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 16 ns 650V 277.8W Tc 31.2A SWITCHING 68 ns SILICON N-Channel 110m Ω @ 12.7A, 10V 4.5V @ 1.3mA 3240pF @ 100V 118nC @ 10V 11ns 6 ns 20V 31.2A Tc 99.6A 845 mJ 10V ±20V
SI8808DB-T2-E1 SI8808DB-T2-E1 Vishay Siliconix 0.3797
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0.00000000 download 30 Weeks Surface Mount Digi-Reel® 2013 TrenchFET® Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant 4 4-UFBGA unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM BALL 1 1 Single 900mW 500mW Ta 2.5A SWITCHING SILICON N-Channel 95m Ω @ 1A, 4.5V 900mV @ 250μA 330pF @ 15V 10nC @ 8V 8V 30V 1.5V 4.5V ±8V
IPI600N25N3GAKSA1 IPI600N25N3GAKSA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Through Hole Tube 2008 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 136W 10 ns 250V 136W Tc 25A SWITCHING 0.06Ohm 22 ns SILICON N-Channel 60m Ω @ 25A, 10V 4V @ 90μA 2350pF @ 100V 29nC @ 10V 8 ns 20V 25A Tc 10V ±20V
SPW16N50C3FKSA1 SPW16N50C3FKSA1 Infineon Technologies 0.0000
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0.00000000 download Tube 2005 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED, HIGH VOLTAGE TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-247AD 160W Tc 0.28Ohm 500V SILICON N-Channel 280m Ω @ 10A, 10V 3.9V @ 675μA 1600pF @ 25V 66nC @ 10V 16A 16A Tc 560V 48A 460 mJ 10V ±20V
IRF3711S IRF3711S Infineon Technologies 0.0000
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0.00000000 Tube 2004 HEXFET® Obsolete 1 (Unlimited) EAR99 Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 3.1W Ta 120W Tc N-Channel 6m Ω @ 15A, 10V 3V @ 250μA 2980pF @ 10V 44nC @ 4.5V 110A Tc 20V 4.5V 10V ±20V
DMTH43M8LFGQ-13 DMTH43M8LFGQ-13 Diodes Incorporated 0.9413
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0.00000000 download 20 Weeks Tape & Reel (TR) Automotive, AEC-Q101 Active 1 (Unlimited) ROHS3 Compliant 8-PowerVDFN not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 2.62W Ta 65.2W Tc N-Channel 3m Ω @ 20A, 10V 2.5V @ 250μA 2798pF @ 20V 40.1nC @ 10V 24A Ta 100A Tc 40V 5V 10V ±20V
IPA60R600P7SXKSA1 IPA60R600P7SXKSA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Tube 2014 CoolMOS™ P7 Active Not Applicable 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 21W Tc SWITCHING 0.6Ohm 600V SILICON N-Channel 600m Ω @ 1.7A, 10V 4V @ 80μA 363pF @ 400V 9nC @ 10V 6A Tc 600V 16A 17 mJ 10V ±20V
IRL1004S IRL1004S Infineon Technologies 0.0000
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0.00000000 Tube 1999 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e0 Tin/Lead (Sn/Pb) SINGLE GULL WING 225 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 200W Tc SWITCHING 0.0065Ohm 40V SILICON N-Channel 6.5m Ω @ 78A, 10V 1V @ 250μA 5330pF @ 25V 100nC @ 4.5V 130A 130A Tc 40V 520A 700 mJ 4.5V 10V ±16V
FQA11N90-F109 FQA11N90-F109 ON Semiconductor 0.0000
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0.00000000 download 4 Weeks ACTIVE (Last Updated: 16 hours ago) Through Hole Tube QFET® yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-3P-3, SC-65-3 Through Hole 6.401g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 Single 300W 65 ns 300W Tc 11.4A SWITCHING 0.96Ohm 165 ns SILICON N-Channel 960m Ω @ 5.7A, 10V 5V @ 250μA 3500pF @ 25V 94nC @ 10V 135ns 90 ns 30V 900V 11.4A Tc 45.6A 10V ±30V
FQD5P20TF FQD5P20TF ON Semiconductor 0.0000
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0.00000000 Tape & Reel (TR) 2016 QFET® Obsolete 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) D-Pak 2.5W Ta 45W Tc P-Channel 1.4Ohm @ 1.85A, 10V 5V @ 250μA 430pF @ 25V 13nC @ 10V 3.7A Tc 200V 10V ±30V
IPD60R380C6 IPD60R380C6 Infineon Technologies 0.0000
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0.00000000 download 26 Weeks Cut Tape (CT) 2008 CoolMOS™ yes Discontinued 1 (Unlimited) 2 ROHS3 Compliant HIGH VOLTAGE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 83W Tc SWITCHING 0.38Ohm 600V SILICON N-Channel 380m Ω @ 3.8A, 10V 3.5V @ 320μA 700pF @ 100V 32nC @ 10V 10.6A 10.6A Tc 600V 30A 210 mJ 10V ±20V
FDP15N65 FDP15N65 ON Semiconductor 0.0000
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0.00000000 download Through Hole Tube 2004 UniFET™ Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) Single 250W 440mOhm TO-220-3 250W Tc 15A 105 ns N-Channel 440mOhm @ 7.5A, 10V 5V @ 250μA 3095pF @ 25V 63nC @ 10V 125ns 65 ns 30V 650V 15A Tc 650V 3.095nF 10V ±30V 440 mΩ
FDMS6673BZ FDMS6673BZ ON Semiconductor 0.0000
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0.00000000 download 10 Weeks Tape & Reel (TR) 2009 PowerTrench® yes Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED YES R-PDSO-F5 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE MO-240AA DRAIN 2.5W Ta 73W Tc SWITCHING 0.0068Ohm 30V SILICON P-Channel 6.8m Ω @ 15.2A, 10V 3V @ 250μA 5915pF @ 15V 130nC @ 10V 15.2A 15.2A Ta 28A Tc 30V 1045 pF 4.5V 10V ±25V
IPA60R600P7SE8228XKSA1 IPA60R600P7SE8228XKSA1 Infineon Technologies 0.0000
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0.00000000 18 Weeks CoolMOS™ P7 Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) 21W Tc N-Channel 600m Ω @ 1.7A, 10V 4V @ 80μA 363pF @ 400V 9nC @ 10V 6A Tc 600V 10V ±20V
STP15NM60ND STP15NM60ND STMicroelectronics 0.0000
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0.00000000 download Through Hole Tube FDmesh™ II Obsolete 1 (Unlimited) 3 EAR99 10.4mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 15.75mm 4.6mm 299mOhm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) STP15N 3 FET General Purpose Power 1 TO-220AB Single 125W 17 ns 4V 125W Tc 14A SWITCHING 47 ns SILICON N-Channel 299m Ω @ 7A, 10V 5V @ 250μA 1250pF @ 50V 40nC @ 10V 20ns 28 ns 25V 600V 14A Tc 56A 10V ±25V
R6012JNJGTL R6012JNJGTL ROHM Semiconductor 0.0000
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0.00000000 download 18 Weeks Tape & Reel (TR) Active 1 (Unlimited) 2 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 160W Tc SWITCHING 0.39Ohm 600V SILICON N-Channel 390m Ω @ 6A, 15V 7V @ 2.5mA 900pF @ 100V 28nC @ 15V 12A 12A Tc 600V 36A 327 mJ 15V ±30V
TSM8N70CI C0 TSM8N70CI C0 Taiwan Semiconductor Corporation 0.0000
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0.00000000 download Obsolete 1 (Unlimited) Non-RoHS Compliant TO-220-3 Full Pack, Isolated Tab Through Hole 150°C TJ MOSFET (Metal Oxide) ITO-220AB 40W Tc N-Channel 900mOhm @ 4A, 10V 4V @ 250μA 2006pF @ 25V 32nC @ 10V 8A Tc 700V 10V ±30V
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