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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Reference Standard Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Case Connection Element Configuration Power Dissipation Turn On Delay Time Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
IXTY64N055T-TRL IXTY64N055T-TRL IXYS 0.0000
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0.00000000 24 Weeks Active TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 130W Tc N-Channel 13m Ω @ 32A, 10V 4V @ 25μA 1420pF @ 25V 37nC @ 10V 64A Tc 55V 10V ±20V
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0.00000000 download 17 Weeks Surface Mount Tube 2013 Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free No TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount 1.770002g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING 3 R-PSSO-G2 1 1 DRAIN Single 83W 19 ns 83W Tc 200mA SWITCHING 32 ns SILICON N-Channel 450 Ω @ 50mA, 10V 4.5V @ 250μA 116pF @ 25V 7.4nC @ 10V 19ns 33 ns 20V 2.5kV 0.2A 200mA Tc 2500V 0.6A 10V ±20V
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0.00000000 26 Weeks Active TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1kW Tc N-Channel 3.5m Ω @ 100A, 10V 4V @ 250μA 26000pF @ 25V 430nC @ 10V 320A Tc 100V 10V ±20V
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0.00000000 download 8 Weeks Through Hole Tube 2000 MegaMOS™ yes Obsolete Not Applicable 3 RoHS Compliant Lead Free 13A 3 TO-247-3 920mOhm Through Hole -55°C~150°C TJ 1.1kV MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 TO-247AD DRAIN Single 360W 360W Tc 13A SWITCHING 80 ns SILICON N-Channel 920m Ω @ 500mA, 10V 4.5V @ 250μA 5650pF @ 25V 195nC @ 10V 21ns 36 ns 20V 1.1kV 13A Tc 1100V 52A 10V ±20V
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0.00000000 download Surface Mount Tube 2011 yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Lead Free 220 PLUS-220SMD Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 57mW 83W Tc 200mA SILICON N-Channel 450 Ω @ 50mA, 10V 4.5V @ 250μA 116pF @ 25V 7.4nC @ 10V 20V 2.5kV 0.2A 200mA Tc 2500V 0.5A 10V ±20V
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0.00000000 download 24 Weeks Surface Mount Tube 2012 TrenchP™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING 4 R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 150W Tc 15A SWITCHING 0.24Ohm 150V SILICON P-Channel 240m Ω @ 7A, 10V 4.5V @ 250μA 3650pF @ 25V 48nC @ 10V 15A Tc 150V 45A 300 mJ 10V ±15V
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0.00000000 Bulk HiPerFET™ Obsolete 1 (Unlimited) Die 150°C TJ MOSFET (Metal Oxide) N-Channel 100V
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0.00000000 19 Weeks Active TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 180W Tc N-Channel 310m Ω @ 6A, 10V 5V @ 250μA 1134pF @ 25V 18.5nC @ 10V 12A Tc 650V 10V ±30V
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0.00000000 20 Weeks Tape & Reel (TR) Active 2 LOW LEAKAGE CURRENT, PD-CASE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount SINGLE GULL WING YES R-PSSO-G2 150°C IEC-60747 SILICON 2 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS Standard 10A GENERAL PURPOSE 1 1200V TO-252AA 92A ANODE AND CATHODE Standard Recovery >500ns, > 200mA (Io) 5μA @ 1200V 1.55V @ 10A -55°C~175°C 1200V 10A 5μA 75W 1pF @ 400V 1MHz
IXFP90N20X3M IXFP90N20X3M IXYS 3.6298
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0.00000000 download Through Hole Tube 2006 HiPerFET™, PolarHT™ yes Active 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 TO-220AB ISOLATED Single 50W 50W Tc 3.5A SWITCHING 55 ns SILICON N-Channel 1.44 Ω @ 3.5A, 10V 5V @ 1mA 1890pF @ 25V 32nC @ 10V 800V 3.5A Tc 300 mJ 10V ±30V
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0.00000000 download Surface Mount Tube 2004 HiPerFET™ yes Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free AVALANCHE RATED TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 300W 300W Tc 12A SWITCHING 62 ns SILICON N-Channel 1.05 Ω @ 6A, 10V 4.5V @ 4mA 4000pF @ 25V 155nC @ 10V 33ns 32 ns 20V 1kV 12A Tc 1000V 48A 10V ±20V
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0.00000000 Obsolete 1 (Unlimited)
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0.00000000 download Through Hole Tube 2012 yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 3 AVALANCHE RATED, UL RECOGNIZED ISOPLUS220™ 27MOhm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 ISOLATED Single 180W 180W Tc 50A SWITCHING 60 ns SILICON N-Channel 27m Ω @ 55A, 10V 4.5V @ 1mA 9400pF @ 25V 157nC @ 10V 27ns 27 ns 20V 250V 50A Tc 1000 mJ 10V ±20V
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0.00000000 26 Weeks Active TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 660W Tc N-Channel 420m Ω @ 12A, 10V 6.5V @ 1mA 7200pF @ 25V 130nC @ 10V 24A Tc 900V 10V ±30V
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0.00000000 download Surface Mount Tube 2006 TrenchMV™ yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Lead Free AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 DRAIN Single 176W 176W Tc 76A SWITCHING 0.012Ohm 38 ns SILICON N-Channel 12m Ω @ 25A, 10V 4V @ 50μA 2580pF @ 25V 57nC @ 10V 40ns 33 ns 75V 76A Tc 210A 500 mJ 10V ±20V
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0.00000000 download 24 Weeks Surface Mount Tube 2016 TrenchT4™ yes Active 1 (Unlimited) ROHS3 Compliant TO-263-7, D2Pak (6 Leads + Tab) unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 480W Tc 340A N-Channel 1.7m Ω @ 100A, 10V 4V @ 250μA 13000pF @ 25V 256nC @ 10V 340A Tc 40V 10V ±15V
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0.00000000 download 28 Weeks Tube 2016 TrenchT4™ yes Active 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 480W Tc N-Channel 1.7m Ω @ 100A, 10V 4V @ 250μA 13000pF @ 25V 256nC @ 10V 340A Tc 40V 10V ±15V
M0955LC200 M0955LC200 IXYS 0.0000
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0.00000000 8 Weeks Bulk Active 1 (Unlimited) ROHS3 Compliant DO-200AB, B-PUK Chassis Mount Standard W4 Standard Recovery >500ns, > 200mA (Io) 50mA @ 2000V 2.07V @ 1900A -40°C~125°C 2000V 955A 3.4μs
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0.00000000 download 24 Weeks Tube Active TO-247-3 Variant compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 104W Tc N-Channel 80 Ω @ 300mA, 10V 4V @ 250μA 290pF @ 25V 10.4nC @ 10V 600mA Tc 2200V 10V ±20V
IXFE44N50QD3 IXFE44N50QD3 IXYS 0.0000
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0.00000000 download Chassis Mount Tube 2004 HiPerFET™ yes Active 1 (Unlimited) 4 ROHS3 Compliant 4 SOT-227-4, miniBLOC Chassis Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 4 FET General Purpose Power Not Qualified 1 ISOLATED Single 400W 400W Tc 39A SWITCHING 0.12Ohm 75 ns SILICON N-Channel 120m Ω @ 22A, 10V 4V @ 4mA 8000pF @ 25V 190nC @ 10V 22ns 10 ns 20V 500V 39A Tc 176A 2500 mJ 10V ±20V
IXFR90N20 IXFR90N20 IXYS 0.0000
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0.00000000 Through Hole Tube yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED ISOPLUS247™ Through Hole MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 90A 0.022Ohm 200V SILICON N-Channel 90A Tc 200V
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0.00000000 Chassis Mount Tube yes Active 1 (Unlimited) 4 ROHS3 Compliant AVALANCHE RATED SOT-227-4, miniBLOC Chassis Mount MOSFET (Metal Oxide) ENHANCEMENT MODE NICKEL UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED R-PUFM-X4 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 500W Tc 24A 0.45Ohm 900V SILICON N-Channel 24A Tc 900V
IXFR30N110P IXFR30N110P IXYS 0.0000
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0.00000000 download Through Hole Tube 2011 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 ROHS3 Compliant 3 AVALANCHE RATED, UL RECOGNIZED ISOPLUS247™ Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 ISOLATED Single 320W 320W Tc 16A SWITCHING 0.4Ohm 83 ns SILICON N-Channel 400m Ω @ 15A, 10V 6.5V @ 1mA 13600pF @ 25V 235nC @ 10V 48ns 52 ns 30V 1.1kV 16A Tc 1100V 75A 1500 mJ 10V ±30V
IXFK170N20T IXFK170N20T IXYS 14.2827
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0.00000000 download 30 Weeks Through Hole Tube 2009 GigaMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free AVALANCHE RATED TO-264-3, TO-264AA unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1150W Tc 170A SWITCHING 0.011Ohm 200V SILICON N-Channel 11m Ω @ 60A, 10V 5V @ 4mA 19600pF @ 25V 265nC @ 10V 170A Tc 200V 470A 3000 mJ 10V ±20V
IXTH2N300P3HV IXTH2N300P3HV IXYS 0.0000
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0.00000000 download 24 Weeks Tube 2015 Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Variant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 520W Tc N-Channel 21 Ω @ 1A, 10V 5V @ 250μA 1890pF @ 25V 73nC @ 10V 2A Tc 3000V 10V ±20V
IXFB210N20P IXFB210N20P IXYS 34.3300
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0.00000000 download 26 Weeks Through Hole Tube 2010 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 264 AVALANCHE RATED TO-264-3, TO-264AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 DRAIN Single 1.5kW 1500W Tc 210A SWITCHING 0.0105Ohm SILICON N-Channel 10.5m Ω @ 105A, 10V 4.5V @ 8mA 18600pF @ 25V 255nC @ 10V 20V 200V 210A Tc 600A 4000 mJ 10V ±20V
IXTP110N12T2 IXTP110N12T2 IXYS 0.0000
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0.00000000 download 24 Weeks Tube TrenchT2™ Not For New Designs 1 (Unlimited) ROHS3 Compliant TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 517W Tc N-Channel 14m Ω @ 55A, 10V 4.5V @ 250μA 6570pF @ 25V 120nC @ 10V 110A Tc 120V 10V ±20V
  • IXTY64N055T-TRL
    IXTY64N055T-TRL IXYS

    MOSFET (Metal Oxide) N-Channel 13m Ω @ 32A, 10V ±20V 1420pF @ 25V 37nC @ 10V 55V TO-252-3, DPak (2 Leads + Tab), SC-63

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  • IXTA02N250HV
    IXTA02N250HV IXYS

    MOSFET (Metal Oxide) N-Channel Tube 450 Ω @ 50mA, 10V ±20V 116pF @ 25V 7.4nC @ 10V 2500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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  • IXFT320N10T2-TRL
    IXFT320N10T2-TRL IXYS

    MOSFET (Metal Oxide) N-Channel 3.5m Ω @ 100A, 10V ±20V 26000pF @ 25V 430nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

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  • IXTH13N110
    IXTH13N110 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 920m Ω @ 500mA, 10V ±20V 5650pF @ 25V 195nC @ 10V 1100V TO-247-3

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  • IXTV02N250S
    IXTV02N250S IXYS

    MOSFET (Metal Oxide) N-Channel Tube 450 Ω @ 50mA, 10V ±20V 116pF @ 25V 7.4nC @ 10V 2500V PLUS-220SMD

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  • IXTY15P15T
    IXTY15P15T IXYS

    MOSFET (Metal Oxide) P-Channel Tube 240m Ω @ 7A, 10V ±15V 3650pF @ 25V 48nC @ 10V 150V TO-252-3, DPak (2 Leads + Tab), SC-63

    Price: 3.1817

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  • IXFD80N10Q-8XQ
    IXFD80N10Q-8XQ IXYS

    MOSFET (Metal Oxide) N-Channel Bulk 100V Die

    Price: 0.0000

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  • IXFA12N65X2-TRL
    IXFA12N65X2-TRL IXYS

    MOSFET (Metal Oxide) N-Channel 310m Ω @ 6A, 10V ±30V 1134pF @ 25V 18.5nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

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  • DMA10P1200UZ-TRL
    DMA10P1200UZ-TRL IXYS

    Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.55V @ 10A -55°C~175°C 5μA @ 1200V 2-Termination Tape & Reel (TR) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount

    Price: 2.3126

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  • IXFP90N20X3M
    IXFP90N20X3M IXYS

    MOSFET (Metal Oxide) N-Channel Tube 12.8m Ω @ 45A, 10V ±20V 5420pF @ 25V 78nC @ 10V 200V TO-220-3 Full Pack, Isolated Tab

    Price: 3.6298

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  • IXTA100N15X4
    IXTA100N15X4 IXYS

    MOSFET (Metal Oxide) N-Channel 11.5m Ω @ 50A, 10V ±20V 3970pF @ 25V 74nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 9.1803

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  • IXFP7N80PM
    IXFP7N80PM IXYS

    MOSFET (Metal Oxide) N-Channel Tube 1.44 Ω @ 3.5A, 10V ±30V 1890pF @ 25V 32nC @ 10V TO-220-3

    Price: 0.0000

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  • IXFT12N100
    IXFT12N100 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 1.05 Ω @ 6A, 10V ±20V 4000pF @ 25V 155nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

    Price: 0.0000

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  • IXFD15N100-8X
    IXFD15N100-8X IXYS

    Price: 0.0000

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  • IXFX26N60Q
    IXFX26N60Q IXYS

    MOSFET (Metal Oxide) N-Channel Bulk 250m Ω @ 13A, 10V ±20V 5100pF @ 25V 200nC @ 10V TO-247-3

    Price: 0.0000

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  • IXTC110N25T
    IXTC110N25T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 27m Ω @ 55A, 10V ±20V 9400pF @ 25V 157nC @ 10V ISOPLUS220™

    Price: 0.0000

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  • IXFT24N90P-TRL
    IXFT24N90P-TRL IXYS

    MOSFET (Metal Oxide) N-Channel 420m Ω @ 12A, 10V ±30V 7200pF @ 25V 130nC @ 10V 900V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

    Price: 0.0000

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  • IXTA76N075T
    IXTA76N075T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 12m Ω @ 25A, 10V ±20V 2580pF @ 25V 57nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.5153

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  • IXTA340N04T4-7
    IXTA340N04T4-7 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 1.7m Ω @ 100A, 10V ±15V 13000pF @ 25V 256nC @ 10V 40V TO-263-7, D2Pak (6 Leads + Tab)

    Price: 0.0000

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  • IXTA340N04T4
    IXTA340N04T4 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 1.7m Ω @ 100A, 10V ±15V 13000pF @ 25V 256nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

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  • M0955LC200
    M0955LC200 IXYS

    Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 2.07V @ 1900A -40°C~125°C 50mA @ 2000V Bulk DO-200AB, B-PUK Chassis Mount

    Price: 0.0000

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  • IXTH06N220P3HV
    IXTH06N220P3HV IXYS

    MOSFET (Metal Oxide) N-Channel Tube 80 Ω @ 300mA, 10V ±20V 290pF @ 25V 10.4nC @ 10V 2200V TO-247-3 Variant

    Price: 0.0000

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  • IXFE44N50QD3
    IXFE44N50QD3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 120m Ω @ 22A, 10V ±20V 8000pF @ 25V 190nC @ 10V SOT-227-4, miniBLOC

    Price: 0.0000

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  • IXFR90N20
    IXFR90N20 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 200V ISOPLUS247™

    Price: 0.0000

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  • IXFN24N90Q
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    MOSFET (Metal Oxide) N-Channel Tube 900V SOT-227-4, miniBLOC

    Price: 0.0000

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  • IXFR30N110P
    IXFR30N110P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 400m Ω @ 15A, 10V ±30V 13600pF @ 25V 235nC @ 10V 1100V ISOPLUS247™

    Price: 0.0000

    RFQ
  • IXFK170N20T
    IXFK170N20T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 11m Ω @ 60A, 10V ±20V 19600pF @ 25V 265nC @ 10V 200V TO-264-3, TO-264AA

    Price: 14.2827

    RFQ
  • IXTH2N300P3HV
    IXTH2N300P3HV IXYS

    MOSFET (Metal Oxide) N-Channel Tube 21 Ω @ 1A, 10V ±20V 1890pF @ 25V 73nC @ 10V 3000V TO-247-3 Variant

    Price: 0.0000

    RFQ
  • IXFB210N20P
    IXFB210N20P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 10.5m Ω @ 105A, 10V ±20V 18600pF @ 25V 255nC @ 10V TO-264-3, TO-264AA

    Price: 34.3300

    RFQ
  • IXTP110N12T2
    IXTP110N12T2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 14m Ω @ 55A, 10V ±20V 6570pF @ 25V 120nC @ 10V 120V TO-220-3

    Price: 0.0000

    RFQ
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