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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Reference Standard Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Case Connection Structure Polarity/Channel Type Power Dissipation-Max (Abs) On-State Current-Max Repetitive Peak Off-state Voltage Leakage Current (Max) Non-Repetitive Pk On-state Cur Circuit Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Hold Current Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Voltage - Off State Current - Hold (Ih) (Max) Repetitive Peak Reverse Voltage Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) RMS On-state Current-Max Desc. of Quick-Connects Number of SCRs, Diodes
IXFN30N120P IXFN30N120P IXYS 0.0000
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0.00000000 download 30 Weeks Chassis Mount Tube 2008 Polar™ yes Active 1 (Unlimited) 4 ROHS3 Compliant 4 UL RECOGNIZED, AVALANCHE RATED SOT-227-4, miniBLOC Chassis Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Nickel (Ni) UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 890W 890W Tc 30A SWITCHING 0.35Ohm 95 ns SILICON N-Channel 350m Ω @ 500mA, 10V 6.5V @ 1mA 19000pF @ 25V 310nC @ 10V 60ns 56 ns 30V 1.2kV 30A Tc 1200V 75A 2000 mJ 10V ±30V
IXFP60N25X3M IXFP60N25X3M IXYS 0.0000
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0.00000000 download 19 Weeks Tube HiPerFET™ yes Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 36W Tc N-Channel 23m Ω @ 30A, 10V 4.5V @ 1.5mA 3610pF @ 25V 50nC @ 10V 60A Tc 250V 10V ±20V
DSEP6-06BS-TRL DSEP6-06BS-TRL IXYS 0.0000
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0.00000000 download 20 Weeks Tape & Reel (TR) HiPerFRED™ Active 1 (Unlimited) 2 ROHS3 Compliant FREE WHEELING DIODE, LOW LEAKAGE CURRENT, PD-CASE, SNUBBER DIODE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount AVALANCHE SINGLE GULL WING DSEP6-06 YES R-PSSO-G2 150°C IEC-60747 SILICON 1 SINGLE Standard 6A FAST SOFT RECOVERY 1 600V 40A CATHODE Fast Recovery =< 500ns, > 200mA (Io) 50μA @ 600V 2.66V @ 6A -55°C~175°C 600V 6A 50μA 15ns 55W 5pF @ 400V 1MHz
VTO70-14IO7 VTO70-14IO7 IXYS 0.0000
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0.00000000 download Chassis Mount Bulk 2000 yes Obsolete 1 (Unlimited) 11 RoHS Compliant 70A FAST FO-T-A Chassis Mount -40°C~125°C TJ 8541.30.00.80 e4 Gold (Au) - with Nickel (Ni) barrier UPPER SOLDER LUG NOT SPECIFIED NOT SPECIFIED VTO R-XUFM-D11 Silicon Controlled Rectifiers Not Qualified 6 3 PHASE BRIDGE ISOLATED Bridge, 3-Phase - All SCRs 70000A 1400V 5mA 550 A SCR 200mA SCR 1.4kV 200mA 1400V 1.5V 550A 600A 100mA 36A 3AK-CA-CK 6 SCRs
IXFH150N17T IXFH150N17T IXYS 4.8963
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0.00000000 download Through Hole Tube 2008 TrenchHV™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED TO-247-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 TO-247AD DRAIN Single 830mW 830W Tc 150A SWITCHING 0.012Ohm SILICON N-Channel 12m Ω @ 75A, 10V 5V @ 3mA 9800pF @ 25V 155nC @ 10V 30ns 30 ns 30V 175V 150A Tc 400A 1500 mJ 10V
IXTY1N80P-TRL IXTY1N80P-TRL IXYS 0.0000
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0.00000000 24 Weeks Active TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 42W Tc N-Channel 14 Ω @ 500mA, 10V 4V @ 50μA 250pF @ 25V 9nC @ 10V 1A Tc 800V 10V ±30V
IXTQ152N085T IXTQ152N085T IXYS 0.0000
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0.00000000 download Through Hole Tube 2006 TrenchMV™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant 3 TO-3P-3, SC-65-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 DRAIN Single 360W 360W Tc 152A SWITCHING 0.007Ohm 50 ns SILICON N-Channel 7m Ω @ 25A, 10V 4V @ 250μA 5500pF @ 25V 114nC @ 10V 50ns 45 ns 85V 152A Tc 410A 750 mJ 10V ±20V
IXFJ15N100Q IXFJ15N100Q IXYS 0.0000
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0.00000000 Obsolete 1 (Unlimited)
DMA50P1600HB DMA50P1600HB IXYS 5.5724
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0.00000000 20 Weeks Tube Active 3 EAR99 LOW LEAKAGE CURRENT, PD-CASE TO-247-3 Through Hole 8541.10.00.80 SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 150°C IEC-60747 SILICON 2 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS Standard 50A GENERAL PURPOSE 1 1600V TO-247AD 595A ANODE AND CATHODE Standard Recovery >500ns, > 200mA (Io) 40μA @ 1600V 1.3V @ 50A -55°C~175°C 1600V 50A 40μA 330W 19pF @ 400V 1MHz
IXFA18N60X IXFA18N60X IXYS 0.0000
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0.00000000 download 19 Weeks Surface Mount Tube 2015 HiPerFET™ Active 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 320W Tc 18A N-Channel 230m Ω @ 9A, 10V 4.5V @ 1.5mA 1440pF @ 25V 35nC @ 10V 18A Tc 600V 10V ±30V
IXFH52N50P2 IXFH52N50P2 IXYS 0.0000
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0.00000000 download 30 Weeks Through Hole Tube 2011 HiPerFET™, PolarHV™ yes Active 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 DRAIN Single 960W 960W Tc 52A SWITCHING 0.12Ohm SILICON N-Channel 120m Ω @ 26A, 10V 4.5V @ 4mA 6800pF @ 25V 113nC @ 10V 30V 500V 52A Tc 150A 1500 mJ 10V ±30V
IXTY08N50D2 IXTY08N50D2 IXYS 4.0750
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0.00000000 download 19 Weeks Surface Mount Tube 2009 yes Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) SINGLE GULL WING 4 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 60W 60W Tc 800mA AMPLIFIER SILICON N-Channel 4.6 Ω @ 400mA, 0V 312pF @ 25V 12.7nC @ 5V Depletion Mode 800mA Tc 500V ±20V
IXTV200N10TS IXTV200N10TS IXYS 0.0000
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0.00000000 download Surface Mount Tube 2008 TrenchMV™ yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant 3 AVALANCHE RATED PLUS-220SMD Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 550W 550W Tc 200A SWITCHING 0.0055Ohm 45 ns SILICON N-Channel 5.5m Ω @ 50A, 10V 4.5V @ 250μA 9400pF @ 25V 152nC @ 10V 31ns 34 ns 100V 200A Tc 500A 1500 mJ 10V ±30V
FMD40-06KC FMD40-06KC IXYS 0.0000
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0.00000000 download 32 Weeks Through Hole Tube 2008 HiPerFET™ yes Active 1 (Unlimited) 5 ROHS3 Compliant 5 HIGH RELIABILITY i4-Pac™-5 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 5 FET General Purpose Power Not Qualified 1 ISOLATED Single 280W 38A SWITCHING 0.07Ohm 110 ns SILICON N-Channel 70m Ω @ 20A, 10V 3.9V @ 2.7mA 250nC @ 10V 30ns 10 ns 20V 600V Super Junction 38A Tc 10V ±20V
IXFC16N80P IXFC16N80P IXYS 0.0000
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0.00000000 download Through Hole Tube 2006 HiPerFET™, PolarHT™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant 3 AVALANCHE RATED ISOPLUS220™ Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 ISOLATED Single 150W 150W Tc 9A SWITCHING 0.65Ohm 75 ns SILICON N-Channel 650m Ω @ 8A, 10V 5V @ 4mA 4600pF @ 25V 71nC @ 10V 32ns 29 ns 30V 800V 9A 9A Tc 48A 1500 mJ 10V ±30V
IXFQ24N50Q IXFQ24N50Q IXYS 0.0000
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0.00000000 Through Hole Tube Active 1 (Unlimited) ROHS3 Compliant TO-3P-3, SC-65-3 Through Hole MOSFET (Metal Oxide) 24A N-Channel 24A Tc 500V
IXTQ96N25T IXTQ96N25T IXYS 10.9653
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0.00000000 download Through Hole Tube 2007 TrenchHV™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 AVALANCHE RATED TO-3P-3, SC-65-3 unknown Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 PURE TIN NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 DRAIN Single 625W 625W Tc 96A SWITCHING 0.029Ohm 59 ns SILICON N-Channel 29m Ω @ 500mA, 10V 5V @ 1mA 6100pF @ 25V 114nC @ 10V 22ns 28 ns 30V 250V 96A Tc 250A 2000 mJ 10V ±30V
IXFR15N100Q3 IXFR15N100Q3 IXYS 17.4647
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0.00000000 download 30 Weeks Through Hole Tube 2011 HiPerFET™ Active 1 (Unlimited) 3 16.13mm ROHS3 Compliant 247 AVALANCHE RATED, UL RECOGNIZED TO-247-3 unknown 21.34mm 5.21mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 3 R-PSIP-T3 FET General Purpose Power 1 ISOLATED Single 400W 28 ns 400W Tc 10A SWITCHING 30 ns SILICON N-Channel 1.2 Ω @ 7.5A, 10V 6.5V @ 4mA 3250pF @ 25V 64nC @ 10V 250ns 30V 1kV 10A Tc 1000V 45A 1000 mJ 10V ±30V
IXTK210P10T IXTK210P10T IXYS 0.0000
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0.00000000 download 28 Weeks 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED ENHANCEMENT MODE SINGLE THROUGH-HOLE 3 NO R-PSFM-T3 150°C Other Transistors 1 SINGLE WITH BUILT-IN DIODE TO-264AA DRAIN P-CHANNEL 1040W SWITCHING 0.0075Ohm 100V METAL-OXIDE SEMICONDUCTOR SILICON 210A 800A 3000 mJ
IXFK20N120 IXFK20N120 IXYS 0.0000
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0.00000000 download Through Hole Tube 2003 HiPerFET™ yes Active 1 (Unlimited) 3 19.96mm ROHS3 Compliant Lead Free 3 TO-264-3, TO-264AA unknown 26.16mm 5.13mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 DRAIN Single 780W 25 ns 780W Tc 20A SWITCHING 0.75Ohm 75 ns SILICON N-Channel 750m Ω @ 500mA, 10V 4.5V @ 8mA 7400pF @ 25V 160nC @ 10V 45ns 20 ns 30V 1.2kV 20A Tc 1200V 80A 2000 mJ 10V ±30V
IXTH04N300P3HV IXTH04N300P3HV IXYS 32.6164
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0.00000000 download 17 Weeks Through Hole Tube 2014 Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Variant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 104W Tc 400mA N-Channel 190 Ω @ 200mA, 10V 4V @ 250μA 283pF @ 25V 13nC @ 10V 400mA Tc 3000V 10V ±20V
DLA10IM800UC-TUB DLA10IM800UC-TUB IXYS 0.0000
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0.00000000 20 Weeks Tube Active 2 LOW LEAKAGE CURRENT, PD-CASE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount SINGLE GULL WING YES R-PSSO-G2 150°C IEC-60747 SILICON 1 SINGLE Standard 10A EFFICIENCY 1 800V TO-252AA 110A CATHODE Standard Recovery >500ns, > 200mA (Io) 5μA @ 800V 1.22V @ 10A -55°C~175°C 800V 10A 5μA 75W 3pF @ 400V 1MHz
IXFX20N120 IXFX20N120 IXYS 0.0000
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0.00000000 download Through Hole Tube 2003 HiPerFET™ yes Active 1 (Unlimited) 3 Through Hole EAR99 ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC 750mOhm Through Hole 6g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) 3 1 DRAIN Single 780W 4.5V 300 ns 780W Tc 20A SWITCHING 75 ns SILICON N-Channel 750m Ω @ 500mA, 10V 4.5V @ 8mA 7400pF @ 25V 160nC @ 10V 45ns 20 ns 30V 1.2kV 1.2kV 4.5 V 20A Tc 1200V 80A 2000 mJ 10V ±30V
MCB60I1200TZ-TUB MCB60I1200TZ-TUB IXYS 0.0000
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0.00000000 20 Weeks Active TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Surface Mount -40°C~175°C TJ SiCFET (Silicon Carbide) N-Channel 34m Ω @ 50A, 20V 4V @ 15mA 2790pF @ 1000V 160nC @ 20V 90A Tc 1.2kV 20V +20V, -5V
IXFV74N20P IXFV74N20P IXYS 0.0000
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0.00000000 download Through Hole Bulk 2008 PolarHT™ HiPerFET™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant 3 AVALANCHE RATED TO-220-3, Short Tab Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 480W 480W Tc 74A SWITCHING 60 ns SILICON N-Channel 34m Ω @ 37A, 10V 5V @ 4mA 3300pF @ 25V 107nC @ 10V 21ns 21 ns 20V 200V 74A Tc 200A 1000 mJ 10V ±20V
IXTU5N50P IXTU5N50P IXYS 0.0000
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0.00000000 download Surface Mount Tube 2006 PolarHV™ Active 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 TO-251 DRAIN Single 89W 89W Tc 4.8A 65 ns SILICON N-Channel 1.4 Ω @ 2.4A, 10V 5.5V @ 50μA 620pF @ 25V 12.6nC @ 10V 26ns 24 ns 30V 500V 5A 4.8A Tc 10A 250 mJ 10V ±30V
IXFR24N50 IXFR24N50 IXYS 0.0000
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0.00000000 download Through Hole Tube 2000 HiPerFET™ yes Active 1 (Unlimited) 3 ROHS3 Compliant 3 AVALANCHE RATED ISOPLUS247™ Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 ISOLATED Single 250W 250W Tc 24A SWITCHING 65 ns SILICON N-Channel 230m Ω @ 12A, 10V 4V @ 4mA 4200pF @ 25V 160nC @ 10V 33ns 30 ns 20V 500V 22A 24A Tc 96A 10V ±20V
IXTA1R4N120P-TRL IXTA1R4N120P-TRL IXYS 0.0000
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0.00000000 28 Weeks Active TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 86W Tc N-Channel 13 Ω @ 700mA, 10V 4.5V @ 100μA 666pF @ 25V 24.8nC @ 10V 1.4A Tc 1200V 10V ±30V
IXTT1N250HV IXTT1N250HV IXYS 0.0000
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0.00000000 download 24 Weeks Surface Mount Tube 2012 Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free TO-268-3, D3Pak (2 Leads + Tab), TO-268AA not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 250W Tc 1.5A 2500V SILICON N-Channel 40 Ω @ 750mA, 10V 4V @ 250μA 1660pF @ 25V 41nC @ 10V 1.5A Tc 2500V 6A 10V ±20V
W1730JK240 W1730JK240 IXYS 0.0000
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0.00000000 8 Weeks Bulk Active 1 (Unlimited) ROHS3 Compliant DO-200AB, B-PUK Chassis Mount Standard Standard Recovery >500ns, > 200mA (Io) 30mA @ 2400V 1.2V @ 1000A -40°C~160°C 2400V 1730A
  • IXFN30N120P
    IXFN30N120P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 350m Ω @ 500mA, 10V ±30V 19000pF @ 25V 310nC @ 10V 1200V SOT-227-4, miniBLOC

    Price: 0.0000

    RFQ
  • IXFP60N25X3M
    IXFP60N25X3M IXYS

    MOSFET (Metal Oxide) N-Channel Tube 23m Ω @ 30A, 10V ±20V 3610pF @ 25V 50nC @ 10V 250V TO-220-3

    Price: 0.0000

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  • DSEP6-06BS-TRL
    DSEP6-06BS-TRL IXYS

    Standard Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 2.66V @ 6A -55°C~175°C 50μA @ 600V 2-Termination Tape & Reel (TR) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount

    Price: 0.0000

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  • VTO70-14IO7
    VTO70-14IO7 IXYS

    VTO70-14IO7 datasheet pdf and Thyristors - SCRs - Modules product details from IXYS stock available at Utmel

    Price: 0.0000

    RFQ
  • IXFH150N17T
    IXFH150N17T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 12m Ω @ 75A, 10V 9800pF @ 25V 155nC @ 10V TO-247-3

    Price: 4.8963

    RFQ
  • IXTY1N80P-TRL
    IXTY1N80P-TRL IXYS

    MOSFET (Metal Oxide) N-Channel 14 Ω @ 500mA, 10V ±30V 250pF @ 25V 9nC @ 10V 800V TO-252-3, DPak (2 Leads + Tab), SC-63

    Price: 0.0000

    RFQ
  • IXTQ152N085T
    IXTQ152N085T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 7m Ω @ 25A, 10V ±20V 5500pF @ 25V 114nC @ 10V TO-3P-3, SC-65-3

    Price: 0.0000

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  • IXFJ15N100Q
    IXFJ15N100Q IXYS

    Price: 0.0000

    RFQ
  • DMA50P1600HB
    DMA50P1600HB IXYS

    Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.3V @ 50A -55°C~175°C 40μA @ 1600V 3-Termination Tube TO-247-3 Through Hole

    Price: 5.5724

    RFQ
  • IXFA18N60X
    IXFA18N60X IXYS

    MOSFET (Metal Oxide) N-Channel Tube 230m Ω @ 9A, 10V ±30V 1440pF @ 25V 35nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

    RFQ
  • IXFH52N50P2
    IXFH52N50P2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 120m Ω @ 26A, 10V ±30V 6800pF @ 25V 113nC @ 10V TO-247-3

    Price: 0.0000

    RFQ
  • IXTY08N50D2
    IXTY08N50D2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 4.6 Ω @ 400mA, 0V ±20V 312pF @ 25V 12.7nC @ 5V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

    Price: 4.0750

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  • IXTV200N10TS
    IXTV200N10TS IXYS

    MOSFET (Metal Oxide) N-Channel Tube 5.5m Ω @ 50A, 10V ±30V 9400pF @ 25V 152nC @ 10V PLUS-220SMD

    Price: 0.0000

    RFQ
  • FMD40-06KC
    FMD40-06KC IXYS

    MOSFET (Metal Oxide) N-Channel Tube 70m Ω @ 20A, 10V ±20V 250nC @ 10V i4-Pac™-5

    Price: 0.0000

    RFQ
  • IXFC16N80P
    IXFC16N80P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 650m Ω @ 8A, 10V ±30V 4600pF @ 25V 71nC @ 10V ISOPLUS220™

    Price: 0.0000

    RFQ
  • IXFQ24N50Q
    IXFQ24N50Q IXYS

    MOSFET (Metal Oxide) N-Channel Tube 500V TO-3P-3, SC-65-3

    Price: 0.0000

    RFQ
  • IXTQ96N25T
    IXTQ96N25T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 29m Ω @ 500mA, 10V ±30V 6100pF @ 25V 114nC @ 10V TO-3P-3, SC-65-3

    Price: 10.9653

    RFQ
  • IXFR15N100Q3
    IXFR15N100Q3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 1.2 Ω @ 7.5A, 10V ±30V 3250pF @ 25V 64nC @ 10V 1000V TO-247-3

    Price: 17.4647

    RFQ
  • IXTK210P10T
    IXTK210P10T IXYS

    Price: 0.0000

    RFQ
  • IXFK20N120
    IXFK20N120 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 750m Ω @ 500mA, 10V ±30V 7400pF @ 25V 160nC @ 10V 1200V TO-264-3, TO-264AA

    Price: 0.0000

    RFQ
  • IXTH04N300P3HV
    IXTH04N300P3HV IXYS

    MOSFET (Metal Oxide) N-Channel Tube 190 Ω @ 200mA, 10V ±20V 283pF @ 25V 13nC @ 10V 3000V TO-247-3 Variant

    Price: 32.6164

    RFQ
  • DLA10IM800UC-TUB
    DLA10IM800UC-TUB IXYS

    Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.22V @ 10A -55°C~175°C 5μA @ 800V 2-Termination Tube TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount

    Price: 0.0000

    RFQ
  • IXFX20N120
    IXFX20N120 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 750m Ω @ 500mA, 10V ±30V 7400pF @ 25V 160nC @ 10V 1200V TO-247-3

    Price: 0.0000

    RFQ
  • MCB60I1200TZ-TUB
    MCB60I1200TZ-TUB IXYS

    SiCFET (Silicon Carbide) N-Channel 34m Ω @ 50A, 20V +20V, -5V 2790pF @ 1000V 160nC @ 20V 1.2kV TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

    Price: 0.0000

    RFQ
  • IXFV74N20P
    IXFV74N20P IXYS

    MOSFET (Metal Oxide) N-Channel Bulk 34m Ω @ 37A, 10V ±20V 3300pF @ 25V 107nC @ 10V TO-220-3, Short Tab

    Price: 0.0000

    RFQ
  • IXTU5N50P
    IXTU5N50P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 1.4 Ω @ 2.4A, 10V ±30V 620pF @ 25V 12.6nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

    Price: 0.0000

    RFQ
  • IXFR24N50
    IXFR24N50 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 230m Ω @ 12A, 10V ±20V 4200pF @ 25V 160nC @ 10V ISOPLUS247™

    Price: 0.0000

    RFQ
  • IXTA1R4N120P-TRL
    IXTA1R4N120P-TRL IXYS

    MOSFET (Metal Oxide) N-Channel 13 Ω @ 700mA, 10V ±30V 666pF @ 25V 24.8nC @ 10V 1200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

    RFQ
  • IXTT1N250HV
    IXTT1N250HV IXYS

    MOSFET (Metal Oxide) N-Channel Tube 40 Ω @ 750mA, 10V ±20V 1660pF @ 25V 41nC @ 10V 2500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

    Price: 0.0000

    RFQ
  • W1730JK240
    W1730JK240 IXYS

    Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.2V @ 1000A -40°C~160°C 30mA @ 2400V Bulk DO-200AB, B-PUK Chassis Mount

    Price: 0.0000

    RFQ
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