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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Current HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Min) Number of Channels Subcategory Qualification Status Max Power Dissipation Voltage Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Power Dissipation-Max Recovery Time Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic
IRF6631TRPBF IRF6631TRPBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2006 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 4.826mm RoHS Compliant Lead Free 13A No 5 LOW CONDUCTION LOSS DirectFET™ Isometric SQ No SVHC 506μm 3.95mm Surface Mount -40°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM R-XBCC-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN 42W 15 ns 1.8V 2.2W Ta 42W Tc 10A SWITCHING 0.0078Ohm 18 ns SILICON N-Channel 7.8m Ω @ 13A, 10V 2.35V @ 25μA 1450pF @ 15V 18nC @ 4.5V 18ns 4.9 ns 20V 30V 1.8 V 13A Ta 57A Tc 4.5V 10V ±20V
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0.00000000 download 15 Weeks Through Hole Tube 2008 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-220-3 Full Pack No SVHC Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 42W 16 ns 2V 42W Tc 35A SWITCHING 54 ns SILICON N-Channel 13.5m Ω @ 21A, 10V 4V @ 100μA 2998pF @ 50V 81nC @ 10V 33ns 37 ns 20V 100V 35A Tc 206 mJ 10V ±20V
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0.00000000 download 18 Weeks Through Hole Tube 2008 CoolMOS™ P6 Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 11 ns 600V 28W Tc 7.3A SWITCHING 0.6Ohm 33 ns SILICON N-Channel 600m Ω @ 2.4A, 10V 4.5V @ 200μA 557pF @ 100V 12nC @ 10V 7ns 14 ns 20V 4.9A Tc 18A 10V ±20V
AUIRFS4010-7P AUIRFS4010-7P Infineon Technologies 0.0000
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0.00000000 download 10 Weeks Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 6 EAR99 10.67mm ROHS3 Compliant Tin No 7 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-7, D2Pak (6 Leads + Tab) 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 SINGLE GULL WING 260 30 R-PSSO-G6 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 380W 19 ns 380W Tc 190A SWITCHING 0.004Ohm 100 ns SILICON N-Channel 4m Ω @ 110A, 10V 4V @ 250μA 9830pF @ 50V 230nC @ 10V 56ns 48 ns 20V 100V 190A Tc 330 mJ 10V ±20V
IRFI9530N IRFI9530N Infineon Technologies 0.0000
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0.00000000 Tube HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-220-3 Full Pack Through Hole MOSFET (Metal Oxide) TO-220AB Full-Pak P-Channel 300mOhm @ 4.6A, 10V 4V @ 250μA 860pF @ 25V 38nC @ 10V 7.7A Ta 100V
IRL3102S IRL3102S Infineon Technologies 0.0000
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0.00000000 Tube 1998 HEXFET® Obsolete 1 (Unlimited) EAR99 Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 89W Tc N-Channel 13m Ω @ 37A, 7V 700mV @ 250μA 2500pF @ 15V 58nC @ 4.5V 61A Tc 20V 4.5V 7V ±10V
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0.00000000 Tape & Reel (TR) 1997 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta 0.022Ohm 30V SILICON N-Channel 22m Ω @ 4A, 10V 1V @ 250μA 1200pF @ 25V 57nC @ 10V 6.7A 8.5A Ta 30V 4.5V 10V ±20V
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0.00000000 download 12 Weeks Through Hole Tube 2012 Active 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC 24.99mm 5.31mm 32MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power 1 TO-247AC DRAIN Single 517W 24 ns 3V 517W Tc 351 ns 70A 175°C SWITCHING 62 ns SILICON N-Channel 32m Ω @ 42A, 10V 5V @ 250μA 10774pF @ 50V 270nC @ 10V 16ns 45 ns 20V 300V 70A Tc 280A 10V ±20V
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0.00000000 Tube 2001 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 2.4W Ta 330W Tc SWITCHING 0.055Ohm 200V SILICON N-Channel 55m Ω @ 26A, 10V 5.5V @ 250μA 3430pF @ 25V 140nC @ 10V 44A 44A Tc 200V 180A 510 mJ 10V ±30V
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0.00000000 download 15 Weeks Through Hole Tube 2008 HEXFET® Not For New Designs 1 (Unlimited) 3 10.67mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 16.51mm 4.83mm 2.2Ohm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB Single 78W 14 ns 3V 78W Tc 110 ns 3.6A SWITCHING 24 ns SILICON N-Channel 2.2 Ω @ 2.2A, 10V 5V @ 250μA 810pF @ 25V 20nC @ 10V 22ns 17 ns 20V 500V 3.6A Tc 10V ±20V
IRFSL33N15D IRFSL33N15D Infineon Technologies 0.0000
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0.00000000 Tube 2000 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 3.8W Ta 170W Tc N-Channel 56m Ω @ 20A, 10V 5.5V @ 250μA 2020pF @ 25V 90nC @ 10V 33A Tc 150V 10V ±30V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 175°C -55°C ROHS3 Compliant Lead Free No 15 DirectFET™ Isometric L8 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 1 3.3W 17 ns 1.1mOhm DIRECTFET L8 3.3W Ta 125W Tc 200A 78 ns N-Channel 1.5mOhm @ 120A, 10V 4V @ 250μA 12320pF @ 25V 300nC @ 10V 43ns 39 ns 20V 60V 33A Ta 200A Tc 60V 12.32nF 10V ±20V 1.5 mΩ
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0.00000000 download Surface Mount Tube 2013 HEXFET®, StrongIRFET™ Discontinued 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) Single 230W 15 ns 3.7V 230W Tc 173A 82 ns N-Channel 3.3m Ω @ 100A, 10V 3.7V @ 150μA 7020pF @ 25V 210nC @ 10V 105ns 84 ns 20V 173A Tc 60V 6V 10V ±20V
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0.00000000 download Tape & Reel (TR) 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 92W Tc SWITCHING 0.0265Ohm 100V SILICON N-Channel 26.5m Ω @ 22A, 10V 4V @ 250μA 1770pF @ 25V 63nC @ 10V 36A 36A Tc 100V 140A 120 mJ 10V ±20V
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0.00000000 Surface Mount Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Lead Free 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm 7.5mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 140W 18 ns 4V 140W Tc 33 ns 75A SWITCHING 36 ns SILICON N-Channel 7.5m Ω @ 75A, 10V 4V @ 250μA 2840pF @ 25V 95nC @ 10V 150ns 92 ns 20V 55V 55V 4 V 75A Tc 10V ±20V
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0.00000000 download 12 Weeks Tape & Reel (TR) 2008 yes Obsolete 1 (Unlimited) 2 RoHS Compliant not_compliant ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING YES R-PSSO-G2 -55°C 1 SINGLE WITH BUILT-IN DIODE TO-252 DRAIN N-CHANNEL SWITCHING 0.6Ohm 650V METAL-OXIDE SEMICONDUCTOR SILICON 18A 142 mJ
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0.00000000 Tape & Reel (TR) 2006 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G8 Other Transistors 1 SINGLE WITH BUILT-IN DIODE 2.5W Ta SWITCHING 0.014Ohm 12V SILICON P-Channel 14m Ω @ 11.5A, 4.5V 900mV @ 250μA 3529pF @ 10V 38nC @ 4.5V 11.5A 11.5A Tc 12V 46A 1.8V 4.5V ±8V
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0.00000000 download 12 Weeks Through Hole Tube 2012 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 16.51mm 4.83mm 2MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 230W 19 ns 3V 230W Tc 30 ns 195A SWITCHING 78 ns SILICON N-Channel 2m Ω @ 100A, 10V 3.9V @ 150μA 7330pF @ 25V 225nC @ 10V 70ns 53 ns 20V 40V 3 V 195A Tc 6V 10V ±20V
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0.00000000 Surface Mount Tape & Reel (TR) 1997 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant Contains Lead 48A AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 110W Tc 48A SWITCHING 0.023Ohm SILICON N-Channel 23m Ω @ 29A, 10V 4V @ 250μA 1360pF @ 25V 60nC @ 10V 60ns 48A Tc 192A 220 mJ 10V ±20V
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0.00000000 download 12 Weeks Through Hole Tube 2009 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free Tin No 3 TO-220-3 No SVHC 9.02mm 4.826mm 1.95MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 230W 36 ns 1.9V 230W Tc 36 ns 260A SWITCHING 33 ns SILICON N-Channel 1.95m Ω @ 60A, 10V 2.35V @ 150μA 8420pF @ 15V 86nC @ 4.5V 170ns 60 ns 20V 30V 30V 1.9 V 120A 260A Tc 1050A 520 mJ 4.5V 10V ±20V
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0.00000000 download 18 Weeks Through Hole Tube 2007 CoolMOS™ C7 yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 600V 227W Tc 50A SWITCHING 0.04Ohm SILICON N-Channel 40m Ω @ 24.9A, 10V 4V @ 1.24mA 4340pF @ 400V 107nC @ 10V 50A Tc 211A 249 mJ 10V ±20V
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0.00000000 download Cut Tape (CT) 2008 CoolMOS™ yes Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 63W Tc SWITCHING 0.6Ohm 600V SILICON N-Channel 600m Ω @ 2.4A, 10V 3.5V @ 200μA 440pF @ 100V 20.5nC @ 10V 7.3A 7.3A Tc 600V 19A 133 mJ 10V ±20V
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0.00000000 Tube 2007 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 8-SO 2.5W Ta N-Channel 12mOhm @ 11A, 10V 2V @ 250μA 2530pF @ 15V 32nC @ 4.5V 11A Ta 30V 2.8V 10V ±12V
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