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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Power - Max Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition
IRF7834PBF IRF7834PBF Infineon Technologies 0.0000
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0.00000000 download 15 Weeks Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free 19A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING FET General Purpose Power 1 Single 2.5W 13.7 ns 2.5W Ta 19A SWITCHING 0.0045Ohm 18 ns SILICON N-Channel 4.5m Ω @ 19A, 10V 2.25V @ 250μA 3710pF @ 15V 44nC @ 4.5V 14.3ns 5 ns 20V 30V 2.25 V 19A Ta 25 mJ 4.5V 10V ±20V
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0.00000000 download Through Hole Tube 2007 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 80A AVALANCHE RATED TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN 260 40 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 Single 105W 105W Tc 80A SWITCHING 0.0079Ohm 39 ns SILICON N-Channel 7.9m Ω @ 43A, 10V 2.2V @ 55μA 6475pF @ 25V 134nC @ 10V 35ns 25 ns 16V 55V 80A Tc 320A 5V 10V ±16V
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0.00000000 download Tape & Reel (TR) 2010 Obsolete 1 (Unlimited) EAR99 RoHS Compliant TO-236-3, SC-59, SOT-23-3 unknown Surface Mount 150°C TJ MBTA42 YES Other Transistors 360mW Single NPN 0.36W NPN 50MHz 100nA ICBO 300V 500mA 40 @ 30mA 10V 500mV @ 2mA, 20mA 70MHz
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0.00000000 Tape & Reel (TR) 2007 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant FAST SWITCHING 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.035Ohm 20V SILICON N-Channel 35m Ω @ 4.1A, 4.5V 700mV @ 250μA 650pF @ 15V 22nC @ 4.5V 6.8A 6.8A Ta 20V 54A 2.7V 4.5V ±12V
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0.00000000 download Tube 2006 OptiMOS™ Discontinued 1 (Unlimited) 3 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 190W Tc 0.0113Ohm 55V SILICON N-Channel 8.5m Ω @ 52A, 10V 2V @ 125μA 2620pF @ 25V 105nC @ 10V 80A 80A Tc 55V 320A 370 mJ 4.5V 10V ±20V
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0.00000000 download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) EAR99 10.668mm ROHS3 Compliant Lead Free No 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB No SVHC 4.572mm 9.65mm 1.9MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 380W 81 ns 2.5V 380W Tc 300A 89 ns N-Channel 1.9m Ω @ 180A, 10V 2.5V @ 250μA 11270pF @ 50V 160nC @ 4.5V 540ns 170 ns 16V 60V 240A Tc 4.5V 10V ±16V
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0.00000000 download 18 Weeks Through Hole Tube 2003 CoolMOS™ yes Active Not Applicable ROHS3 Compliant TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 24W Tc 4A N-Channel 1.4 Ω @ 1.4A, 10V 3.5V @ 700μA 250pF @ 500V 10nC @ 10V Super Junction 4A Tc 800V 10V ±20V
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0.00000000 download Through Hole Tube 2007 HEXFET® Obsolete 1 (Unlimited) Through Hole 175°C -40°C 10.6426mm RoHS Compliant No 3 TO-220-3 No SVHC 16.51mm 4.82mm Through Hole -40°C~175°C TJ MOSFET (Metal Oxide) 1 Single 370W 31 ns 5V 37mOhm TO-220AB 370W Tc 56A 51 ns N-Channel 37mOhm @ 28A, 10V 5V @ 250μA 5510pF @ 25V 170nC @ 10V 30V 230V 276V 5 V 56A Tc 230V 5.51nF 10V ±30V 37 mΩ
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0.00000000 Tape & Reel (TR) 2001 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.1W Ta 120W Tc SWITCHING 0.009Ohm 30V SILICON N-Channel 9m Ω @ 15A, 10V 3V @ 250μA 2672pF @ 16V 41nC @ 5V 75A 90A Tc 30V 360A 382 mJ 4.5V 10V ±20V
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0.00000000 download Cut Tape (CT) 2005 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA SWITCHING 0.004Ohm 30V SILICON N-Channel 4m Ω @ 20A, 10V 2.32V @ 250μA 4310pF @ 15V 51nC @ 4.5V 20A 20A Ta 30V 160A 260 mJ
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0.00000000 download 12 Weeks Through Hole Tube 2007 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 160A No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.65mm 4.826mm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 40 FET General Purpose Power 1 DRAIN Single 230W 15 ns 230W Tc 120A SWITCHING 0.0042Ohm 40 ns SILICON N-Channel 4.2m Ω @ 75A, 10V 4V @ 150μA 4520pF @ 50V 120nC @ 10V 76ns 77 ns 20V 60V 120A Tc 620A 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2010 HEXFET® Obsolete 1 (Unlimited) 150°C -40°C 5.45mm RoHS Compliant No 7 DirectFET™ Isometric MX No SVHC 530μm 5.05mm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) 1 75W 16 ns 1.8V 3.6mOhm DIRECTFET™ MX 2.1W Ta 75W Tc 140A 19 ns N-Channel 2.5mOhm @ 23A, 10V 2.35V @ 100μA 4110pF @ 15V 42nC @ 4.5V 34ns 19 ns 20V 30V 1.8 V 23A Ta 140A Tc 30V 4.11nF 4.5V 10V ±20V 2.5 mΩ
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0.00000000 download Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.1W Ta SWITCHING 0.045Ohm 150V SILICON N-Channel 45m Ω @ 25A, 10V 5.5V @ 250μA 2520pF @ 25V 110nC @ 10V 41A 41A Tc 150V 164A 470 mJ 10V ±30V
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