Call us: +86 0755-82563503

Currency: $ US Dollar

Items : %s%s

Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
AUXHKGP4062D-E AUXHKGP4062D-E Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Active 1 (Unlimited) ROHS3 Compliant
BTS282Z E3180A BTS282Z E3180A Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Cut Tape (CT) 2001 TEMPFET® Obsolete 1 (Unlimited) TO-263-8, D2Pak (7 Leads + Tab), TO-263CA compliant Surface Mount -40°C~175°C TJ MOSFET (Metal Oxide) 300W Tc N-Channel 6.5m Ω @ 36A, 10V 2V @ 240μA 4800pF @ 25V 232nC @ 10V Temperature Sensing Diode 80A Tc 49V 4.5V 10V ±20V
IPS65R650CEAKMA1 IPS65R650CEAKMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 18 Weeks Tube 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead TO-251-3 Short Leads, IPak, TO-251AA Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 650V 86W Tc SWITCHING 0.65Ohm SILICON N-Channel 650m Ω @ 2.1A, 10V 3.5V @ 210μA 440pF @ 100V 23nC @ 10V 10.1A Tc 700V 18A 142 mJ 10V ±20V
AUIRF3710Z AUIRF3710Z Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 13 Weeks Through Hole Tube 2010 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.6426mm RoHS Compliant No 3 TO-220-3 No SVHC 9.017mm 4.82mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB Single 160W 17 ns 2V 160W Tc 59A SWITCHING 41 ns SILICON N-Channel 18m Ω @ 35A, 10V 4V @ 250μA 2900pF @ 25V 120nC @ 10V 77ns 56 ns 20V 100V 2 V 59A Tc 240A 200 mJ 10V ±20V
IPSH4N03LA G IPSH4N03LA G Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tube 2008 OptiMOS™ Obsolete 3 (168 Hours) 3 EAR99 RoHS Compliant LOGIC LEVEL COMPATIBLE TO-251-3 Stub Leads, IPak compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 94W Tc SWITCHING 0.0044Ohm 25V SILICON N-Channel 4.4m Ω @ 60A, 10V 2V @ 40μA 3200pF @ 15V 26nC @ 5V 90A 90A Tc 25V 360A 150 mJ 4.5V 10V ±20V
IRLR7843TR IRLR7843TR Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tape & Reel (TR) 2003 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 140W Tc SWITCHING 0.0033Ohm 30V SILICON N-Channel 3.3m Ω @ 15A, 10V 2.3V @ 250μA 4380pF @ 15V 50nC @ 4.5V 30A 161A Tc 30V 620A 1440 mJ 4.5V 10V ±20V
IRL2203NPBF IRL2203NPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 14 Weeks Through Hole Tube 2001 HEXFET® Not For New Designs 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Contains Lead, Lead Free Tin 116A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 2.54mm 15.24mm 4.69mm 7MOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 130W 11 ns 1V 180W Tc 84 ns 116A SWITCHING 23 ns SILICON N-Channel 7m Ω @ 60A, 10V 1V @ 250μA 3290pF @ 25V 60nC @ 4.5V 160ns 66 ns 16V 30V 30V 1 V 75A 116A Tc 400A 290 mJ 4.5V 10V ±16V
IRFR7746PBF IRFR7746PBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount, Through Hole Tube 2006 HEXFET® Discontinued 1 (Unlimited) EAR99 6.73mm ROHS3 Compliant Lead Free 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC not_compliant 2.39mm 6.22mm Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - with Nickel (Ni) barrier NOT SPECIFIED NOT SPECIFIED 1 Single 7.9 ns 3.7V 99W Tc 56A 34 ns N-Channel 11.2m Ω @ 35A, 10V 3.7V @ 100μA 3107pF @ 25V 89nC @ 10V 30ns 21 ns 20V 56A Tc 75V 6V 10V ±20V
IRFB17N20D IRFB17N20D Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Tube 2000 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) TO-220AB 3.8W Ta 140W Tc N-Channel 170mOhm @ 9.8A, 10V 5.5V @ 250μA 1100pF @ 25V 50nC @ 10V 16A Tc 200V 10V ±30V
IRFR13N20DTRLP IRFR13N20DTRLP Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 14 Weeks Tape & Reel (TR) 2005 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.235Ohm 200V SILICON N-Channel 235m Ω @ 8A, 10V 5.5V @ 250μA 830pF @ 25V 38nC @ 10V 13A 13A Tc 200V 52A 130 mJ 10V ±30V
IPB60R105CFD7ATMA1 IPB60R105CFD7ATMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 18 Weeks CoolMOS™ CFD7 Active TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 106W Tc N-Channel 105m Ω @ 9.3A, 10V 4.5V @ 470μA 1752pF @ 400V 42nC @ 10V 21A Tc 650V 10V ±20V
IPT019N08N5ATMA1 IPT019N08N5ATMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 18 Weeks OptiMOS™5 Active 8-PowerSFN Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 231W Tc N-Channel 1.9m Ω @ 150A, 10V 3.8V @ 159μA 9200pF @ 40V 127nC @ 10V 32A Ta 247A Tc 80V 6V 10V ±20V
SPI20N65C3XKSA1 SPI20N65C3XKSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Through Hole Tube 2005 CoolMOS™ Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 10 ns 190mOhm PG-TO262-3-1 208W Tc 20.7A 67 ns N-Channel 190mOhm @ 13.1A, 10V 3.9V @ 1mA 2400pF @ 25V 114nC @ 10V 5ns 4.5 ns 20V 20.7A Tc 650V 2.4nF 10V ±20V 190 mΩ
IPD60R280P7ATMA1 IPD60R280P7ATMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE 53W Tc SWITCHING 0.28Ohm 600V SILICON N-Channel 280m Ω @ 3.8A, 10V 4V @ 190μA 761pF @ 400V 18nC @ 10V 12A Tc 600V 36A 38 mJ 10V ±20V
IPAW60R600P7SE8228XKSA1 IPAW60R600P7SE8228XKSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 18 Weeks CoolMOS™ P7 Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) 21W Tc N-Channel 600m Ω @ 1.7A, 10V 4V @ 80μA 363pF @ 400V 9nC @ 10V 6A Tc 600V 10V ±20V
IRF7423TR IRF7423TR Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Tape & Reel (TR) HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount MOSFET (Metal Oxide) N-Channel 30V
BSC018NE2LSATMA1 BSC018NE2LSATMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 26 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 69W 25V 2.5W Ta 69W Tc 29A SWITCHING 0.0023Ohm SILICON N-Channel 1.8m Ω @ 30A, 10V 2V @ 250μA 2800pF @ 12V 39nC @ 10V 4.4ns 20V 29A Ta 100A Tc 400A 4.5V 10V ±20V
IPD80R600P7ATMA1 IPD80R600P7ATMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 60W Tc SWITCHING 0.6Ohm 800V SILICON N-Channel 600m Ω @ 3.4A, 10V 3.5V @ 170μA 570pF @ 500V 20nC @ 10V 8A Tc 800V 22A 20 mJ 10V ±20V
IPB073N15N5ATMA1 IPB073N15N5ATMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 13 Weeks Tape & Reel (TR) 2004 OptiMOS™-5 yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 214W Tc SWITCHING 0.0073Ohm 150V SILICON N-Channel 7.3m Ω @ 57A, 10V 4.6V @ 160μA 4700pF @ 75V 61nC @ 10V 114A 114A Tc 150V 456A 130 mJ 8V 10V ±20V
IRFH3702TR2PBF IRFH3702TR2PBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Cut Tape (CT) 2010 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 2.9972mm RoHS Compliant Lead Free No 8 8-PowerVDFN No SVHC 939.8μm 2.9972mm 7.1MOhm Surface Mount MOSFET (Metal Oxide) 2.8W 1 Single 2.8W 9.6 ns 7.1mOhm 8-PQFN (3x3) 26 ns 16A 11 ns N-Channel 7.1mOhm @ 16A, 10V 2.35V @ 25μA 1510pF @ 15V 14nC @ 4.5V 15ns 5.8 ns 20V 30V 1.8 V 16A Ta 42A Tc 30V 1.51nF 7.1 mΩ
AUIRFS3006-7P AUIRFS3006-7P Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 16 Weeks Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 6 EAR99 10.67mm ROHS3 Compliant Tin No 7 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 SINGLE GULL WING 260 30 R-PSSO-G6 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-263CB DRAIN 375W 14 ns 2V 375W Tc 240A SWITCHING 118 ns SILICON N-Channel 2.1m Ω @ 168A, 10V 4V @ 250μA 8850pF @ 50V 300nC @ 10V 61ns 69 ns 20V 60V 240A Tc 303 mJ 10V ±20V
IPC60R190E6X1SA1 IPC60R190E6X1SA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 13 Weeks Active 1 (Unlimited) ROHS3 Compliant
AUIRFR8403TRL AUIRFR8403TRL Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 16 Weeks Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED IRFR8403 YES FET General Purpose Power Single 99W Tc N-Channel 3.1m Ω @ 76A, 10V 3.9V @ 100μA 3171pF @ 25V 99nC @ 10V 100A 100A Tc 40V 10V ±20V
IRFB3607PBF IRFB3607PBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6426mm ROHS3 Compliant Lead Free Tin No 3 TO-220-3 No SVHC 9.017mm 4.82mm 9MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 140W 16 ns 4V 140W Tc 50 ns 80A SWITCHING 43 ns SILICON N-Channel 9m Ω @ 46A, 10V 4V @ 100μA 3070pF @ 50V 84nC @ 10V 110ns 96 ns 20V 75V 75V 4 V 80A Tc 10V ±20V
IPP60R280E6XKSA1 IPP60R280E6XKSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 12 Weeks Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 104W Tc SWITCHING 0.28Ohm 600V SILICON N-Channel 280m Ω @ 6.5A, 10V 3.5V @ 430μA 950pF @ 100V 43nC @ 10V 13.8A Tc 600V 40A 284 mJ 10V ±20V
IRF3707STRLPBF IRF3707STRLPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C RoHS Compliant No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 87W 8.5 ns 12.5mOhm D2PAK 87W Tc 62A 11.8 ns N-Channel 12.5mOhm @ 15A, 10V 3V @ 250μA 1990pF @ 15V 19nC @ 4.5V 78ns 3.3 ns 20V 30V 62A Tc 30V 1.99nF 4.5V 10V ±20V 12.5 mΩ
AUIRF6218S AUIRF6218S Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 8 Weeks Surface Mount Tube 2015 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free No 3 AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 Other Transistors 1 SINGLE WITH BUILT-IN DIODE DRAIN 250W 21 ns 250W Tc 27A SWITCHING 35 ns SILICON P-Channel 150m Ω @ 16A, 10V 5V @ 250μA 2210pF @ 25V 110nC @ 10V 70ns 30 ns 20V -150V 27A Tc 150V 10V ±20V
IRFIZ34NPBF IRFIZ34NPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6172mm ROHS3 Compliant Lead Free 20A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 Full Pack No SVHC 9.8mm 4.826mm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 1 TO-220AB ISOLATED Single 31W 7 ns 4V 37W Tc 86 ns 21A SWITCHING 0.04Ohm 2.5kV 31 ns SILICON N-Channel 40m Ω @ 11A, 10V 4V @ 250μA 700pF @ 25V 34nC @ 10V 49ns 40 ns 20V 55V 55V 20 V 21A Tc 10V ±20V
IPP114N03L G IPP114N03L G Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tube 2008 OptiMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-220-3 compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE 260 NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 38W Tc SWITCHING 0.0114Ohm 30V SILICON N-Channel 11.4m Ω @ 30A, 10V 2.2V @ 250μA 1500pF @ 15V 14nC @ 10V 30A 30A Tc 30V 210A 30 mJ 4.5V 10V ±20V
IRF7241 IRF7241 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Tube 2004 HEXFET® Obsolete 1 (Unlimited) 8 Non-RoHS Compliant ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.041Ohm 40V SILICON P-Channel 41m Ω @ 6.2A, 10V 3V @ 250μA 3220pF @ 25V 80nC @ 10V 6.2A 6.2A Ta 40V 4.5V 10V ±20V
Settings Need Help?
Top FAQ's

How can I quickly find answers to my questions?

Please visit the Help & Support area of our website to find information regarding ordering, shipping, delivery and more.

What is my Order Status?

Registered users can track orders from their account dropdown, or click here. *Order Status may take 12 hours to update after initial order is placed.

How do I return product?

Users can begin the returns process by starting with our Returns Page.

How do I find price and availability?

Quotes can be created by registered users in myLists.

How do I create a 'HK JDW' Account?

Visit the Registration Page and enter the required information. You will receive an email confirmation when your registration is complete.

United Kingdom/GBP Summary
Fast Shipping Fast Delivery

Orders are typically delivered to United Kingdom within 48 hours depending on location.

Free Shipping Free Shipping

Free delivery to United Kingdom on orders of £33 or more. A delivery charge of £12 will be billed on all orders less than £33.

Incoterms Incoterms

DDP (Duty and customs paid by HK JDW)

Payment Options Payment Types

Credit account for qualified institutions and businesses

Payment in Advance by Wire Transfer

Visa Mastercard American Express PayPal Apple Pay Google Pay

Marketplace Marketplace Product

More Products From Fully Authorized Partners

Average Time to Ship 1-3 Days, extra ship charges may apply. Please see product page, cart, and checkout for actual ship speed.

Incoterms: CPT (Duty, customs, and applicable VAT/Tax due at time of delivery)

For more information visit Help & Support