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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
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0.00000000 download Surface Mount Tube 2009 Automotive, AEC-Q101, HEXFET® Discontinued 1 (Unlimited) 6 EAR99 10.67mm ROHS3 Compliant Lead Free Tin No 7 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-7, D2Pak (6 Leads + Tab) No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 SINGLE GULL WING 260 30 R-PSSO-G6 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 370W 53 ns 1V 370W Tc 190A SWITCHING 0.0039Ohm 110 ns SILICON N-Channel 3.9m Ω @ 110A, 10V 2.5V @ 250μA 11490pF @ 50V 140nC @ 4.5V 160ns 87 ns 16V 100V 190A Tc 320 mJ 4.5V 10V ±16V
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0.00000000 download 18 Weeks Through Hole Tube 2015 CoolMOS™ C7 yes Active 1 (Unlimited) 4 ROHS3 Compliant Lead Free TO-247-4 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T4 1 SINGLE WITH BUILT-IN DIODE Halogen Free 600V 162W Tc 35A SWITCHING 0.06Ohm SILICON N-Channel 60m Ω @ 15.9A, 10V 4V @ 800μA 2850pF @ 400V 68nC @ 10V 35A Tc 159 mJ 10V ±20V
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0.00000000 download Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 107W Tc N-Channel 19m Ω @ 33A, 10V 1V @ 250μA 1600pF @ 25V 50nC @ 4.5V 55A Tc 30V 4.5V 10V ±16V
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0.00000000 download 14 Weeks Tape & Reel (TR) 2005 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.235Ohm 200V SILICON N-Channel 235m Ω @ 8A, 10V 5.5V @ 250μA 830pF @ 25V 38nC @ 10V 13A 13A Tc 200V 52A 130 mJ 10V ±30V
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0.00000000 download Through Hole Tube 2003 OptiMOS™ Discontinued 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 80A AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-262-3 Long Leads, I2Pak, TO-262AA unknown Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 150W Tc 80A SWITCHING 0.0095Ohm SILICON N-Channel 6.2m Ω @ 80A, 10V 2V @ 80μA 2530pF @ 25V 68nC @ 10V 135A 80A Tc 320A 240 mJ 4.5V 10V ±20V
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0.00000000 Tube HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-261-4, TO-261AA Through Hole MOSFET (Metal Oxide) N-Channel 3.3m Ω @ 140A, 10V 4V @ 250μA 5730pF @ 25V 200nC @ 10V 75A Ta 30V
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