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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IRFL4105 IRFL4105 Infineon Technologies 0.0000
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0.00000000 download Tube 1999 HEXFET® Obsolete 1 (Unlimited) 4 EAR99 Non-RoHS Compliant TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL GULL WING 260 30 YES R-PDSO-G4 Not Qualified 1 SINGLE DRAIN 1W Ta 0.045Ohm 55V SILICON N-Channel 45m Ω @ 3.7A, 10V 4V @ 250μA 660pF @ 25V 35nC @ 10V 3.7A 3.7A Ta 55V 10V ±20V
IRF630NSPBF IRF630NSPBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tube 1997 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Lead Free Tin 9.3A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm 300mOhm Surface Mount -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 82W 7.9 ns 4V 82W Tc 176 ns 9.3A SWITCHING 27 ns SILICON N-Channel 300m Ω @ 5.4A, 10V 4V @ 250μA 575pF @ 25V 35nC @ 10V 14ns 15 ns 20V 200V 4 V 9.3A Tc 94 mJ 10V ±20V
IRL540NSTRL IRL540NSTRL Infineon Technologies 0.0000
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0.00000000 Surface Mount Cut Tape (CT) 1998 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 175°C -55°C Non-RoHS Compliant Contains Lead 36A 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 Not Qualified 3.8W 1 SINGLE WITH BUILT-IN DIODE DRAIN 36A SWITCHING N-Channel 44m Ω @ 18A, 10V 2V @ 250μA 1800pF @ 25V 74nC @ 5V 81ns 36A Tc 120A
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 230W 230W Tc 120A SWITCHING 0.0058Ohm SILICON N-Channel 5.8m Ω @ 75A, 10V 4V @ 150μA 4750pF @ 50V 110nC @ 10V 64ns 65 ns 20V 75V 120A Tc 480A 10V ±20V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 6.35mm ROHS3 Compliant Lead Free No 5 DirectFET™ Isometric MX 506μm 5.05mm 2.1MOhm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 89W 18 ns 2.8W Ta 89W Tc 29mA SWITCHING 13 ns SILICON N-Channel 2.1m Ω @ 29A, 10V 2.4V @ 100μA 3890pF @ 13V 44nC @ 4.5V 26ns 9.6 ns 20V 25V 29A 29A Ta 166A Tc 234A 4.5V 10V ±20V
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0.00000000 10 Weeks Active 1 (Unlimited) ROHS3 Compliant
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0.00000000 download 12 Weeks Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 ROHS3 Compliant Lead Free 75A No 3 TO-220-3 No SVHC 8.77mm 14mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 250 30 FET General Purpose Power 1 TO-220AB DRAIN Single 200W 35 ns 5.5V 3.8W Ta 200W Tc 110 ns 75A SWITCHING 41 ns SILICON N-Channel 14m Ω @ 45A, 10V 5.5V @ 250μA 6160pF @ 25V 170nC @ 10V 130ns 38 ns 20V 100V 100V 5.5 V 75A Tc 10V ±20V
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0.00000000 download Tube 2006 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL SINGLE GULL WING 260 30 YES R-PSSO-G3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 140W Tc SWITCHING 0.018Ohm 100V SILICON N-Channel 18m Ω @ 33A, 10V 4V @ 250μA 2930pF @ 25V 100nC @ 10V 42A 42A Tc 100V 220A 150 mJ 10V ±20V
IPP200N15N3GHKSA1 IPP200N15N3GHKSA1 Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2008 OptiMOS™ Obsolete 1 (Unlimited) 175°C -55°C RoHS Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 1 1 150W PG-TO220-3 150W Tc 50A N-Channel 20mOhm @ 50A, 10V 4V @ 90μA 1820pF @ 75V 31nC @ 10V 20V 50A Tc 150V 1.82nF 8V 10V ±20V 20 mΩ
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free No 13 DirectFET™ Isometric L6 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) FET General Purpose Power 1 Single 3.3W 19 ns 3.3W Ta 94W Tc 148A 54 ns N-Channel 2.2m Ω @ 89A, 10V 4V @ 250μA 8075pF @ 50V 220nC @ 10V 104ns 77 ns 20V 28A Ta 148A Tc 60V 10V ±20V
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED S-PDSO-N3 1 DRAIN Halogen Free Single 69W 10 ns 80V 69W Tc 40A SWITCHING 0.0075Ohm 19 ns SILICON N-Channel 7.5m Ω @ 20A, 10V 3.8V @ 36μA 2080pF @ 40V 29.5nC @ 10V 4ns 4 ns 20V 40A Tc 6V 10V ±20V
IRFH7923TRPBF IRFH7923TRPBF Infineon Technologies 0.0000
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0.00000000 download Cut Tape (CT) 2008 HEXFET® Obsolete 2 (1 Year) 8-PowerVDFN Surface Mount MOSFET (Metal Oxide) N-Channel 8.7m Ω @ 15A, 10V 2.35V @ 25μA 1095pF @ 15V 13nC @ 4.5V 15A Ta 33A Tc 30V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free 42A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 16MOhm Surface Mount -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 110W 16 ns 4V 110W Tc 47 ns 42A SWITCHING 44 ns SILICON N-Channel 16m Ω @ 32A, 10V 4V @ 100μA 2190pF @ 25V 75nC @ 10V 65ns 29 ns 20V 75V 75V 4 V 42A Tc 10V ±20V
IPU039N03LGXK IPU039N03LGXK Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2011 OptiMOS™ Obsolete 1 (Unlimited) 175°C -55°C RoHS Compliant 3 TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) PG-TO251-3 94W Tc 50A N-Channel 3.9mOhm @ 30A, 10V 2.2V @ 250μA 5300pF @ 15V 51nC @ 10V 50A Tc 30V 5.3nF 4.5V 10V ±20V 3.9 mΩ
IRFB4410ZPBF IRFB4410ZPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6426mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 19.8mm 4.82mm 9MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 250 30 1 FET General Purpose Power 1 TO-220AB DRAIN Single 230W 16 ns 2V 230W Tc 57 ns 96A 175°C SWITCHING 43 ns SILICON N-Channel 9m Ω @ 58A, 10V 4V @ 150μA 4820pF @ 50V 120nC @ 10V 52ns 57 ns 20V 100V 100V 4 V 97A 97A Tc 242 mJ 10V ±20V
IPW60R190P6FKSA1 IPW60R190P6FKSA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Through Hole Tube 2008 CoolMOS™ P6 Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-247-3 No SVHC Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE 15 ns 600V 151W Tc 20.2A SWITCHING 0.19Ohm 45 ns SILICON N-Channel 190m Ω @ 7.6A, 10V 4.5V @ 630μ 1750pF @ 100V 11nC @ 10V 8ns 7 ns 20V 20.2A Tc 57A 419 mJ 10V ±20V
IRF6633TR1PBF IRF6633TR1PBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2006 HEXFET® Obsolete 1 (Unlimited) 150°C -40°C 6.35mm RoHS Compliant Lead Free 16A No 5 DirectFET™ Isometric MP No SVHC 676μm 5.05mm 5.6MOhm Surface Mount -40°C~150°C TJ 20V MOSFET (Metal Oxide) 1 89W 9.7 ns 1.8V 9.4mOhm DIRECTFET™ MP 2.3W Ta 89W Tc 13A 12 ns N-Channel 5.6mOhm @ 16A, 10V 2.2V @ 250μA 1250pF @ 10V 17nC @ 4.5V 31ns 4.3 ns 20V 20V 1.8 V 16A Ta 59A Tc 20V 1.25nF 4.5V 10V ±20V 5.6 mΩ
IPC60R075CPX1SA1 IPC60R075CPX1SA1 Infineon Technologies 0.0000
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0.00000000 20 Weeks Active 1 (Unlimited) ROHS3 Compliant
IRF9393PBF IRF9393PBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 5mm ROHS3 Compliant No 8 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING Other Transistors 1 SINGLE WITH BUILT-IN DIODE 2.5W 16 ns 2.5W Ta 9.2A SWITCHING 55 ns SILICON P-Channel 13.3m Ω @ 9.2A, 20V 2.4V @ 25μA 1110pF @ 25V 38nC @ 10V 44ns 49 ns 25V -30V 9.2A Ta 30V 75A 10V 20V ±25V
IRF7353D1TR IRF7353D1TR Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 2004 FETKY™ Obsolete 1 (Unlimited) Non-RoHS Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 8-SO 2W Ta N-Channel 32mOhm @ 5.8A, 10V 1V @ 250μA 650pF @ 25V 33nC @ 10V Schottky Diode (Isolated) 6.5A Ta 30V 4.5V 10V ±20V
IPS70R360P7SAKMA1 IPS70R360P7SAKMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Tube 2014 CoolMOS™ P7 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) 59.5W Tc N-Channel 360m Ω @ 3A, 10V 3.5V @ 150μA 517pF @ 400V 16.4nC @ 10V 12.5A Tc 700V 10V ±16V
IRFS7430PBF IRFS7430PBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tube 2006 HEXFET®, StrongIRFET™ Discontinued 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 1 FET General Purpose Power Single 375W 32 ns 3.9V 375W Tc 195A 160 ns N-Channel 1.2m Ω @ 100A, 10V 3.9V @ 250μA 14240pF @ 25V 460nC @ 10V 105ns 100 ns 20V 195A Tc 40V 6V 10V ±20V
SPD100N03S2L04T SPD100N03S2L04T Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2003 OptiMOS™ Discontinued 1 (Unlimited) ROHS3 Compliant Lead Free 100A TO-252-5, DPak (4 Leads + Tab), TO-252AD Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) PG-TO252-5 150W Tc 100A N-Channel 4.2mOhm @ 50A, 10V 2V @ 100μA 3320pF @ 25V 89.7nC @ 10V 17ns 100A Tc 30V 3.32nF 4.5V 10V ±20V 4.2 mΩ
IRFSL3206PBF IRFSL3206PBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 210A No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.65mm 4.826mm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W 19 ns 300W Tc 120A SWITCHING 55 ns SILICON N-Channel 3m Ω @ 75A, 10V 4V @ 150μA 6540pF @ 50V 170nC @ 10V 82ns 83 ns 20V 60V 120A Tc 840A 10V ±20V
IPP90R1K0C3XKSA1 IPP90R1K0C3XKSA1 Infineon Technologies 0.0000
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0.00000000 download 6 Weeks Tube 2008 CoolMOS™ Last Time Buy 1 (Unlimited) 3 ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 89W Tc SWITCHING 1Ohm 900V SILICON N-Channel 1 Ω @ 3.3A, 10V 3.5V @ 370μA 850pF @ 100V 34nC @ 10V 5.7A 5.7A Tc 900V 12A 97 mJ 10V ±20V
IPD090N03LGATMA1 IPD090N03LGATMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 DRAIN Single 42W 4 ns 42W Tc 40A SWITCHING 15 ns SILICON N-Channel 9m Ω @ 30A, 10V 2.2V @ 250μA 1600pF @ 15V 15nC @ 10V 3ns 2.6 ns 20V 30V 40A Tc 280A 70 mJ 4.5V 10V ±20V
SPB80P06PGATMA1 SPB80P06PGATMA1 Infineon Technologies 0.0000
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0.00000000 download 13 Weeks Surface Mount Tape & Reel (TR) 1999 SIPMOS® no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead -80A 3 AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.4mm Surface Mount -55°C~175°C TJ -60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 1 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 340W 24 ns -3V -60V 340W Tc -80A 175°C 56 ns SILICON P-Channel 23m Ω @ 64A, 10V 4V @ 5.5mA 5033pF @ 25V 173nC @ 10V 18ns 30 ns 20V -60V 80A Tc 60V 10V ±20V
IPU60R2K0C6AKMA1 IPU60R2K0C6AKMA1 Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE 600V 22.3W Tc 2.4A SWITCHING 2Ohm SILICON N-Channel 2 Ω @ 760mA, 10V 3.5V @ 60μA 140pF @ 100V 6.7nC @ 10V 2.4A Tc 6A 11 mJ 10V ±20V
IRFU7746PBF IRFU7746PBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2014 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA 11.2Ohm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 99W Tc 56A N-Channel 11.2m Ω @ 35A, 10V 3.7V @ 100μA 3107pF @ 25V 89nC @ 10V 56A Tc 75V 6V 10V ±20V
IPD230N06NGBTMA1 IPD230N06NGBTMA1 Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2011 OptiMOS™ yes Obsolete 1 (Unlimited) 2 EAR99 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 260 40 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA 100W Tc SWITCHING 0.023Ohm 60V SILICON N-Channel 23m Ω @ 30A, 10V 4V @ 50μA 1100pF @ 30V 31nC @ 10V 30A 30A Tc 60V 120A 150 mJ 10V ±20V
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