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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Technology Operating Mode Input Type Current JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Max Power Dissipation Power - Max Voltage Number of Elements Configuration Diode Type Application Number of Phases Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Forward Current Case Connection Halogen Free Polarity/Channel Type Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Supplier Device Package Input Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Reverse Voltage Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Rise Time-Max Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Gate to Source Voltage (Vgs) FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Turn Off Time-Nom (toff) IGBT Type NTC Thermistor Gate-Emitter Voltage-Max Input Capacitance (Cies) @ Vce Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Gate-Emitter Thr Voltage-Max Fall Time-Max (tf) Test Condition Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Current - Max Voltage - Peak Reverse (Max) Resistance @ If, F Minority Carrier Lifetime-Nom Diode Forward Resistance-Max Diode Res Test Current Diode Res Test Frequency Diode Capacitance-Nom
IRG5U100HF06A IRG5U100HF06A Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 8-SO 3.5W Ta N-Channel 7.5mOhm @ 15A, 4.5V 1V @ 250μA 7300pF @ 16V 86nC @ 5V 17.6A Ta 30V 4.5V ±12V
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