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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type HTS Code Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Max Power Dissipation Power - Max Reference Standard Diode Element Material Number of Elements Configuration Diode Type Application Number of Phases JEDEC-95 Code Output Current Polarity Analog IC - Other Type Forward Current Forward Voltage Case Connection Halogen Free Polarity/Channel Type Power Dissipation-Max (Abs) Collector Current-Max (IC) Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Input Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Diode Configuration Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Reverse Voltage Recovery Time Frequency Band Max Collector Current Diode Capacitance-Max Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Transition Frequency Collector-Emitter Voltage-Max Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Turn Off Time-Nom (toff) IGBT Type NTC Thermistor Gate-Emitter Voltage-Max Input Capacitance (Cies) @ Vce VCEsat-Max Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Gate-Emitter Thr Voltage-Max Test Condition Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy hFE Min Minority Carrier Lifetime-Nom Diode Forward Resistance-Max DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2)
FD400R33KF2CNOSA1 FD400R33KF2CNOSA1 Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 1999 SIPMOS® yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-220-3 No SVHC Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 42W 16 ns -60V 42W Tc 8.8A 48 ns SILICON P-Channel 300m Ω @ 6.2A, 10V 4V @ 250μA 420pF @ 25V 15nC @ 10V 46ns 14 ns 20V 8.8A Tc 60V 70 mJ 10V ±20V
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0.00000000 download 14 Weeks Tube 2008 yes Last Time Buy 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ Standard e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 313W 1 SINGLE TO-247AC COLLECTOR N-CHANNEL POWER CONTROL SILICON 86 ns 3.6V @ 15V, 25A 862 ns NPT 1200V 46A 800V, 25A, 22 Ω, 15V 225nC 84A 45ns/730ns 3.7mJ
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0.00000000 download 14 Weeks Tube TrenchStop™ Active Not Applicable ROHS3 Compliant TO-247-4 Through Hole -40°C~175°C TJ Standard 500W 255ns 2.15V @ 15V, 40A Trench Field Stop 1200V 80A 600V, 40A, 9 Ω, 15V 285nC 160A 27ns/315ns 1.45mJ (on), 1.55mJ (off)
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0.00000000 download 14 Weeks Through Hole Bulk 2004 Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Contains Lead, Lead Free 40A No 3 TO-247-3 No SVHC Through Hole 38.000013g -55°C~150°C TJ 1.2kV Standard Insulated Gate BIP Transistors 300W 1 TO-247AD N-CHANNEL Single 300W 40A 1.2kV 4.85V POWER CONTROL SILICON 30ns 3.05V 70 ns 4.85V @ 15V, 40A 228 ns NPT 20V 1200V 6V 600V, 20A, 5 Ω, 15V 169nC 120A 850μJ (on), 425μJ (off)
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0.00000000 Obsolete Not Applicable
IRDM983-025MB IRDM983-025MB Infineon Technologies 0.0000
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0.00000000 2016 Obsolete 3 (168 Hours) EAR99 Non-RoHS Compliant 8542.39.00.01 NOT SPECIFIED NOT SPECIFIED AC MOTOR CONTROLLER
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0.00000000 download 2013 no Obsolete 1 (Unlimited) 10 EAR99 Non-RoHS Compliant compliant UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 10 NO R-XUFM-X10 150°C Not Qualified 2 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED N-CHANNEL 1250A SILICON 1200V 460 ns 1210 ns
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0.00000000 16 Weeks Active 1 (Unlimited) ROHS3 Compliant
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0.00000000 download Surface Mount Tube 2004 SIPMOS® no Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant No 3 AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING 4 R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 10 ns 75W Tc 9.5A 0.4Ohm 200V 55 ns SILICON N-Channel 400m Ω @ 6A, 10V 4V @ 1mA 530pF @ 25V 40ns 30 ns 20V 9.5A Tc 200V 120 mJ 10V ±20V
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0.00000000 download Surface Mount Bulk 2005 yes Discontinued 1 (Unlimited) 1 EAR99 Non-RoHS Compliant Contains Lead Die Surface Mount 8541.10.00.40 UPPER NO LEAD NOT SPECIFIED NOT SPECIFIED 1 R-XUUC-N1 150°C Not Qualified SILICON 1 SINGLE Standard FAST SOFT RECOVERY 1 2A Halogen Free 1.2kV Standard Recovery >500ns, > 200mA (Io) 27μA @ 1200V 2.1V @ 2A -55°C~150°C 1.2kV 2A 1200V 2A DC 1.2kV
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0.00000000 16 Weeks Active 1 (Unlimited) ROHS3 Compliant
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0.00000000 download Surface Mount Tape & Reel (TR) 2008 Not For New Designs 1 (Unlimited) 6 EAR99 150°C -65°C 2mm ROHS3 Compliant Lead Free Tin No 6 BUILT-IN BIAS RESISTOR RATIO 1 6-VSSOP, SC-88, SOT-363 800μm 1.25mm Surface Mount e3 GULL WING BCR08PN 250mW 2 NPN, PNP Halogen Free Dual 250mW 100mA 50V 300mV SWITCHING 1 NPN, 1 PNP - Pre-Biased (Dual) 100MHz 300mV 70 70 @ 5mA 5V 300mV @ 500μA, 10mA 170MHz 2.2k Ω 47k Ω
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0.00000000 26 Weeks XHP™3 Active 1 (Unlimited) ROHS3 Compliant Module Chassis Mount -40°C~150°C 1000000W Half Bridge Standard 5mA 2.75V @ 15V, 450A Trench Field Stop No 3300V 450A
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