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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Power - Max Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Gain Bandwidth Product Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Transistor Type Input Capacitance Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition
IRFR7446TRPBF IRFR7446TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 TO-252AA DRAIN Single 9.8 ns 3V 98W Tc 56A SWITCHING 40V 32 ns SILICON N-Channel 3.9m Ω @ 56A, 10V 3.9V @ 100μA 3150pF @ 25V 130nC @ 10V 13ns 20 ns 20V 56A Tc 40V 520A 6V 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2005 yes Not For New Designs 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant Lead Free Tin 100mA 3 TO-236-3, SC-59, SOT-23-3 250MHz 900μm 1.3mm Surface Mount 150°C TJ 30V DUAL GULL WING NOT SPECIFIED NOT SPECIFIED BC848 Not Qualified 330mW 1 250MHz NPN Single 330mW 30V 100mA 30V 30V SWITCHING SILICON NPN 250MHz 15nA ICBO 600mV 30V 6V 110 420 @ 2mA 5V 600mV @ 5mA, 100mA
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0.00000000 download Tube 2008 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-251-3 Short Leads, IPak, TO-251AA compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 MATTE TIN SINGLE 260 NOT SPECIFIED 3 NO R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 38W Tc SWITCHING 0.0105Ohm 30V SILICON N-Channel 10.5m Ω @ 30A, 10V 2.2V @ 250μA 1500pF @ 15V 14nC @ 10V 35A 35A Tc 30V 245A 30 mJ 4.5V 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C RoHS Compliant Lead Free 75A 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ 20V MOSFET (Metal Oxide) 90W 14mOhm D-Pak 90W Tc 75A N-Channel 9.5mOhm @ 15A, 10V 3V @ 250μA 1996pF @ 10V 19nC @ 4.5V 98ns 20V 20V 75A Tc 20V 1.996nF 10V ±20V 9.5 mΩ
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0.00000000 download Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 3 Through Hole EAR99 RoHS Compliant Lead Free 3 AVALANCHE RATED TO-251-3 Stub Leads, IPak Unknown Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 NO FET General Purpose Power Not Qualified 1 TO-251AA Single 11W 30 ns 11W Tc 800mA 6Ohm 55 ns SILICON N-Channel 6 Ω @ 500mA, 10V 3.9V @ 250μA 100pF @ 25V 5nC @ 10V 25ns 30 ns 30V 650V 650V 3 V 0.8A 800mA Tc 1.6A 20 mJ 10V ±20V
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0.00000000 Tape & Reel (TR) 2003 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant SOT-23-6 Thin, TSOT-23-6 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) Micro6™(TSOP-6) 2W Ta P-Channel 85mOhm @ 4A, 10V 1V @ 250μA 535pF @ 25V 17nC @ 10V 4A Ta 30V 4.5V 10V ±20V
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0.00000000 download Tape & Reel (TR) 2009 HEXFET® Obsolete 1 (Unlimited) DirectFET™ Isometric MX Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) 2.8W Ta 89W Tc N-Channel 2.5m Ω @ 27A, 10V 2.35V @ 100μA 4404pF @ 15V 54nC @ 4.5V 27A Ta 150A Tc 30V 4.5V 10V ±20V
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0.00000000 download Tube 2005 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 2.5W Ta N-Channel 3.8m Ω @ 20A, 10V 2.35V @ 250μA 3860pF @ 15V 45nC @ 4.5V 21A Ta 30V 4.5V 10V ±20V
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0.00000000 download 18 Weeks Tube OptiMOS™ Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 92W Tc N-Channel 125m Ω @ 7.8A, 10V 4.5V @ 390μA 1503pF @ 400V 36nC @ 10V 18A Tc 600V 10V ±20V
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0.00000000 download 12 Weeks Through Hole Tube 2006 HEXFET® Active 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Lead Free 34A No 3 TO-220-3 Full Pack No SVHC 9.8mm 4.826mm Through Hole -55°C~150°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 260 40 FET General Purpose Power 1 TO-220AB Single 46W 18 ns 5V 46W Tc 34A SWITCHING 27 ns SILICON N-Channel 16m Ω @ 20A, 10V 5V @ 250μA 4440pF @ 50V 110nC @ 10V 29ns 20 ns 30V 150V 34A Tc 10V ±30V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Obsolete 1 (Unlimited) 6 ROHS3 Compliant Lead Free AVALANCHE RATED SOT-23-6 Thin, TSOT-23-6 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED R-PDSO-G6 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE Halogen Free -30V 2W Ta 5.3A 0.045Ohm SILICON P-Channel 45m Ω @ 5.3A, 10V 2V @ 20μA 939pF @ 15V 14nC @ 10V 5.3A Ta 30V 21.2A 20 mJ 4.5V 10V ±20V
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0.00000000 18 Weeks CoolMOS™PFD7 Active 3 (168 Hours) ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) 22W Tc N-Channel 1.5 Ω @ 700mA, 10V 4.5V @ 40μA 169pF @ 400V 4.6nC @ 10V 3.6A Tc 650V 10V ±20V
IRF3706LPBF IRF3706LPBF Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C RoHS Compliant Lead Free 77A TO-262-3 Long Leads, I2Pak, TO-262AA 8.5MOhm Through Hole -55°C~175°C TJ 20V MOSFET (Metal Oxide) Single 88W 10.5mOhm TO-262 88W Tc 77A 17 ns N-Channel 8.5mOhm @ 15A, 10V 2V @ 250μA 2410pF @ 10V 35nC @ 4.5V 87ns 4.8 ns 12V 20V 77A Tc 20V 2.41nF 2.8V 10V ±12V 8.5 mΩ
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0.00000000 Obsolete 1 (Unlimited) RoHS Compliant
IRLR024NTRR IRLR024NTRR Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2000 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 45W Tc SWITCHING 0.08Ohm 55V SILICON N-Channel 65m Ω @ 10A, 10V 2V @ 250μA 480pF @ 25V 15nC @ 5V 17A 17A Tc 55V 72A 68 mJ 4V 10V ±16V
IRF9530NL IRF9530NL Infineon Technologies 0.0000
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0.00000000 Tube 1998 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant AVALANCHE RATED TO-262-3 Long Leads, I2Pak, TO-262AA unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 79W Tc SWITCHING 0.2Ohm 100V SILICON P-Channel 200m Ω @ 8.4A, 10V 4V @ 250μA 760pF @ 25V 58nC @ 10V 14A 14A Tc 100V 56A 250 mJ 10V ±20V
SPD04N60S5 SPD04N60S5 Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 2 RoHS Compliant Lead Free Tin 4.5A No 3 AVALANCHE RATED, HIGH VOLTAGE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 3 YES R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 50W 55 ns 50W Tc 4.5A SWITCHING 0.95Ohm 60 ns SILICON N-Channel 950m Ω @ 2.8A, 10V 5.5V @ 200μA 580pF @ 25V 22.9nC @ 10V 30ns 15 ns 20V 600V 4.5A Tc 9A 10V ±20V
SN7002NH6433XTMA1 SN7002NH6433XTMA1 Infineon Technologies 0.0000
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0.00000000 download 10 Weeks Surface Mount Tape & Reel (TR) 2003 SIPMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE 2.4 ns 360mW Ta 200mA 5Ohm 60V 5.3 ns SILICON N-Channel 5 Ω @ 500mA, 10V 1.8V @ 26μA 45pF @ 25V 1.5nC @ 10V 3.2ns 3.6 ns 20V 0.2A 200mA Ta 60V 4.2 pF 4.5V 10V ±20V
AUIRFR8401TRL AUIRFR8401TRL Infineon Technologies 0.0000
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0.00000000 download 26 Weeks Tape & Reel (TR) 2010 Automotive, AEC-Q101, HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED IRFR8401 YES FET General Purpose Power Single 79W Tc N-Channel 4.25m Ω @ 60A, 10V 3.9V @ 50μA 2200pF @ 25V 63nC @ 10V 100A 100A Tc 40V 10V ±20V
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 yes Active 3 (168 Hours) 2 EAR99 150°C -55°C ROHS3 Compliant 3 TO-252-3 3.949996g ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 47W 1 DRAIN N-CHANNEL Single 47W 6 ns 650mOhm 6.1A SWITCHING METAL-OXIDE SEMICONDUCTOR 27 ns 5ns 13 ns 20V 500V 500V 342pF 650 mΩ
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0.00000000 Tube 2001 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e0 Tin/Lead (Sn/Pb) SINGLE 225 30 NO R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 200W Tc SWITCHING 0.008Ohm 55V SILICON N-Channel 8m Ω @ 62A, 10V 4V @ 250μA 3247pF @ 25V 146nC @ 10V 75A 110A Tc 55V 390A 264 mJ 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2012 SIPMOS® Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant 4 TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) PG-SOT223-4 1.8W Ta 980mA P-Channel 900mOhm @ 980mA, 10V 4V @ 380μA 319pF @ 25V 12nC @ 10V 980mA Tc 100V 319pF 10V ±20V 900 mΩ
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0.00000000 download Surface Mount Tape & Reel (TR) 2008 Obsolete 1 (Unlimited) 150°C -65°C RoHS Compliant No 4 TO-243AA Surface Mount 150°C TJ BCX52 2W 2W PG-SOT89 1A 60V 500mV PNP 100nA ICBO 60V 1A 60V 100 @ 150mA 2V 500mV @ 50mA, 500mA 125MHz
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0.00000000 Obsolete 1 (Unlimited) ROHS3 Compliant
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0.00000000 download Surface Mount Tape & Reel (TR) 2011 OptiMOS™ Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant No AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 136W 8 ns 136W Tc 50A 0.0092Ohm 30V 35 ns SILICON N-Channel 6.4m Ω @ 50A, 10V 2V @ 85μA 2530pF @ 25V 68nC @ 10V 19ns 24 ns 20V 50A Tc 30V 200A 250 mJ 4.5V 10V ±20V
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0.00000000 download Tube 2005 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 32W Tc SWITCHING 0.6Ohm 600V SILICON N-Channel 600m Ω @ 4.6A, 10V 3.9V @ 250μA 790pF @ 25V 27nC @ 10V 7.3A 7.3A Tc 650V 21.9A 230 mJ 10V ±20V
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