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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IRL3715Z IRL3715Z Infineon Technologies 0.0000
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0.00000000 Tube 2003 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 45W Tc N-Channel 11m Ω @ 15A, 10V 2.55V @ 250μA 870pF @ 10V 11nC @ 4.5V 50A Tc 20V 4.5V 10V ±20V
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0.00000000 download Through Hole Tube 2012 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C RoHS Compliant 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 1 140W TO-220AB 140W Tc 62A N-Channel 13.5mOhm @ 37A, 10V 4V @ 100μA 3180pF @ 50V 87nC @ 10V 20V 62A Tc 100V 3.18nF 10V ±20V 13.5 mΩ
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0.00000000 download 20 Weeks Tape & Reel (TR) 2008 CoolMOS™ P6 Discontinued 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) D2PAK (TO-263AB) 171W Tc N-Channel 600mOhm @ 2.4A, 10V 4.5V @ 200μA 557pF @ 100V 12nC @ 10V 7.3A Tc 600V 10V ±20V
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0.00000000 download 8 Weeks Surface Mount Tape & Reel (TR) 1997 SIPMOS® yes Not For New Designs 1 (Unlimited) 4 SMD/SMT EAR99 4.5mm ROHS3 Compliant Lead Free No 3 LOGIC LEVEL COMPATIBLE TO-243AA No SVHC 1.5mm 2.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT 4 R-PDSO-F4 1 1 DRAIN Single 1W 3.7 ns 1.5V 240V 1W Ta 290mA 6Ohm 17.6 ns SILICON N-Channel 6 Ω @ 260mA, 10V 1.8V @ 108μA 97pF @ 25V 5.5nC @ 10V 3.5ns 27.3 ns 20V 240V 240V 1.5 V 0.26A 260mA Ta 4.5V 10V ±20V
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2009 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 10mm ROHS3 Compliant Lead Free TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.4mm 9.25mm Surface Mount 1.946308g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 DRAIN Single 79W 15 ns 60V 7.1mOhm 79W Tc 80A 23 ns SILICON N-Channel 4V @ 40μA 4500pF @ 25V 56nC @ 10V 3ns 5 ns 20V 80A Tc 320A 10V ±20V 7.1 mΩ
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0.00000000 download Surface Mount Tube 2012 HEXFET® Discontinued 1 (Unlimited) EAR99 6.73mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier FET General Purpose Power 1 Single 119W 8.5 ns 3V 119W Tc 138 ns 6A 30 ns N-Channel 1.3 Ω @ 3.7A, 10V 5V @ 250μA 1346pF @ 25V 34nC @ 10V 25ns 20 ns 20V 500V 6A 6A Tc 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2002 SIPMOS® yes Obsolete 1 (Unlimited) 4 EAR99 RoHS Compliant No 4 TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL GULL WING 260 40 4 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.8W 5.4 ns 1.8W Ta 1.8A 0.5Ohm 60V 27 ns SILICON N-Channel 300m Ω @ 1.8A, 10V 1.8V @ 400μA 368pF @ 25V 17nC @ 10V 9.9ns 19 ns 20V 1.8A Ta 60V 7.2A 4.5V 10V ±20V
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0.00000000 download 8 Weeks Through Hole Tube 2008 CoolMOS™ Obsolete 1 (Unlimited) 150°C -55°C 10.2mm RoHS Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.45mm 4.5mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) Halogen Free Single 156W 32 ns 650V 280mOhm PG-TO262-3-1 156W Tc 15A 70 ns N-Channel 280mOhm @ 9.4A, 10V 3.9V @ 675μA 1600pF @ 25V 63nC @ 10V 14ns 11 ns 20V 650V 3 V 15A Tc 650V 1.6nF 10V ±20V 280 mΩ
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0.00000000 download 18 Weeks Through Hole Tube 2008 CoolMOS™ C7 Active 1 (Unlimited) 150°C -55°C ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) Halogen Free 14 ns 650V 110mOhm PG-TO220-3 101W Tc 18A 71 ns N-Channel 125mOhm @ 8.9A, 10V 4V @ 440μA 1670pF @ 400V 35nC @ 10V 15ns 8 ns 20V 18A Tc 650V 1.67nF 10V ±20V 125 mΩ
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0.00000000 download 12 Weeks Through Hole Tube 2008 CoolMOS™ C6 yes Obsolete 3 (168 Hours) 3 EAR99 RoHS Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE 600V 28.4W Tc 3.2A SWITCHING SILICON N-Channel 1.4 Ω @ 1.1A, 10V 3.5V @ 90μA 200pF @ 100V 9.4nC @ 10V 3.2A Tc 8A 26 mJ 10V ±20V
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0.00000000 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin 17A 3 AVALANCHE RATED, ULTRA LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 75mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 260 30 1 DRAIN Single 38W 4.9 ns 4V 45W Tc 17A SWITCHING 19 ns SILICON N-Channel 75m Ω @ 10A, 10V 4V @ 250μA 370pF @ 25V 20nC @ 10V 34ns 27 ns 20V 55V 55V 4 V 17A Tc 68A 10V ±20V
IRFZ48VS IRFZ48VS Infineon Technologies 0.0000
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0.00000000 download Tube 2001 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) SINGLE GULL WING 225 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 150W Tc SWITCHING 0.012Ohm 60V SILICON N-Channel 12m Ω @ 43A, 10V 4V @ 250μA 1985pF @ 25V 110nC @ 10V 72A 72A Tc 60V 290A 166 mJ 10V ±20V
IPB530N15N3GATMA1 IPB530N15N3GATMA1 Infineon Technologies 0.0000
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0.00000000 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 68W 9 ns 150V 68W Tc 21A SWITCHING 0.053Ohm 13 ns SILICON N-Channel 53m Ω @ 18A, 10V 4V @ 35μA 887pF @ 75V 12nC @ 10V 3 ns 20V 21A Tc 84A 60 mJ 8V 10V ±20V
AUIRF3415 AUIRF3415 Infineon Technologies 0.0000
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0.00000000 download 8 Weeks Through Hole Tube 2011 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.66mm ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 16.51mm 4.82mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 200W 12 ns 2V 200W Tc 43A SWITCHING 0.042Ohm 71 ns SILICON N-Channel 42m Ω @ 22A, 10V 4V @ 250μA 2400pF @ 25V 200nC @ 10V 55ns 69 ns 20V 150V 2 V 43A Tc 590 mJ 10V ±20V
IRF3709STRL IRF3709STRL Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 2001 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.1W Ta 120W Tc SWITCHING 0.009Ohm 30V SILICON N-Channel 9m Ω @ 15A, 10V 3V @ 250μA 2672pF @ 16V 41nC @ 5V 75A 90A Tc 30V 360A 382 mJ 4.5V 10V ±20V
IRF6728MTR1PBF IRF6728MTR1PBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2010 HEXFET® Obsolete 1 (Unlimited) 150°C -40°C 5.45mm RoHS Compliant No 7 DirectFET™ Isometric MX No SVHC 530μm 5.05mm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) 1 75W 16 ns 1.8V 3.6mOhm DIRECTFET™ MX 2.1W Ta 75W Tc 140A 19 ns N-Channel 2.5mOhm @ 23A, 10V 2.35V @ 100μA 4110pF @ 15V 42nC @ 4.5V 34ns 19 ns 20V 30V 1.8 V 23A Ta 140A Tc 30V 4.11nF 4.5V 10V ±20V 2.5 mΩ
IPD80R600P7ATMA1 IPD80R600P7ATMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 60W Tc SWITCHING 0.6Ohm 800V SILICON N-Channel 600m Ω @ 3.4A, 10V 3.5V @ 170μA 570pF @ 500V 20nC @ 10V 8A Tc 800V 22A 20 mJ 10V ±20V
IRLZ44NSTRR IRLZ44NSTRR Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 1997 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) D2PAK 3.8W Ta 110W Tc N-Channel 22mOhm @ 25A, 10V 2V @ 250μA 1700pF @ 25V 48nC @ 5V 47A Tc 55V 4V 10V ±16V
IRLU024N IRLU024N Infineon Technologies 0.0000
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0.00000000 download Tube 2000 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) SINGLE 245 30 NO R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 45W Tc SWITCHING 0.08Ohm 55V SILICON N-Channel 65m Ω @ 10A, 10V 2V @ 250μA 480pF @ 25V 15nC @ 5V 17A 17A Tc 55V 72A 68 mJ 4V 10V ±16V
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0.00000000 download 26 Weeks Surface Mount Tape & Reel (TR) 2009 Automotive, AEC-Q101, OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 88W 24 ns -40V 88W Tc 85A 0.0073Ohm 34 ns SILICON P-Channel 7.3m Ω @ 85A, 10V 4V @ 150μA 6085pF @ 25V 89nC @ 10V 15ns 39 ns 20V 85A Tc 40V 340A 30 mJ 10V ±20V
IRL3302STRL IRL3302STRL Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 1998 HEXFET® Obsolete 1 (Unlimited) EAR99 Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 57W Tc N-Channel 20m Ω @ 23A, 7V 700mV @ 250μA 1300pF @ 15V 31nC @ 4.5V 39A Tc 20V 4.5V 7V ±10V
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0.00000000 download 8 Weeks Through Hole Tube 2005 CoolMOS™ Not For New Designs 1 (Unlimited) 150°C -55°C ROHS3 Compliant Lead Free 21A 3 TO-220-3 Through Hole -55°C~150°C TJ 560V MOSFET (Metal Oxide) 1 Halogen Free Single 208W 10 ns 500V 190mOhm PG-TO220-3-1 208W Tc 21A 67 ns N-Channel 190mOhm @ 13.1A, 10V 3.9V @ 1mA 2400pF @ 25V 95nC @ 10V 5ns 4.5 ns 20V 560V 21A Tc 500V 2.4nF 10V ±20V 190 mΩ
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0.00000000 download 12 Weeks Tape & Reel (TR) 2008 CoolMOS™ no Not For New Designs 1 (Unlimited) 2 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 278W Tc SWITCHING 0.099Ohm 600V SILICON N-Channel 99m Ω @ 18.1A, 10V 3.5V @ 1.21mA 2660pF @ 100V 119nC @ 10V 37.9A 37.9A Tc 600V 112A 796 mJ 10V ±20V
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0.00000000 download Through Hole Tube 2003 HEXFET® Obsolete 1 (Unlimited) Through Hole EAR99 10.5156mm RoHS Compliant Lead Free 28A 3 TO-220-3 No SVHC 2.54mm 8.77mm 4.69mm 42mOhm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) Single 68W 5.1 ns 4V 68W Tc 28A 5.1 ns N-Channel 42m Ω @ 17A, 10V 4V @ 250μA 680pF @ 25V 30nC @ 10V 30ns 30 ns 20V 60V 60V 4 V 28A Tc 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 10.668mm RoHS Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.699mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 110W 14 ns 110W Tc 105A SWITCHING 0.006Ohm 18 ns SILICON N-Channel 6m Ω @ 21A, 10V 2.25V @ 250μA 2840pF @ 15V 35nC @ 4.5V 38ns 5 ns 20V 30V 42A 105A Tc 420A 220 mJ 4.5V 10V ±20V
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0.00000000 download 12 Weeks Through Hole Tube 2005 HEXFET® Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 9.02mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 290W 24 ns 4V 290W Tc 51 ns 75A SWITCHING 0.0024Ohm 48 ns SILICON N-Channel 2.4m Ω @ 75A, 10V 4V @ 150μA 6320pF @ 25V 240nC @ 10V 100ns 37 ns 20V 30V 4 V 260A 75A Tc 820 mJ 10V ±20V
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0.00000000 download 20 Weeks Tube 1999 HEXFET® Discontinued 1 (Unlimited) 4 EAR99 ROHS3 Compliant AVALANCHE RATED TO-261-4, TO-261AA not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1W Ta SWITCHING 0.075Ohm 55V SILICON N-Channel 75m Ω @ 2.8A, 10V 4V @ 250μA 400pF @ 25V 18.3nC @ 10V 2.8A 2.8A Ta 55V 10V ±20V
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0.00000000 download 10 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Not For New Designs 1 (Unlimited) 9 EAR99 9.144mm ROHS3 Compliant No 11 DirectFET™ Isometric L8 No SVHC 676μm 7.112mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER BOTTOM 260 30 R-XBCC-N9 1 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.3W 44 ns 3.3W Ta 125W Tc 112 ns 20A 175°C SWITCHING 0.0035Ohm 92 ns SILICON N-Channel 3.5m Ω @ 74A, 10V 4V @ 250μA 11560pF @ 25V 300nC @ 10V 32ns 41 ns 20V 100V 2.7 V 395A 375A Tc 500A 260 mJ 10V ±20V
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0.00000000 download Surface Mount Cut Tape (CT) 2009 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 5mm RoHS Compliant Lead Free No 8 8-PowerVDFN No SVHC 810μm 6mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 3.6W 1 Single 100W 18 ns 1.8V 2.1mOhm PQFN (5x6) Single Die 29 ns 100A 22 ns N-Channel 2.1mOhm @ 50A, 10V 2.35V @ 100μA 4400pF @ 15V 76nC @ 10V 51ns 18 ns 20V 30V 1.8 V 32A Ta 100A Tc 30V 4.4nF 2.1 mΩ
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0.00000000 download 13 Weeks Through Hole Tube 2008 OptiMOS™ Active 1 (Unlimited) 175°C -55°C ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) Halogen Free 68W 6.7 ns 30V 4.6mOhm PG-TO220-3 68W Tc 50A 25 ns N-Channel 5.5mOhm @ 30A, 10V 2.2V @ 250μA 3200pF @ 15V 31nC @ 10V 5.2ns 4 ns 20V 50A Tc 30V 3.2nF 4.5V 10V ±20V 5.5 mΩ
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