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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Mounting Type Operating Temperature Voltage - Rated DC Technology Capacitance Current HTS Code Base Part Number Operating Temperature (Max) Subcategory Gain Max Power Dissipation Power - Max Voltage Number of Elements Configuration Diode Type Non-rep Pk Forward Current-Max Output Current Polarity Forward Current Forward Voltage Current Rating (Amps) Max Surge Current Element Configuration Power Dissipation Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Reverse Voltage Continuous Drain Current (ID) Capacitance @ Vr, F Max Junction Temperature (Tj) FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Gate to Source Voltage (Vgs) FET Feature Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Current - Test Transistor Type Voltage - Test Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
PTFC260202FC-V1 PTFC260202FC-V1 Cree/Wolfspeed 0.0000
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0.00000000 Tray Discontinued 1 (Unlimited) RoHS Compliant 65V H-37248-4 2.69GHz 20dB H-37248-4 170mA LDMOS (Dual) 28V 5W
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0.00000000 Tray GaN Not For New Designs 1 (Unlimited) RoHS Compliant 84V Die 6GHz 13dB 400mA HEMT 28V 60W
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0.00000000 19 Weeks Bulk 2016 Z-REC™ Active Not Applicable RoHS Compliant Module 175°C TJ 3000W 3.7mOhm Module 2 N-Channel (Half Bridge) 4.3mOhm @ 400A, 20V 4V @ 105mA 1127nC @ 20V Silicon Carbide (SiC) 444A Tc 1200V 1.2kV
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0.00000000 19 Weeks Tray 2014 Z-Rec® Active 1 (Unlimited) 150°C RoHS Compliant 28 Module Unknown Chassis Mount -40°C~150°C TJ 167W 167W 2.2V 80mOhm Module 20A 6 N-Channel (3-Phase Bridge) 98mOhm @ 20A, 20V 2.2V @ 1mA (Typ) 900pF @ 800V 61.5nC @ 20V Silicon Carbide (SiC) 29.5A Tc 1200V 1.2kV
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0.00000000 19 Weeks Screw Bulk 2014 Z-FET™ Active 1 (Unlimited) 150°C -40°C RoHS Compliant 7 Module, Screw Terminals No SVHC Chassis Mount 150°C TJ 1.66kW 1660W 2 1.66kW 2.3V 5mOhm Module 300A 2 N-Channel (Half Bridge) 5.7mOhm @ 300A, 20V 2.3V @ 15mA (Typ) 11700pF @ 600V 1025nC @ 20V 25V Silicon Carbide (SiC) 423A Tc 1200V 1.2kV
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0.00000000 6 Weeks Surface Mount Tube 2012 Z-Rec® Active 175°C -55°C RoHS Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Unknown Surface Mount 136W Silicon Carbide Schottky 24.5A 1.8V 64A Single 35μA TO-252-2 No Recovery Time > 500mA (Io) 250μA @ 1200V 3V @ 2A -55°C~175°C 1.2kV 8A 1.2kV 64A 64A 1200V 24.5A DC 0 s 560pF @ 0V 1MHz
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0.00000000 8 Weeks Tray 2017 Active 1 (Unlimited) Die
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0.00000000 6 Weeks Surface Mount Tube 2014 Z-Rec® Active 175°C -55°C 7.34mm RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Unknown 2.388mm 6.248mm Surface Mount 40.5W Silicon Carbide Schottky 5.9A 1.8V 18.8A Single 50μA TO-252-2 No Recovery Time > 500mA (Io) 50μA @ 1200V 1.8V @ 2A -55°C~175°C 1.2kV 5.9A 150μA 1.2kV 18.8A 19A 1200V 10A DC 0 s 167pF @ 0V 1MHz
PTVA092407NF-V2-R5 PTVA092407NF-V2-R5 Cree/Wolfspeed 0.0000
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0.00000000 Active 105V HBSOF-4-2 869MHz~960MHz 22.5dB 10μA PG-HBSOF-4-2 900mA LDMOS 48V 240W
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0.00000000 Z-Rec® Active 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky No Recovery Time > 500mA (Io) 50μA @ 650V 1.8V @ 8A -55°C~175°C 650V 25.5A DC 0ns 395pF @ 0V 1MHz
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 65V H-37275-6/2 2.17GHz 18dB H-37275-6/2 2.4A LDMOS 30V 60W
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0.00000000 GaN Active 125V 440206 2GHz 19.8dB 440206 1A HEMT 50V 180W
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0.00000000 16 Weeks Tube C2M™ Active Not Applicable TO-247-4 Through Hole -40°C~150°C TJ SiCFET (Silicon Carbide) TO-247-4 520W Tc N-Channel 59mOhm @ 50A, 20V 4V @ 18mA 3672pF @ 1000V 188nC @ 20V 72A Tc 1700V 20V +25V, -10V
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0.00000000 download 4 Weeks Through Hole Tube 2011 Zero Recovery™ Obsolete 1 (Unlimited) 175°C -55°C 10.41mm RoHS Compliant Lead Free 5A No 2 TO-220-2 Unknown 15.621mm 4.699mm Through Hole 1.2kV 28pF 136W Silicon Carbide Schottky 5A Standard 5A 3V 100A Single 200μA TO-220-2 No Recovery Time > 500mA (Io) 200μA @ 1200V 1.8V @ 5A -55°C~175°C 1.2kV 10A 1mA 1.2kV 100A 100A 1200V 17.5A DC 0 s 455pF @ 0V 1MHz
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0.00000000 8 Weeks Tray 2014 GaN Active 1 (Unlimited) RoHS Compliant 100V Die 18GHz 17dB 30mA HEMT 40V 6W
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0.00000000 6 Weeks Through Hole Tube 2009 Zero Recovery™ Active 1 (Unlimited) 175°C -55°C RoHS Compliant Lead Free 1A No 2 TO-220-2 Unknown Through Hole 600V 80pF CSD01060 21.4W Silicon Carbide Schottky 2.2A Standard 2A 1.8V 32A Single 100μA No Recovery Time > 500mA (Io) 100μA @ 600V 1.8V @ 1A -55°C~175°C 600V 2.2A 600V 9A 4A DC 0 s 80pF @ 0V 1MHz
E4D20120A E4D20120A Cree/Wolfspeed 17.5933
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0.00000000 13 Weeks Tube Automotive, AEC-Q101, E Active Not Applicable TO-220-2 Through Hole Silicon Carbide Schottky TO-220-2 No Recovery Time > 500mA (Io) 200μA @ 1200V 1.8V @ 20A -55°C~175°C 1200V 54.5A DC 0ns 1500pF @ 0V 1MHz
CSD08060A CSD08060A Cree/Wolfspeed 0.0000
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0.00000000 download Through Hole Tube 2008 Zero Recovery™ Obsolete 1 (Unlimited) EAR99 RoHS Compliant TO-220-2 unknown Through Hole 8541.10.00.80 175°C Rectifier Diodes 1 SINGLE Silicon Carbide Schottky 69.5A No Recovery Time > 500mA (Io) 200μA @ 600V 1.8V @ 8A -55°C~175°C 600V 12.5A 600V 0 s 470pF @ 0V 1MHz
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0.00000000 8 Weeks Tray 2015 GaN Active 1 (Unlimited) RoHS Compliant 84V 56A 440199 0Hz~2.5GHz CGH40* 19dB 2A HEMT 28V 220W
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0.00000000 download 16 Weeks Tube 2015 C3M™ Active 1 (Unlimited) 150°C RoHS Compliant 7 TO-263-8, D2Pak (7 Leads + Tab), TO-263CA No SVHC Surface Mount -55°C~150°C TJ SiCFET (Silicon Carbide) 2.1V 120mOhm D2PAK-7 83W Tc 22A N-Channel 155mOhm @ 15A, 15V 3.5V @ 3mA 350pF @ 600V 17.3nC @ 15V 22A Tc 900V 15V +18V, -8V
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0.00000000 GaN Active 84V 440162 1.8GHz~2.3GHz 15dB 440162 500mA HEMT 28V 120W
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0.00000000 8 Weeks GaN Active 1 (Unlimited) RoHS Compliant 84V 440196 3.3GHz~3.9GHz 12dB 440196 100mA HEMT 28V 15W
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0.00000000 8 Weeks Tray 2012 GaN Active 1 (Unlimited) RoHS Compliant 84V 440166 4.5GHz~6GHz 11dB 250mA HEMT 28V 30W
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0.00000000 download 6 Weeks Tube 2015 Z-Rec® Active 1 (Unlimited) RoHS Compliant TO-247-3 Through Hole Silicon Carbide Schottky TO-247-3 No Recovery Time > 500mA (Io) 250μA @ 1200V 1.8V @ 8A -55°C~175°C 1 Pair Common Cathode 1200V 24.5V DC
C3D04060E C3D04060E Cree/Wolfspeed 0.0000
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0.00000000 6 Weeks Surface Mount Tube 2009 Z-Rec® Active SMD/SMT 175°C -55°C 7.34mm RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Unknown 2.388mm 7.518mm Surface Mount 8A 75W 600V Silicon Carbide Schottky 4A 1.7V 110A Single 50μA TO-252-2 No Recovery Time > 500mA (Io) 50μA @ 600V 1.7V @ 4A -55°C~175°C 600V 4A 100μA 600V 110A 31.9A 600V 13.5A DC 0 s 251pF @ 0V 1MHz
C3M0032120D C3M0032120D Cree/Wolfspeed 29.6517
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0.00000000 C3M™ Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Through Hole -40°C~175°C TJ SiCFET (Silicon Carbide) TO-247-3 283W Tc N-Channel 43mOhm @ 40A, 15V 3.6V @ 11.5mA 3357pF @ 1000V 114nC @ 15V 63A Tc 1200V 15V +15V, -4V
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0.00000000 GaN Active 125V H-87265J-2 2.11GHz~2.2GHz 19dB H-87265J-2 320mA HEMT 48V 270W
PTNC210604MD-V1-R5 PTNC210604MD-V1-R5 Cree/Wolfspeed 0.0000
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0.00000000 Active 3 (168 Hours) 65V 14-PowerSMD Module 1.805GHz~2.2GHz 27dB 1μA PG-HB1DSO-14-1 150mA LDMOS (Dual) 28V 20W 40W
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