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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Capacitance Current HTS Code Base Part Number Pin Count JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Gain Max Power Dissipation Voltage Number of Elements Configuration Diode Type Application Number of Phases JEDEC-95 Code Non-rep Pk Forward Current-Max Output Current Polarity Forward Current Forward Voltage Case Connection Current Rating (Amps) Max Surge Current Element Configuration Turn On Delay Time Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Reverse Voltage Continuous Drain Current (ID) Capacitance @ Vr, F Max Junction Temperature (Tj) Turn-Off Delay Time FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Current - Test Transistor Type Voltage - Test Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
CGH40120P CGH40120P Cree/Wolfspeed 0.0000
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0.00000000 GaN Active 120V 440206 2.5GHz 15.5dB 440206 1A HEMT 28V 120W
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0.00000000 Tape & Reel (TR) Active 65V PG-HB2SOF-8-1 2.11GHz~2.18GHz 16dB 10μA PG-HB2SOF-8-1 750mA LDMOS 29V 54W
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
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0.00000000 12 Weeks Tape & Reel (TR) Active 3 (168 Hours) RoHS Compliant
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
CSD08060A CSD08060A Cree/Wolfspeed 0.0000
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0.00000000 download Through Hole Tube 2008 Zero Recovery™ Obsolete 1 (Unlimited) EAR99 RoHS Compliant TO-220-2 unknown Through Hole 8541.10.00.80 175°C Rectifier Diodes 1 SINGLE Silicon Carbide Schottky 69.5A No Recovery Time > 500mA (Io) 200μA @ 600V 1.8V @ 8A -55°C~175°C 600V 12.5A 600V 0 s 470pF @ 0V 1MHz
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0.00000000 download Tape & Reel (TR) Not For New Designs 1 (Unlimited) RoHS Compliant 65V H-37248-4 2.4GHz 17dB 120mA LDMOS (Dual) 30V 110W
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 65V H-37248-4 2.02GHz 16dB H-37248-4 500mA LDMOS (Dual) 28V 20W
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0.00000000 Active 105V HBSOF-4-2 869MHz~960MHz 22.5dB 10μA PG-HBSOF-4-2 900mA LDMOS 48V 240W
CGH35015F CGH35015F Cree/Wolfspeed 0.0000
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0.00000000 8 Weeks GaN Active 1 (Unlimited) RoHS Compliant 84V 440196 3.3GHz~3.9GHz 12dB 440196 100mA HEMT 28V 15W
C3D03060E C3D03060E Cree/Wolfspeed 2.0794
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0.00000000 6 Weeks Surface Mount Tube 2009 Z-Rec® Active Through Hole 175°C -55°C 7.34mm RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Unknown 2.388mm 7.518mm Surface Mount 53W Silicon Carbide Schottky 3A 1.7V 100A Single 50μA TO-252-2 No Recovery Time > 500mA (Io) 50μA @ 600V 1.7V @ 3A -55°C~175°C 600V 3A 100μA 600V 100A 100A 600V 11A DC 0 s 155pF @ 0V 1MHz
C3D02060E C3D02060E Cree/Wolfspeed 1.4909
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0.00000000 6 Weeks Surface Mount Tube 2009 Z-Rec® Active 175°C -55°C 7.34mm RoHS Compliant No 2 TO-252-3, DPak (2 Leads + Tab), SC-63 Unknown 2.388mm 7.518mm Surface Mount 39.5W Silicon Carbide Schottky 2A 1.7V 65A Single 50μA TO-252-2 No Recovery Time > 500mA (Io) 50μA @ 600V 1.7V @ 2A -55°C~175°C 600V 2A 50μA 600V 65A 21A 600V 5A DC 0 s 120pF @ 0V 1MHz
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0.00000000 6 Weeks Surface Mount Tube 2009 Z-Rec® Active SMD/SMT 175°C -55°C 7.34mm RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Unknown 2.388mm 7.518mm Surface Mount 8A 75W 600V Silicon Carbide Schottky 4A 1.7V 110A Single 50μA TO-252-2 No Recovery Time > 500mA (Io) 50μA @ 600V 1.7V @ 4A -55°C~175°C 600V 4A 100μA 600V 110A 31.9A 600V 13.5A DC 0 s 251pF @ 0V 1MHz
C3D10170H C3D10170H Cree/Wolfspeed 10.6041
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0.00000000 6 Weeks Through Hole Tube 2007 Z-Rec® Not For New Designs 1 (Unlimited) 175°C -55°C RoHS Compliant No 2 TO-247-2 Unknown 25.93mm Through Hole 231W Silicon Carbide Schottky 14.4A 2V 55A Single 60μA TO-247-2 No Recovery Time > 500mA (Io) 60μA @ 1700V 2V @ 10A -55°C~175°C 1.7kV 14.4A 20μA 1.7kV 55A 55A 1700V 14.4A DC 0ns 1.7kV 827pF @ 0V 1MHz 175°C
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0.00000000 6 Weeks Tube 2014 Z-Rec® Active RoHS Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky No Recovery Time > 500mA (Io) 50μA @ 650V 1.8V @ 8A -55°C~175°C 650V 25.5A DC 0ns 395pF @ 0V 1MHz
CSD10060A CSD10060A Cree/Wolfspeed 0.0000
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0.00000000 download Through Hole Tube 2009 Obsolete 1 (Unlimited) 2 EAR99 175°C -55°C RoHS Compliant Lead Free 10A No TO-220-2 Through Hole 600V 550pF 8541.10.00.80 3 R-PSFM-T2 Rectifier Diodes 1 Silicon Carbide Schottky EFFICIENCY 1 TO-220AC 10A Standard 16.5A 1.8V CATHODE Single No Recovery Time > 500mA (Io) 200μA @ 600V 1.8V @ 10A -55°C~175°C 600V 16.5A 200μA 600V 77A 0 s 550pF @ 0V 1MHz
PXAC241702FC-V1-R0 PXAC241702FC-V1-R0 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 3 (168 Hours) RoHS Compliant 65V H-37248-4 2.4GHz 16.5dB H-37248-4 360mA LDMOS 28V 28W
CGHV40030P CGHV40030P Cree/Wolfspeed 0.0000
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0.00000000 GaN Active 150V 440196 6GHz 16dB 440196 150mA HEMT 50V 30W
C3D06060G-TR C3D06060G-TR Cree/Wolfspeed 0.0000
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0.00000000 7 Weeks Tape & Reel (TR) 2013 Z-Rec® Active 3 (168 Hours) RoHS Compliant No TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount Silicon Carbide Schottky No Recovery Time > 500mA (Io) 50μA @ 600V 1.7V @ 6A -55°C~175°C 600V 19A DC 295pF @ 0V 1MHz
C3D20065D C3D20065D Cree/Wolfspeed 0.0000
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0.00000000 download 6 Weeks Tube 2014 Z-Rec® Active 1 (Unlimited) RoHS Compliant 3 TO-247-3 No SVHC Through Hole Silicon Carbide Schottky 55A Common Cathode No Recovery Time > 500mA (Io) 60μA @ 650V 1.8V @ 10A -55°C~175°C 650V 1 Pair Common Cathode 10A DC 0ns
C2M0040120D C2M0040120D Cree/Wolfspeed 39.8652
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0.00000000 16 Weeks Tube 2005 Z-FET™ Active 1 (Unlimited) 150°C -55°C 5.21mm RoHS Compliant 3 TO-247-3 No SVHC 21.1mm 16.13mm Through Hole 38.000013g -55°C~150°C TJ SiCFET (Silicon Carbide) 1 Single 14.8 ns 2.6V 40mOhm TO-247-3 330W Tc 60A 26.4 ns N-Channel 52mOhm @ 40A, 20V 2.8V @ 10mA 1893pF @ 1000V 115nC @ 20V 52ns 34.4 ns 25V 60A Tc 1200V 20V +25V, -10V
PTAC210802FC-V1-R250 PTAC210802FC-V1-R250 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 3 (168 Hours) RoHS Compliant
CGH27015F CGH27015F Cree/Wolfspeed 0.0000
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0.00000000 8 Weeks Tray 2015 GaN Active 1 (Unlimited) RoHS Compliant 84V 440166 3GHz 15dB 440166 100mA HEMT 28V 15W
PXAC201202FC-V2 PXAC201202FC-V2 Cree/Wolfspeed 0.0000
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0.00000000 Tray Discontinued 3 (168 Hours) RoHS Compliant 65V H-37248-4 2.2GHz 17dB H-37248-4 240mA LDMOS 28V 16W
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