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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Height Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type Manufacturer Package Identifier HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Application Number of Phases JEDEC-95 Code Non-rep Pk Forward Current-Max Polarity Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Vce(on) (Max) @ Vge, Ic IGBT Type Gate-Emitter Thr Voltage-Max Test Condition Gate Charge Td (on/off) @ 25°C Switching Energy Current - Drain (Idss) @ Vds (Vgs=0) Voltage - Cutoff (VGS off) @ Id Voltage - Breakdown (V(BR)GSS) Current Drain (Id) - Max Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) Voltage - Off State Current - On State (It (RMS)) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) Triac Type
NP90N055MUK-S18-AY NP90N055MUK-S18-AY Renesas Electronics America 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2011 Active 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-220-3 Full Pack Through Hole 175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Powers Single 1.8W Ta 176W Tc 90A N-Channel 3.8m Ω @ 45A, 10V 4V @ 250μA 7350pF @ 25V 120nC @ 10V 90A Tc 55V 10V ±20V
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0.00000000 download 16 Weeks Through Hole Tube 2011 yes Obsolete 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-3PFM, SC-93-3 Through Hole 150°C TJ Standard NOT SPECIFIED NOT SPECIFIED RJP60F 3 Insulated Gate BIP Transistors 40W 40W N-CHANNEL Single 50A 600V 1.82V 1.82V @ 15V, 25A Trench 400V, 30A, 5 Ω, 15V 46ns/70ns
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2005 Obsolete 1 (Unlimited) ROHS3 Compliant Lead Free No TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 Single 1.2W 11 ns 1.2W Ta 45W Tc 22A 25 ns N-Channel 39m Ω @ 11A, 10V 4V @ 250μA 890pF @ 25V 18nC @ 10V 6ns 6.6 ns 20V 22A Ta 55V 10V ±20V
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0.00000000 download 16 Weeks Through Hole Tube 2013 Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-220-2 Full Pack Through Hole 8541.10.00.80 SINGLE 2 R-PSFM-T2 150°C Rectifier Diodes SILICON 1 SINGLE Standard ULTRA FAST RECOVERY 1 TO-220AC 120A ISOLATED Fast Recovery =< 500ns, > 200mA (Io) 1μA @ 600V 3V @ 30A 150°C Max 600V 30A 30A DC 1μA 25ns
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0.00000000 download 16 Weeks Through Hole Tube 2012 yes Active 1 (Unlimited) ROHS3 Compliant Lead Free No 3 TO-3P-3, SC-65-3 Through Hole 150°C TJ Standard RJH60D 4 140W 140W Single 100 ns 45A 600V 600V 2.2V @ 15V, 22A Trench 300V, 22A, 5 Ω, 15V 46nC 40ns/80ns 230μJ (on), 290μJ (off)
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0.00000000 download 16 Weeks Surface Mount Tube Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-220-3 Full Pack Surface Mount 8541.10.00.80 SINGLE THROUGH-HOLE 2 R-PSFM-T2 150°C Rectifier Diodes SILICON CARBIDE 1 SINGLE Schottky GENERAL PURPOSE 1 TO-220AC 60A ISOLATED Fast Recovery =< 500ns, > 200mA (Io) 10μA @ 600V 1.8V @ 10A -55°C~150°C 600V 10A 10A DC 10μA 15ns
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0.00000000 download 16 Weeks Through Hole Tube 2005 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free Copper, Tin 7A No 3 TO-3P-3, SC-65-3 22.1mm Through Hole 150°C TJ 160V MOSFET (Metal Oxide) ENHANCEMENT MODE PRSS0004ZE-A SINGLE 4 1 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE SOURCE 100W 180 ns 100W Tc 7A SWITCHING 60 ns SILICON N-Channel 600pF @ 10V 15V 160V 7A 7A Ta ±15V
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0.00000000 download 26 Weeks Surface Mount Tape & Reel (TR) 2009 yes Obsolete 1 (Unlimited) ROHS3 Compliant No 5 SC-100, SOT-669 Surface Mount 150°C TJ MOSFET (Metal Oxide) 5 1 60W 14 ns 60W Tc 23A 34 ns N-Channel 17m Ω @ 11.5A, 10V 2550pF @ 10V 35nC @ 10V 4.2ns 6.2 ns 20V 23A Ta 100V 10V ±20V
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0.00000000 download 16 Weeks Through Hole Tube 2012 yes Active 1 (Unlimited) ROHS3 Compliant Lead Free 3 TO-3P-3, SC-65-3 Through Hole 150°C TJ Standard NOT SPECIFIED NOT SPECIFIED RJH60D 4 Insulated Gate BIP Transistors 300W 300W N-CHANNEL Single 100 ns 90A 600V 2.2V 2.2V @ 15V, 50A Trench 6V 300V, 50A, 5 Ω, 15V 130nC 60ns/190ns 1.1mJ (on), 600μJ (off)
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0.00000000 download Surface Mount Tape & Reel (TR) 2013 yes Obsolete 1 (Unlimited) ROHS3 Compliant 8-WFDFN Exposed Pad Surface Mount 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 8 50W Tc 25A N-Channel 11.1m Ω @ 12.5A, 10V 1580pF @ 10V 19.4nC @ 10V 25A Ta 60V 10V ±20V
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0.00000000 download Tape & Reel (TR) yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant TO-236-3, SC-59, SOT-23-3 compliant Surface Mount 150°C DEPLETION MODE DUAL GULL WING 260 NOT SPECIFIED 3 YES R-PDSO-G3 Other Transistors Not Qualified 150mW 1 SINGLE 0.15W AMPLIFIER JUNCTION SILICON N-Channel 9pF @ 5V 12mA @ 5V 0V @ 10μA 22V 50mA
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0.00000000 download Surface Mount Tape & Reel (TR) 2012 yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free No 3 TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C DEPLETION MODE DUAL GULL WING 260 3 Other Transistors 150mW 1 0.15W Single 50mA AMPLIFIER JUNCTION SILICON N-Channel 9pF @ 5V 0.05A 12mA @ 5V 0V @ 10μA 22V
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0.00000000 download 16 Weeks Through Hole Tube 2011 Discontinued 1 (Unlimited) 2 EAR99 150°C -55°C ROHS3 Compliant No 2 TO-220-2 Full Pack Through Hole 8541.10.00.80 3 Rectifier Diodes SILICON 1 Standard ULTRA FAST RECOVERY 1 ISOLATED Single Fast Recovery =< 500ns, > 200mA (Io) 1μA @ 600V 3V @ 20A 150°C Max 600V 20A 1μA 600V 60A 20A DC 25 ns
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0.00000000 download 16 Weeks Through Hole Tube 2005 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-3P-3, SC-65-3 Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e2 Tin/Copper (Sn/Cu) SINGLE NOT SPECIFIED NOT SPECIFIED 4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 20 ns 100W Tc 6A SWITCHING 3Ohm 900V 125 ns SILICON N-Channel 3 Ω @ 3A, 10V 980pF @ 10V 80ns 100 ns 30V 6A 6A Ta 900V 15A 10V ±30V
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0.00000000 download 16 Weeks Through Hole Tube 2008 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free Copper, Tin No 3 TO-3P-3, SC-65-3 Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 4 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 25 ns 125W Tc 4A SWITCHING 7Ohm 230 ns SILICON N-Channel 7 Ω @ 2A, 15V 1700pF @ 10V 80ns 80 ns 20V 4A 4A Ta 1500V 15V ±20V
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0.00000000 download 16 Weeks Through Hole Tube 2010 yes Active 1 (Unlimited) ROHS3 Compliant TO-3P-3, SC-65-3 Through Hole 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 4 200W Tc 30A N-Channel 210m Ω @ 15A, 10V 4750pF @ 25V 130nC @ 10V 30A Ta 600V 10V ±30V
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0.00000000 download Tape & Reel (TR) yes Obsolete 1 (Unlimited) RoHS Compliant SC-96 Surface Mount 150°C MOSFET (Metal Oxide) 3 200mW Ta P-Channel 119m Ω @ 1A, 4.5V 1.5V @ 1mA 450pF @ 10V 5.2nC @ 4.5V 2.5A Ta 30V 2.5V 4.5V ±12V
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0.00000000 download Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole -40°C~125°C TJ 4 Single TRIAC 600V 6A 1.5V 60A @ 60Hz 30mA Standard
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0.00000000 download 16 Weeks Through Hole Tube 2012 Active 1 (Unlimited) 3 EAR99 150°C -55°C ROHS3 Compliant No 3 TO-220-2 Full Pack Through Hole 8541.10.00.80 SINGLE 3 Rectifier Diodes SILICON 2 Standard 1 TO-220AB 80A ISOLATED Common Cathode Fast Recovery =< 500ns, > 200mA (Io) 2μA @ 600V 2.1V @ 30A 150°C Max 600V 60A 1μA 600V 160A 1 Pair Common Cathode 60A DC 90 ns
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