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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Mounting Type Operating Temperature Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Forward Current Forward Voltage Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Repetitive Peak Off-state Voltage Leakage Current (Max) Element Configuration Power Dissipation Turn On Delay Time Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Voltage - Off State Current - On State (It (RMS)) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) Triac Type
RJU60C2SDPD-E0#J2 RJU60C2SDPD-E0#J2 Renesas Electronics America 1.9028
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2011 Obsolete 1 (Unlimited) 2 EAR99 150°C -55°C ROHS3 Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 8541.10.00.80 SINGLE GULL WING 4 R-PSSO-G2 Rectifier Diodes SILICON 1 Standard 5A 1 5A 2V CATHODE Common Anode Fast Recovery =< 500ns, > 200mA (Io) 1μA @ 600V 2V @ 15A 150°C Max 600V 5A 1μA 600V 60A 70 ns
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0.00000000 download Surface Mount Tape & Reel (TR) 2008 Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING 3 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 32 ns 1.2W Ta 105W Tc 60A SWITCHING 64 ns SILICON N-Channel 3.8m Ω @ 30A, 10V 4V @ 250μA 7500pF @ 25V 135nC @ 10V 20ns 13 ns 20V 60A Tc 30V 240A 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free No TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 MATTE TIN SINGLE GULL WING 3 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 63 ns 1.8W Ta 288W Tc 110A SWITCHING 0.0028Ohm 55V 131 ns SILICON N-Channel 2.4m Ω @ 55A, 10V 4V @ 250μA 25700pF @ 25V 380nC @ 10V 201ns 19 ns 20V 110A Tc 55V 440A 10V ±20V
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