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IGBTs Modules
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IGBT module product filter
Common filter conditions include, manufacturer, configuration, collector maximum current, voltage, pin count, etc.
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 12 Weeks
- 14 Weeks
- 16 Weeks
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Panel, Screw
- Screw
Mounting Type
- Chassis Mount
Number of Pins
- 20
- 23
- 24
- 29
- 7
Number of Terminations
- 20
- 23
- 24
- 29
- 35
- 7
Operating Temperature
- -40°C~125°C
- -40°C~125°C TJ
- -40°C~150°C
- -40°C~150°C TJ
Package / Case
- Module
Part Status
- Active
- Not For New Designs
Pbfree Code
- no
- yes
Published
- 2001
- 2002
- 2014
Series
- C
Surface Mount
- NO
Transistor Element Material
- SILICON
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Manufacturer Package Identifier | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | Case Connection | Halogen Free | Polarity/Channel Type | Collector Current-Max (IC) | Element Configuration | Power Dissipation | Turn On Delay Time | Supplier Device Package | Input | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Max Junction Temperature (Tj) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Input Capacitance | Collector-Emitter Voltage-Max | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | NTC Thermistor | Gate-Emitter Voltage-Max | Input Capacitance (Cies) @ Vce | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Channel Type | Continuous Collector Current | Maximum Operating Temperature (°C) | Minimum Operating Temperature (°C) | Mounting | Package Height | Package Length | Package Width | PCB changed | Supplier Package | ECCN (US) | Maximum Power Dissipation (mW) | Military | Typical Collector Emitter Saturation Voltage (V) | Maximum Collector-Emitter Voltage (V) | Maximum Gate Emitter Voltage (V) | Maximum Continuous Collector Current (A) | Maximum Gate Emitter Leakage Current (uA) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IFS200V12PT4BOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2012 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | Module | Chassis Mount | 150°C TJ | Three Phase Inverter | Standard | 2.15V @ 15V, 200A | Yes | 1200V | 200A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSM200GA120DLCHOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | yes | Not For New Designs | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | UL RECOGNIZED | Module | Chassis Mount | -40°C~125°C | UPPER | UNSPECIFIED | 5 | NO | R-XUFM-X4 | 1450W | 1 | Single | ISOLATED | N-CHANNEL | Standard | POWER CONTROL | SILICON | 5mA | 190 ns | 2.6V @ 15V, 200A | 650 ns | No | 13nF @ 25V | 1200V | 370A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-GB50LP120N | Vishay Semiconductor Diodes Division | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Chassis Mount | 2015 | yes | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | INT-A-PAK (3 + 4) | Chassis Mount | -40°C~150°C TJ | Nickel (Ni) | Insulated Gate BIP Transistors | 446W | 446W | 1 | Single | Standard | 100A | 1.2kV | 1.7V | 4.29nF | 1mA | 1.7V @ 15V, 50A (Typ) | No | 20V | 4.29nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FP20R06W1E3B11BOMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Screw | 2002 | Active | Not Applicable | 23 | EAR99 | RoHS Compliant | Contains Lead | 23 | UL APPROVED | Module | Chassis Mount | -40°C~150°C | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 94W | 7 | Three Phase Inverter | ISOLATED | Not Halogen Free | N-CHANNEL | Standard | 27A | 600V | POWER CONTROL | SILICON | 1mA | 37 ns | 2V @ 15V, 20A | 250 ns | Trench Field Stop | Yes | 1.1nF @ 25V | 27A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| F423MR12W1M1B11BOMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Active | Module | Chassis Mount | -40°C~150°C TJ | 0.2W | Full Bridge | Standard | Trench | Yes | 3.68nF @ 800V | 1200V | 50A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF100R07W1H5FPB53BPSA2 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | EasyPACK™ | Active | 1 (Unlimited) | 26 | EAR99 | ROHS3 Compliant | Module | Chassis Mount | -40°C~150°C | UPPER | UNSPECIFIED | NO | R-XUFM-X26 | 20mW | 2 | 2 Independent | ISOLATED | N-CHANNEL | Standard | POWER CONTROL | SILICON | 40μA | 17 ns | 1.55V @ 15V, 25A | 40 ns | Trench Field Stop | Yes | 2.8nF @ 25V | 650V | 40A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APT60GA60JD60 | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 32 Weeks | Chassis Mount, Screw | 1999 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 4 | 38.2mm | RoHS Compliant | 4 | LOW CONDUCTION LOSS, UL RECOGNIZED | SOT-227-4, miniBLOC | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | -55°C~150°C TJ | UPPER | UNSPECIFIED | 4 | 356W | 356W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 112A | 600V | 600V | POWER CONTROL | SILICON | 8.01nF | 275μA | 2V | 82 ns | 2.5V @ 15V, 62A | 333 ns | PT | No | 8.01nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGF530U120D4G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Chassis Mount, Screw | 2012 | Obsolete | 1 (Unlimited) | 4 | EAR99 | 150°C | -40°C | RoHS Compliant | 5 | D4 | Chassis Mount | UPPER | UNSPECIFIED | 5 | R-XUFM-X4 | Insulated Gate BIP Transistors | 3.9kW | 3900W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 700A | 1.2kV | 1.2kV | MOTOR CONTROL | 37nF | 5mA | 180 ns | 3.7V @ 15V, 600A | 600 ns | NPT | No | 20V | 37nF @ 25V | 3.7 V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FF600R12ME4PBOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 26 Weeks | 2006 | Not For New Designs | 1 (Unlimited) | 7 | Non-RoHS Compliant | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NO | R-XUFM-X7 | 2 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | N-CHANNEL | 995A | POWER CONTROL | SILICON | 1200V | 310 ns | 770 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FS200R07N3E4RBOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Screw | 2002 | no | Active | Not Applicable | 35 | EAR99 | RoHS Compliant | Contains Lead | 35 | Module | 17.5mm | Chassis Mount | -40°C~150°C | FS200R07N3E4RBOSA1 | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 35 | 6 | Three Phase Inverter | Not Halogen Free | N-CHANNEL | 600W | 150 ns | Standard | 200A | 650V | 650V | 150°C | POWER CONTROL | 340 ns | SILICON | 1mA | 1.55V | 210 ns | 1.95V @ 15V, 200A | 450 ns | Trench Field Stop | Yes | 13nF @ 25V | 200A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGTQ100A65T1G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 2013 | Active | RoHS Compliant | Module | Chassis Mount | -40°C~175°C TJ | 250W | Half Bridge | Standard | 100μA | 2.2V @ 15V, 100A | Yes | 6nF @ 25V | 650V | 100A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VII50-06P1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | 2006 | yes | Obsolete | 1 (Unlimited) | 12 | RoHS Compliant | 12 | ECO-PAC2 | Chassis Mount | -40°C~150°C TJ | e4 | Gold (Au) - with Nickel (Ni) barrier | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | VII | 12 | Insulated Gate BIP Transistors | Not Qualified | 130W | 130W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Standard | 42.5A | 600V | 2.9V | MOTOR CONTROL | SILICON | 16nF | 600μA | 100 ns | 2.9V @ 15V, 50A | 310 ns | NPT | Yes | 20V | 16nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ25H120T1G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 36 Weeks | 2013 | Active | RoHS Compliant | Module | Chassis Mount | -40°C~175°C TJ | 165W | Full Bridge | SP1 | Standard | 50μA | 2.42V @ 15V, 25A | Trench Field Stop | Yes | 1.43nF @ 25V | 1200V | 50A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MG17150D-BN4MM | Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Chassis Mount | 2016 | Active | 1 (Unlimited) | ROHS3 Compliant | D-3 Module | Chassis Mount | 320.000005g | -40°C~125°C TJ | 890W | 890W | Half Bridge | Standard | 250A | 1.7kV | 2.45V | 13.6nF | 3mA | 2V | 2.45V @ 15V, 150A | Trench Field Stop | No | 13.6nF @ 25V | 1700V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG5K50HF12A | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Chassis Mount | 2014 | Obsolete | 1 (Unlimited) | RoHS Compliant | POWIR® 34 Module | Chassis Mount | -40°C~150°C TJ | 390W | 390W | Half Bridge | Standard | 100A | 1.2kV | 2.6V | 6.2nF | 1mA | 2.6V @ 15V, 50A | No | 6.2nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MIO1200-25E10 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 25 Weeks | Chassis Mount | 2011 | yes | Obsolete | 1 (Unlimited) | 9 | RoHS Compliant | E10 | Chassis Mount | -40°C~125°C TJ | UPPER | UNSPECIFIED | MIO | 9 | R-XUFM-X9 | Insulated Gate BIP Transistors | 3 | Single Switch | ISOLATED | N-CHANNEL | Standard | 1.2kA | 2.5kV | 2.5V | POWER CONTROL | SILICON | 186nF | 120mA | 615 ns | 2.5V @ 15V, 1200A | 1325 ns | NPT | No | 20V | 186nF @ 25V | 2500V | 1200A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGF90A60TG | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | 2006 | yes | Discontinued | 1 (Unlimited) | 12 | RoHS Compliant | 4 | SP4 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 12 | R-XUFM-X12 | Not Qualified | 416W | 416W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Standard | 110A | 600V | 2.5V | MOTOR CONTROL | SILICON | 4.3nF | 250μA | 51 ns | 2.5V @ 15V, 90A | 210 ns | NPT | Yes | 4.3nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GSID300A125S5C1 | SemiQ | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Active | 1 (Unlimited) | ROHS3 Compliant | Module | Chassis Mount | -40°C~150°C TJ | 2500W | 3 Phase Inverter | Module | Standard | 1mA | 2.4V @ 15V, 300A | Trench Field Stop | Yes | 30.8nF @ 25V | 1250V | 600A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGF50TL60T3G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount, Screw | 2012 | Obsolete | 1 (Unlimited) | 16 | EAR99 | RoHS Compliant | No | 32 | SP3 | Chassis Mount | -55°C~150°C TJ | UPPER | UNSPECIFIED | 25 | R-XUFM-X16 | Insulated Gate BIP Transistors | 250W | 250W | 4 | Three Level Inverter | ISOLATED | N-CHANNEL | Standard | 65A | 600V | 600V | POWER CONTROL | SILICON | 2.2nF | 250μA | 52 ns | 2.45V @ 15V, 50A | 151 ns | NPT | Yes | 20V | 2.2nF @ 25V | 2.45 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MIXA101W1200EH | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | Bulk | 2011 | Active | 1 (Unlimited) | 19 | ROHS3 Compliant | UL RECOGNIZED | E3 | Chassis Mount | -40°C~125°C TJ | UPPER | UNSPECIFIED | 19 | R-XUFM-X19 | Insulated Gate BIP Transistors | 500W | 6 | Three Phase Inverter | ISOLATED | N-CHANNEL | 500W | Standard | 155A | 1.2kV | 2.1V | POWER CONTROL | SILICON | 300μA | 1.8V | 110 ns | 2.1V @ 15V, 100A | 350 ns | PT | No | 20V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSM50GD170DLBOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | 1 (Unlimited) | 21 | EAR99 | Module | compliant | Chassis Mount | -40°C~125°C | UPPER | UNSPECIFIED | 21 | NO | R-XUFM-X21 | 480W | 6 | Full Bridge | ISOLATED | N-CHANNEL | Standard | SILICON | 100μA | 200 ns | 3.3V @ 15V, 50A | 930 ns | No | 3.5nF @ 25V | 1700V | 100A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FS200R12KT4RPBPSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | 1 (Unlimited) | 35 | EAR99 | UL RECOGNIZED | compliant | UPPER | UNSPECIFIED | NO | R-XUFM-X35 | 175°C | 6 | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | N-CHANNEL | 280A | POWER CONTROL | SILICON | 1200V | 190 ns | 600 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FD1000R33HL3KBPSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2014 | Active | Not Applicable | 9 | EAR99 | Non-RoHS Compliant | Contains Lead | Module | Chassis Mount | -40°C~150°C | UPPER | UNSPECIFIED | NO | R-XUFM-X9 | 11500W | 2 | 2 Independent | ISOLATED | Not Halogen Free | N-CHANNEL | Standard | POWER CONTROL | SILICON | 5mA | 1050 ns | 2.85V @ 15V, 1000A | 4700 ns | Trench Field Stop | No | 190nF @ 25V | 3300V | 1000A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGF25A120T1G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | 2009 | Obsolete | 1 (Unlimited) | 12 | RoHS Compliant | 1 | SP1 | unknown | Chassis Mount | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 12 | Insulated Gate BIP Transistors | Not Qualified | 208W | 208W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 40A | 1.2kV | 3.7V | MOTOR CONTROL | SILICON | 1.65nF | 250μA | 110 ns | 3.7V @ 15V, 25A | 386 ns | NPT | Yes | 20V | 1.65nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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FF900R12IP4PBOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 50 Weeks | Screw | 2002 | PrimePack™2 | Active | Not Applicable | 10 | EAR99 | RoHS Compliant | 8 | UL APPROVED | Module | Chassis Mount | -40°C~150°C | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | R-PUFM-X10 | 2 | 2 Independent | ISOLATED | N-CHANNEL | Dual | Standard | 900A | 1.2kV | POWER CONTROL | SILICON | 5mA | 370 ns | 2.05V @ 15V, 900A | 1300 ns | Trench Field Stop | Yes | 54nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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A2C35S12M3-F | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | ACTIVE (Last Updated: 8 months ago) | Active | 1 (Unlimited) | Non-RoHS Compliant | Module | Chassis Mount | -40°C~150°C TJ | A2C35S12 | 250W | Three Phase Inverter with Brake | Three Phase Bridge Rectifier | 100μA | 2.45V @ 15V, 35A | Trench Field Stop | Yes | 2154pF @ 25V | 1200V | 35A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FF600R12ME4B72BOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | Active | 1 (Unlimited) | 7 | EAR99 | ROHS3 Compliant | Module | Chassis Mount | -40°C~150°C | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NO | R-XUFM-X7 | 20mW | 2 | Half Bridge | ISOLATED | N-CHANNEL | Standard | POWER CONTROL | SILICON | 3mA | 310 ns | 2.1V @ 15V, 600A | 770 ns | Trench Field Stop | Yes | 37nF @ 25V | 1200V | 1200A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGT75A120TG | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | 2006 | Obsolete | 1 (Unlimited) | 12 | RoHS Compliant | 4 | AVALANCHE RATED | SP4 | unknown | Chassis Mount | -40°C~150°C TJ | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 12 | R-XUFM-X12 | Not Qualified | 350W | 350W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 100A | 1.2kV | 2.1V | POWER CONTROL | SILICON | 5.34nF | 250μA | 335 ns | 2.1V @ 15V, 75A | 610 ns | Trench Field Stop | Yes | 5.34nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT75DH60T3G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Obsolete | RoHS Compliant | 16 | Dual | N | 175 | -40 | Screw | 11.5 | 73.4 | 40.8 | 16 | Case SP-3 | EAR99 | 250000 | No | 1.5 | 600 | ±20 | 100 | 0.6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG5K150HF06A | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | 2014 | Obsolete | 1 (Unlimited) | RoHS Compliant | POWIR® 34 Module | Chassis Mount | -40°C~150°C TJ | 660W | 660W | Half Bridge | Standard | 270A | 600V | 2.1V | 7.3nF | 1mA | 2.1V @ 15V, 150A | No | 7.3nF @ 25V |
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IFS200V12PT4BOSA1 Infineon Technologies
IFS200V12PT4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
RFQ -
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F423MR12W1M1B11BOMA1 Infineon Technologies
F423MR12W1M1B11BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
RFQ -
DF100R07W1H5FPB53BPSA2 Infineon Technologies
DF100R07W1H5FPB53BPSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
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FS200R07N3E4RBOSA1 Infineon Technologies
FS200R07N3E4RBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
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IRG5K50HF12A Infineon Technologies
IRG5K50HF12A datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
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FS200R12KT4RPBPSA1 Infineon Technologies
FS200R12KT4RPBPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
RFQ -
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FF900R12IP4PBOSA1 Infineon Technologies
FF900R12IP4PBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
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APTGT75DH60T3G Microsemi
APTGT75DH60T3G datasheet pdf and Transistors - IGBTs - Modules product details from Microsemi stock available at Utmel
Price: 0.0000
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