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BSC028N06NSATMA1
BSC028N06NSATMA1
376-BSC028N06NSATMA1
8-PowerTDFN
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 2.8m Ω @ 50A, 10V ±20V 2700pF @ 30V 37nC @ 10V 8-PowerTDFN
In Stock : 999
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Product Details
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BSC028N06NSATMA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2700pF @ 30V.This device has a continuous drain current (ID) of [100A], which is its maximum continuous current.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 23A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 19 ns.A maximum pulsed drain current of 400A is the maximum peak drain current rated for this device.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With its 60V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (6V 10V), this device helps reduce its power consumption.
BSC028N06NSATMA1 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 400A.
BSC028N06NSATMA1 Applications
There are a lot of Infineon Technologies BSC028N06NSATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Industrial Power Supplies
- Micro Solar Inverter
- LCD/LED TV
- DC-to-DC converters
- LCD/LED/ PDP TV Lighting
- Battery Protection Circuit
- Lighting
- Synchronous Rectification
- Server power supplies
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BSC028N06NSATMA1
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