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Home Home Discrete Semiconductors Single MOSFETs Transistors BSZ036NE2LSATMA1
BSZ036NE2LSATMA1
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BSZ036NE2LSATMA1

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Manufacturer No:

BSZ036NE2LSATMA1

Manufacturer:

Infineon Technologies

HK JDW NO:

376-BSZ036NE2LSATMA1

Package:

8-PowerTDFN

Datasheet:

BSZ036NE2LSATMA1

Description:

BSZ036NE2LSATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

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In Stock : 999

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Product Details

Purchasing and Inquiry

Description


The BSZ036NE2LSATMA1 is an OptiMOSTM Power-MOSFET. Infineon establishes new benchmarks in power density and energy efficiency for discrete power MOSFETs and systems in packages with the OptiMOSTM 25V product family. For the demanding needs of voltage regulator solutions in servers, datacom, and telecom applications, OptiMOSTM 25V is the optimum option because of its extremely low gate and output charge, lowest on-state resistance, and small footprint packages, readily available in half-bridge form (power stage 5x6).



Features


  • N-channel

  • Qualified according to JEDEC1) for target applications

  • Pb-free lead plating; RoHS compliant

  • Halogen-free according to IEC61249-2-21

  • Excellent gate charge x R DS(on) product (FOM)

  • Very low on-resistance R DS(on) @ V GS=4.5 V

  • 100% avalanche tested

  • Superior thermal resistance

  • Optimized for high-performance Buck converter (Server, VGA)

  • Very Low FOMQOSS for High-Frequency SMPS

  • Low FOMSW for High-Frequency SMPS



Applications


  • DC-DC

  • VRD/VRM

  • LED

  • Motor control

  • Onboard charger

  • Mainboard

  • Notebook


1. Purchase

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EmailEmail for receiving inquiries: jindawei@hkjdwchip.com

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4. Shipping Cost

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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

Purchasing and Inquiry

Payment Method

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East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

 DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

BSZ036NE2LSATMA1

technical specifications, attributes, parameters and parts with similar specifications to BSZ036NE2LSATMA1.

  • Type
    Parameter
    Select All

  • Halogen Free

    Halogen Free

  • Input Capacitance (Ciss) (Max) @ Vds

    1200pF @ 12V

  • Current - Continuous Drain (Id) @ 25°C

    16A Ta 40A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    16nC @ 10V

  • Rise Time

    2.8ns

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    2.2 ns

  • Turn-Off Delay Time

    15 ns

  • Continuous Drain Current (ID)

    16A

  • Threshold Voltage

    2V

  • Gate to Source Voltage (Vgs)

    20V

  • Max Dual Supply Voltage

    25V

  • Avalanche Energy Rating (Eas)

    40 mJ

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Contains Lead

  • Factory Lead Time

    18 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-PowerTDFN

  • Number of Pins

    8

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2013

  • Series

    OptiMOS™

  • JESD-609 Code

    e3

  • Pbfree Code

    no

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin (Sn)

  • Additional Feature

    LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Terminal Form

    NO LEAD

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Reach Compliance Code

    not_compliant

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • Pin Count

    8

  • JESD-30 Code

    R-PDSO-N3

  • Number of Elements

    1

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • Power Dissipation-Max

    2.1W Ta 37W Tc

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    2.1W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    3.3 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    3.6m Ω @ 20A, 10V

  • Vgs(th) (Max) @ Id

    2V @ 250μA

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