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  • FDMC86261P

FDMC86261P

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Manufacturer No:

FDMC86261P

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FDMC86261P

Package:

8-PowerWDFN

Datasheet:

FDMC86261P

Description:

FDMC86261P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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FDMC86261P Description


FDMC86261P is -150V a P-Channel PowerTrench? MOSFET manufactured by onsemi. This P-Channel MOSFET FDMC86261P is produced using advanced PowerTrench? technology. This very high-density process is specially tailored to minimize on-state resistance and optimize superior switching performance. Due to the following features, the onsemi FDMC86261P can be used in industrial and portable, and wireless applications.



FDMC86261P Features


  • Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A

  • Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A

  • Very low RDS(on) mid voltage P channel silicon technology optimized for low Qg

  • This product is optimized for fast switching applications as well as load switch applications

  • 100% UIL Tested

  • RoHS Compliant



FDMC86261P Applications


  • switching applications

  • load switch applications

  • Industrial

  • Portable 

  • Wireless


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FDMC86261P

technical specifications, attributes, parameters and parts with similar specifications to FDMC86261P.

  • Type
    Parameter
    Select All
  • Number of Elements

    1

  • Case Connection

    DRAIN

  • Element Configuration

    Single

  • Power Dissipation

    2.3W

  • Turn On Delay Time

    11 ns

  • Power Dissipation-Max

    2.3W Ta 40W Tc

  • Continuous Drain Current (ID)

    2.7A

  • Transistor Application

    SWITCHING

  • Turn-Off Delay Time

    18 ns

  • Transistor Element Material

    SILICON

  • FET Type

    P-Channel

  • Rds On (Max) @ Id, Vgs

    160m Ω @ 2.4A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1360pF @ 75V

  • Gate Charge (Qg) (Max) @ Vgs

    24nC @ 10V

  • Rise Time

    10ns

  • Fall Time (Typ)

    20 ns

  • Gate to Source Voltage (Vgs)

    25V

  • Drain to Source Breakdown Voltage

    -150V

  • Drain Current-Max (Abs) (ID)

    9A

  • Current - Continuous Drain (Id) @ 25°C

    2.7A Ta 9A Tc

  • Drain to Source Voltage (Vdss)

    150V

  • Pulsed Drain Current-Max (IDM)

    20A

  • Drive Voltage (Max Rds On,Min Rds On)

    6V 10V

  • Vgs (Max)

    ±25V

  • Factory Lead Time

    12 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 21 hours ago)

  • Mount

    Surface Mount

  • Packaging

    Tape & Reel (TR)

  • Published

    2017

  • Series

    PowerTrench®

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    5

  • ECCN Code

    EAR99

  • Length

    3.3mm

  • RoHS Status

    ROHS3 Compliant

  • Contact Plating

    Gold

  • Radiation Hardening

    No

  • Number of Pins

    8

  • Package / Case

    8-PowerWDFN

  • Height

    725μm

  • Width

    3.3mm

  • Mounting Type

    Surface Mount

  • Weight

    165.33333mg

  • Operating Temperature

    -55°C~150°C TJ

  • Technology

    MOSFET (Metal Oxide)

  • Operating Mode

    ENHANCEMENT MODE

  • JESD-609 Code

    e4

  • Terminal Position

    DUAL

  • JESD-30 Code

    S-PDSO-N5

  • Number of Channels

    1

  • Subcategory

    Other Transistors

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