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  • FGA6065ADF

FGA6065ADF

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Manufacturer No:

FGA6065ADF

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FGA6065ADF

Package:

TO-3P-3, SC-65-3

Datasheet:

FGA6065ADF

Description:

FGA6065ADF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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FGA6065ADF Description


Field Stop Trench third generation IGBT, which has exceptionally low Rds(on) and substantially faster switching characteristics for exceptional efficiency, was used in this ADF IGBT series. Furthermore, this type of technology is fully tuned for a range of PFC (Power Factor Correction) topologies, including Single boost, Multi channel interleaved, etc., with switching performance of over 20KHz. Super Low Thermal Resistance for Wider SOA for System Stability is provided by TO3P package.



FGA6065ADF Features


  • Maximum Junction Temperature : TJ = 175 °C

  • Positive Temperaure Co-efficient for Easy Parallel Operating

  • High Current Capability

  • Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 60 A

  • 100% of the Parts Tested for ILM (1)

  • High Input Impedance

  • Fast Switching

  • RoHS Compliant



FGA6065ADF Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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Western Union charge US$0.00 banking fee.

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FGA6065ADF

technical specifications, attributes, parameters and parts with similar specifications to FGA6065ADF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    6 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 4 days ago)

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-3P-3, SC-65-3

  • Number of Pins

    3

  • Weight

    6.401g

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tube

  • Published

    2016

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin (Sn)

  • HTS Code

    8541.29.00.95

  • Max Power Dissipation

    306W

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • Element Configuration

    Single

  • Input Type

    Standard

  • Power - Max

    306W

  • Collector Emitter Voltage (VCEO)

    2.3V

  • Max Collector Current

    120A

  • Reverse Recovery Time

    110 ns

  • Collector Emitter Breakdown Voltage

    650V

  • Test Condition

    400V, 60A, 6 Ω, 15V

  • Vce(on) (Max) @ Vge, Ic

    2.3V @ 15V, 60A

  • IGBT Type

    Trench Field Stop

  • Gate Charge

    84nC

  • Current - Collector Pulsed (Icm)

    180A

  • Td (on/off) @ 25°C

    25.6ns/71ns

  • Switching Energy

    2.46mJ (on), 520μJ (off)

  • RoHS Status

    ROHS3 Compliant

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