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  • FGAF40N60UFTU

FGAF40N60UFTU

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Manufacturer No:

FGAF40N60UFTU

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FGAF40N60UFTU

Package:

TO-3P-3 Full Pack

Datasheet:

FGAF40N60UFTU

Description:

FGAF40N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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FGAF40N60UFTU Description

Fairchild's UF series of IGBTs provides low conduction and switching losses. The UF series is designed for applications such as general inverters and PFC where high-speed switching is a required feature.



FGAF40N60UFTU Features

High-Speed Switching

Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 20 A

High Input Impedance



FGAF40N60UFTU Applications

General Inverter, PFC



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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FGAF40N60UFTU

technical specifications, attributes, parameters and parts with similar specifications to FGAF40N60UFTU.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    8 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 4 days ago)

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-3P-3 Full Pack

  • Number of Pins

    3

  • Weight

    6.962g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Published

    2004

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin (Sn)

  • HTS Code

    8541.29.00.95

  • Subcategory

    Insulated Gate BIP Transistors

  • Voltage - Rated DC

    600V

  • Max Power Dissipation

    100W

  • Current Rating

    40A

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    100W

  • Case Connection

    ISOLATED

  • Input Type

    Standard

  • Transistor Application

    POWER CONTROL

  • Polarity/Channel Type

    N-CHANNEL

  • Collector Emitter Voltage (VCEO)

    600V

  • Max Collector Current

    40A

  • Continuous Drain Current (ID)

    40A

  • Collector Emitter Breakdown Voltage

    600V

  • Drain to Source Breakdown Voltage

    600V

  • Collector Emitter Saturation Voltage

    3V

  • Turn On Time

    67 ns

  • Test Condition

    300V, 20A, 10 Ω, 15V

  • Vce(on) (Max) @ Vge, Ic

    3V @ 15V, 20A

  • Turn Off Time-Nom (toff)

    190 ns

  • Gate Charge

    77nC

  • Current - Collector Pulsed (Icm)

    160A

  • Td (on/off) @ 25°C

    15ns/65ns

  • Switching Energy

    470μJ (on), 130μJ (off)

  • Gate-Emitter Voltage-Max

    20V

  • Gate-Emitter Thr Voltage-Max

    6.5V

  • Fall Time-Max (tf)

    250ns

  • Height

    26.5mm

  • Length

    15.5mm

  • Width

    5.5mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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